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AF9902M

2N and 2P-Channel Enhancement Mode Power MOSFET Features

AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Features
- Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product
General Description
The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC / DC converters.
Product Summary
CH N P BVDSS (V) 30 -30 RDS(ON) (m) 40 70 ID (A) 4.3 -3.3
Pin Assignments
N1G N1D / P1D N1S / N2S N2G
Pin Descriptions
P1G P1S / P2S N2D / P2D P2G
Pin Name N1G N1D / P1D N1S / N2S N2G P2G N2D / P2D P1S / P2S P1G
X Packing
Description Gate (NMOS1) Drain(NMOS1) / Drain(PMOS1) Source(NMOS1) / Source(NMOS2) Gate (NMOS2) Gate (PMOS2) Drain(NMOS2) / Drain(PMOS2) Source(PMOS1) / Source(PMOS2) Gate (PMOS1)
Ordering information
A X Feature F :MOSFET PN 9902M X
Package S: SO-8
Blank : Tube or Bulk A : Tape & Reel
Block Diagram
P1S P1G P1N1D N1G N1S N2S P2N2D N2G P2S P2G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 22, 2005 1 / 8
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings
Thermal Data
Anachip Corp. www.anachip.com.tw 2 / 8
Rev. 1.0
Sep 22, 2005
AF9902M
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage (Note 3) Reverse Recovery Time Reverse Recovery Charge
Limits Min. Typ. 17 25 9 20
Max. 1.2 -1.2 -
Unit V ns nC
Anachip Corp. www.anachip.com.tw 3 / 8
Rev. 1.0
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (N-Channel)
Anachip Corp. www.anachip.com.tw 4 / 8
Rev. 1.0
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (N-Channel) (Continued)
Anachip Corp. www.anachip.com.tw 5 / 8
Rev. 1.0
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (P-Channel)
Anachip Corp. www.anachip.com.tw 6 / 8
Rev. 1.0
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (P-Channel) (Continued)
Anachip Corp. www.anachip.com.tw 7 / 8
Rev. 1.0
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Marking Information
SO-8L
( Top View )
Logo Part Number
Package Information
Package Type: SO-8L
DETAIL A
1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions.
Dimensions In Millimeters Min. Nom. Max. 1.35 1.55 1.75 0.10 0.18 0.25 0.33 0.41 0.51 0.19 0.22 0.25 4.80 4.90 5.00 5.80 6.15 6.50 3.80 3.90 4.00 0.38 0.71 1.27 o o o 0 4 8 1.27 TYP.
Anachip Corp. www.anachip.com.tw 8 / 8
Rev. 1.0
Sep 22, 2005