2P-Channel Enhancement Mode Power MOSFET Features Simple Drive Re

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2P-Channel Enhancement Mode Power MOSFET Features Simple Drive Re

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AF9902M
2P-Channel Enhancement Mode Power MOSFET Features
Simple Drive Requirement On-Resistance Full Bridge Application Monitor Inverter Free Plating Product
advanced power MOSFET provides designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. SO-8 package universally preferred commercial-industrial surface mount applications suited voltage applications such DC/DC converters.
Product Summary
BVDSS RDS(ON) -3.3
Assignments
N1D/P1D N1S/N2S
Descriptions
P1S/P2S N2D/P2D
Name N1D/P1D N1S/N2S N2D/P2D P1S/P2S
Packing
Description Gate (NMOS1) Drain(NMOS1) Drain(PMOS1) Source(NMOS1) Source(NMOS2) Gate (NMOS2) Gate (PMOS2) Drain(NMOS2) Drain(PMOS2) Source(PMOS1) Source(PMOS2) Gate (PMOS1)
SO-8
Ordering information
Feature :MOSFET 9902M
Package SO-8
Blank Tube Bulk Tape Reel
Block Diagram
P1N1D P2N2D
This datasheet contains product information. Anachip Corp. reserves rights modify product specification without notice. liability assumed result this product. rights under patent accompany sale product.
Rev. 2005
AF9902M
2P-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings
Symbol TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note Pulsed Drain Current (Note Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range N-Channel P-Channel -3.3 -2.6 1.38 0.01 Units
Thermal Data
Symbol Parameter Thermal Resistance Junction-Ambient (Note Max. Value Units
Electrical Characteristics unless otherwise specified)
Symbol BVDSS Parameter Drain-Source breakdown Voltage Test Conditions VGS=0V, ID=250uA VGS=0V, ID=-250uA Reference BVDSS/ Breakdown Voltage Temperature ID=1mA Coefficient Reference ID=-1mA VGS=10V, ID=5A VGS=4.5V, ID=4A VGS=2.5V, ID=2A Static Drain-Source RDS(ON) On-Resistance (Note VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-2A VDS= VGS, ID=250uA VGS(th) Gate-Threshold Voltage VDS= VGS, ID=-250uA VDS=5V, ID=4A Forward Transconductance VDS=-5V, ID=-3A VDS=30V, VGS=0V Drain-Source Leakage VDS=24V, VGS=0V IDSS Current VDS=-30V, VGS=0V VDS=-24V, VGS=0V IGSS Gate-Source Leakage Total Gate Charge (Note Gate-Source Charge Gate-Drain ("Miller") Charge VGS=±12V N-Channel VDS=24V, VGS=4.5V ID=4A P-Channel VDS=-24V, VGS=-4.5V ID=-3A Limits Min. Typ. -0.5 0.03 -0.02 Max. ±100 ±100 Unit
Anachip Corp. www.anachip.com.tw
Rev.
2005
AF9902M
2P-Channel Enhancement Mode Power MOSFET Electrical Characteristics unless otherwise specified)
Symbol td(on) td(off) Ciss Coss Crss Parameter Turn-On Delay Time (Note Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions N-Channel VDS=15V, VGS=5V ID=1A, RG=3.3, RD=15 P-Channel VDS=-15V, VGS=-5V ID=-1A, RG=3.3, RD=15 N-Channel VGS=0V, VDS=25V f=1.0MHz P-Channel VGS=0V, VDS=-25V f=1.0MHz Limits Min. Typ. Max. 1000 1100 Unit
Source-Drain Diode
Symbol Parameter Forward Voltage (Note Reverse Recovery Time Reverse Recovery Charge
Test Conditions IS=1.2A, VGS=0V IS=-1.2A, VGS=0V N-Channel IS=4A, VGS=0V dl/dt=100A/µs P-Channel IS=-3A, VGS=0V dl/dt=-100A/µs
Limits Min. Typ.
Max. -1.2
Unit
Note Surface Mounted copper board; 10sec; when mounted Min. copper pad. Note Pulse width limited Max. junction temperature Note Pulse width 300us, duty cycle
Anachip Corp. www.anachip.com.tw
Rev.
2005
AF9902M
2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (N-Channel)
Anachip Corp. www.anachip.com.tw
Rev.
2005
AF9902M
2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (N-Channel) (Continued)
Anachip Corp. www.anachip.com.tw
Rev.
2005
AF9902M
2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (P-Channel)
Anachip Corp. www.anachip.com.tw
Rev.
2005
AF9902M
2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (P-Channel) (Continued)
Anachip Corp. www.anachip.com.tw
Rev.
2005
AF9902M
2P-Channel Enhancement Mode Power MOSFET Marking Information
SO-8L
View
Logo Part Number
9902M
code: "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: =2004 Factory code
Package Information
Package Type: SO-8L
DETAIL
DETAIL
Dimensions Millimeters. Dimension Does Include Mold Protrusions.
Symbol
Dimensions Millimeters Min. Nom. Max. 1.35 1.55 1.75 0.10 0.18 0.25 0.33 0.41 0.51 0.19 0.22 0.25 4.80 4.90 5.00 5.80 6.15 6.50 3.80 3.90 4.00 0.38 0.71 1.27 1.27 TYP.
Anachip Corp. www.anachip.com.tw
Rev.
2005

2P-Channel Enhancement Mode Power MOSFET Features Simple Drive Re

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