MICROWAVE TRANSISTORS AVIONICS APPLICATIONS0 1025-1150 25:1 VSWR
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MSC1550M
MICROWAVE TRANSISTORS AVIONICS APPLICATIONS0
1025-1150 25:1 VSWR CAPABILITY POUT WATTS MINIMUM GOLD METALLIZATION INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION
DESCRIPTION:
MSC1550M high power pulsed transistor specifically designed avionics applications. designed operation under short pulse width duty cycle pulse conditions capable withstanding minimum 25:1 load mismatch rated conditions. Internal impedance matching gold metallization ensure high product reliability consistency.
ABSOLUTE MAXIMUM RATINGS (Tcase
Symbol
PDISS Power Dissipation* 80°C) Device Current* Collector Base Voltage* Junction Temperature Storage Temperature
Parameter
Value
1350 +250 +150
Unit
Thermal Data
RTH(J-C) Junction-case Thermal Resistance* 0.09
*Applies only rated amplifier operation
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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MSC1550M
STATIC
ELECTRICAL SPECIFICATIONS (Tcase
Symbol
BVCBO BVEBO BVCER ICES 25mA 50mA
Test Conditions
Min.
Value Typ.
Max.
Unit
DYNAMIC
Symbol
POUT Conditions
Test Conditions
1025-1150 1025-1150 1025-1150 Pulse Width 10µS Duty Cycle
Min.
Value Typ.
Max.
Unit
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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MSC1550M
TEST CIRCUIT
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MSC1550M
TYPICAL PERFORMANCE
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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MSC1550M
PACKAGE MECHANICAL DATA
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Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
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