AO4433 uses advanced trench technology provide excellent RDS(ON), ultr
|
|
|
Top Searches for this datasheet
AO4433 P-Channel Enhancement Mode Field Effect Transistor
AO4433 uses advanced trench technology provide excellent RDS(ON), ultra-low gate charge with gate rating. This device suitable load switch applications. device protected. Standard product AO4433 Pb-free (meets ROHS Sony specifications). AO4433L Green Product ordering option. AO4433 AO4433L electrically identical.
-30V -20V) RDS(ON) (VGS -20V) RDS(ON) (VGS -10V) Rating: 1.5KV
SOIC-8 View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum -9.7
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4433
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=-10V, ID=-10A VGS=-4.5V, ID=-4A Forward Transconductance VDS=-5V, ID=-11A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-20V, ID=-11A TJ=125°C 13.8 38.5 -0.72 -2.8 Units -4.2 1760 11.5 18.5 2200
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime tD(off) Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-11A
VGS=-10V, VDS=-15V, RL=1.5, RGEN=3
IF=-11A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-11A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. Rev2: August 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4433
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V -4.5V VGS=-4V -VDS (Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) VGS=-10V Figure On-Resistance Drain Current Gate Voltage 1.0E+01 ID=-11A 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C 1.0E-05 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics 25°C 125°C VGS=-20V VGS=-20V ID=-11A VGS=-10V ID=-10A -ID(A) VDS=-5V 125°C -VGS(Volts) Figure Transfer Characteristics 25°C
Temperature (°C) Figure On-Resistance Junction Temperature
RDS(ON)
125°C
Alpha Omega Semiconductor, Ltd.
AO4433
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics VDS=-15V ID=-11A Capacitance (pF) 2500 2000 1500 1000 Coss -VDS (Volts) Figure Capacitance Characteristics Crss Ciss
100.0 100µs (Amps) 10.0 RDS(ON) limited 10ms 0.1s TJ(Max)=150°C TA=25°C -VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note Power 10µs
0.001
TJ(Max)=150°C TA=25°C
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
Other recent searches
XZMOK105S - XZMOK105S XZMOK105S Datasheet
TB389 - TB389 TB389 Datasheet
STLM20 - STLM20 STLM20 Datasheet
PS9701 - PS9701 PS9701 Datasheet
PRL1550 - PRL1550 PRL1550 Datasheet
IRPLDIM2U - IRPLDIM2U IRPLDIM2U Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
