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TOSHIBA PHOTOCOUPLER GaAlAs IRED PHOTO-IC TLP250(INV) TRANSI


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TLP250(INV)
TOSHIBA PHOTOCOUPLER GaAlAs IRED PHOTO-IC
TLP250(INV)
TRANSISTOR INVERTER INVERTERS CONDITIONER IGBT GATE DRIVE POWER GATE DRIVE
TOSHIBA TLP250(INV) consists GaAlAs light emitting diode integrated photodetector. This unit 8-lead DIP. TLP250(INV) suitable gate driving circuit IGBT power FET. Input Threshold Current Supply Current(ICC) Supply Voltage(VCC) Output Current(IO) Isolation Voltage Recognized Option(D4) Approved VDE0884/06.92 Certificate No.76823 Maximum Operating Insulation Voltage 630VPK Highest Permissible Over Voltage 4000VPK (Note):When VDE0884 approved type needed, Please designate "Option(D4)" Creepage Distance Clearance 6.4mm(MIN) 6.4mm(MIN) IF=5mA(MAX) 11mA(MAX) 10~35V ±2.0A(MAX) 2500Vrms UL1577,File No.E67349 TOSHIBA Weight: 0.54 11-10C4 Unit
Switching Time(tpLH/tpHL) 0.5µs(MAX)
TRUTH TABLE
INPUT
CONFIGURATION(TOP VIEW)
1:N.C. ANODE 3:CATHODE 4:N.C. 5:GND 6:VO(OUTPUT) 7:VO 8:VCC
SCHEMATIC
0.1µF bypass capacitor must Connected between 5(See Note
2002-06-27
TLP250(INV)
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Forward Current Forward Current Derating (Ta70) Peak Transient Forward Current Reverse Voltage Junction Temperature Peak Output Current Peak Output Current DETECTOR Output Voltage 2.5µs PW1.0µs PW2.5µs 1.0µs (Ta70°C) (Ta=85°C) (Ta70°C) (Ta=85°C) (Note IOPL IOPH (Note SYMBOL IFPT RATING -0.36 -1.5 -2.0 +1.5 +2.0 -0.73 -0.73 -20~85 -55~125 2500 UNIT
Supply Voltage Output Voltage Derating (Ta70°C) Supply Voltage Derating (Ta70°C) Junction Temperature
Vrms
Operating Frequency Operating Temperature Range Storage Temperature Range Lead Soldering Temperature(10s) Isolation Voltage (AC,1min., R.H. 60%,Ta=25°C)
(Note
Topr Tstg Tsol
(Note
(Note Pulse width PW1µs,300pps (Note Exporenential Waveform (Note Exporenential Waveform IOPH-1.0A (2.5µs) IOPL+1.0A (2.5µs) (Note Device considerd terminal device pins 1,2,3 shorted together pins 5,6,7 shorted together. (Note ceramic capacitor(0.1µF) should connected from stabilize operation high gain linear amplifier.Failure provide bypassing impair switching proparty.The total lead length between capacitor coupler should exceed 1cm.
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC Input Current, Input Voltage, Supply Voltage Peak Output Current Operating Temperature SYMBOL (ON) (OFF) IOPH IOPL Topr TYP. ±0.5 UNIT
2002-06-27
TLP250(INV)
ELECTRICAL CHARACTERISTICS -20~70°C,Unless otherwise specified)
CHARACTERISTIC Input Forward Voltage Temperature Coefficient Forward Voltage Input Reverse Current Input Capacitance Level Output Current Level IOPL SYMBOL IOPH TEST CIRCUIT TEST CONDITION 25°C 25°C MHz, 25°C (*1) V8-6 V6-5 -1.0 TYP. -2.0 -1.5 -14.2 -12.5 UNIT
Level Output Voltage Level
VCC1 VEE1 200, VCC1 VEE1 200, 25°C 25°C
12.8
Level Supply Current Level
ICCH
ICCL
Threshold Input Current Threshold Input Voltage Supply Voltage Capacitance (Input-Output) Resistance (Input-Output)
IFLH
VCC1 VEE1 200, VCC1 VEE1 200, MHz, 25°C 25°C R.H.60%
VFHL
1014
typical values Ta=25°C (*1) Duration time 50µs
2002-06-27
TLP250(INV)
SWITCHING CHARACTERISTICS
CHARACTERISTIC Propagation Delay Time Switching Time Dispersion between Output Rise Time Output Fall Time Common Mode Transient Immunity High Level Output Common Mode Transient Immunity Level Output SYMBOL tpLH tpHL |tpHL-tpLH| 1000 25°C 15000 1000 25°C 10nF
-20~70°C,Unless otherwise specified)
TEST CIRCUIT TEST CONDITION 0.05 0.05 -15000 TYP. 0.15 0.15 0.45 UNIT
Fig.1 IOPL TEST CIRCUIT
Fig.2 IOPH TEST CIRCUIT
0.1µA
0.1µA
V6-5
V8-6 IOPH
IOPL
Fig.3 TEST CIRCUIT
Fig.4 TEST CIRCUIT
0.1µA
VCC1
0.1µA
VCC1
VEE1
VEE1
2002-06-27
TLP250(INV)
Fig.5 tpLHtpHLtrtf TEST CIRCUIT
0.1µF
tpLH tpHL
Fig.6 TEST CIRCUIT
0.1µF
1000V
A(IF=8mA)
B(IF=0mA)
800(V) tf(µs) 800(V) tr(µs)
CML(CMH) maximum rate rise(fall) common mode voltage that sustained with output voltage low(high)state.
2002-06-27
TLP250(INV)
RESTRICTIONS PRODUCT
000707EBC
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. Gallium arsenide (GaAs) substance used products described this document. GaAs dust fumes toxic. break, pulverize product, chemicals dissolve them. When disposing products, follow appropriate regulations. dispose products with other industrial waste with domestic garbage. products described this document subject foreign exchange foreign trade laws. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2002-06-27

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