un.6 2005 Dual hannel nhancement Mode Field ffect Transistor

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un.6 2005 Dual hannel nhancement Mode Field ffect Transistor

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2621
un.6 2005
Dual hannel nhancement Mode Field ffect Transistor
ODUC UMMAR
-20V
(ON)
uper high dense cell design
-4.5V -2.5V View
ugged reliable. OT-26 ackage.
OLUTE MAXIMUM ATINGS A=25 unless otherwise noted)
arameter Drain-S ource Voltage Gate-S ource Voltage Drain urrent-C ontinuous ulsed Drain-S ource Diode Forward urrent Maximum ower Dissipation Operating Junction torage Temperature ange ymbol Limit -1.25 Unit
Thermal esistance, Junction-to-Ambient
2621
ICAL CHAR ACTE TICS unless otherwise noted)
Parameter CHAR ACTE TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage (th) (ON) ID(ON) CRSS
ymbol
Condition
-250uA -16V, 10V, =-250uA -4.5V, -2.0A -2.5V, -1.0A -5V, -4.5V -5V,
Unit
-0.5 -0.8 -1.5
m-ohm m-ohm
CHAR ACTE TICS
Gate Threshold Voltage Drain-S ource On-S tate esistance On-S tate Drain Current Forward Transconductance
DYNAMIC CHAR ACTE TICS
Input Capacitance Output Capacitance everse Transfer Capacitance -20V, =1.0MH
WITCHING CHAR ACTE TICS
Turn-On Delay Time Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tD(OFF)
-10V, -1A, -4.5V,
11.5 15.6 83.1 43.6
-10V, -2A, -4.5V
2621
ICAL CHAR ACTE TICS A=25 unless otherwise noted)
Parameter
Diode Forward Voltage
ymbol
Condition
=-1.25A
Unit
-0.85 -1.2
AIN-S DIODE CHAR ACTE TICS
Notes urface Mounted Board, 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle c.Guaranteed design, subject production testing.
=10V
=4.5V
Drain urrent(A)
Drain urrent
j=125
Drain-to-S ource Voltage
ate-to-S ource Voltage
igure Output haracteris tics
igure Trans haracteris tics
=-4.5V =-2.0A
(ON) On-R tance (Normalized)
apacitance
Drain-to ource Voltage
unction emperature
igure apacitance
igure On-R tance Variation with Temperature
2621
Normalized Drain-S ource reakdown oltage Normalized ate-S ource hres hold oltage
=-250uA 1.15 =-250uA 1.10 1.05 1.00 0.95 0.90 0.85
unction emperature
unction emperature
with emperature
igure reakdown oltage ariation with emperature
rans conductance
=-5V
ource-drain current
Drain-S ource urrent
Diode orward oltage
igure rans conductance ariation with Drain urrent
ource oltage
igure Diode orward oltage ariation with ource urrent
Drain urrent
=-4.5V =-2.0A
0.03
=-4.5V ingle ulse c=25
otal harge
Drain-S ource oltage
igure harge
igure Maximum perating Area
2621
toff
td(on)
td(off)
INVE
WIDTH
igure witching ircuit
igure witching Waveforms
Normalized Transient
Thermal Resistance
0.05 0.02
0.01 0.00001
0.01
Single Pulse 0.0001 0.001 0.01
(t)=r Datas heet Duty ycle, D=t1/t2
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
2621
2621
TSOP6 Tape Reel Data
TSOP6 Carrier Tape
TSOP6 Reel

un.6 2005 Dual hannel nhancement Mode Field ffect Transistor

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