diode (Silicon Epitaxial Planer) RN152G Applications High fr

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diode (Silicon Epitaxial Planer) RN152G Applications High fr

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RN152G
diode (Silicon Epitaxial Planer)
RN152G
Applications High frequency switching External dimensions (Unit
0.6±0.05 0.13±0.03
Land size figure (Unit
1.0±0.05
1.4±0.05
Features Ultra small mold type. (VMD2) High frequency resistance which small capacity.
VMD2
Construction Silicon epitaxial planar
Structure
0.27±0.03 0.5±0.05
ROHM VMD2 (year week factory)
Taping dimensions (Unit
4±0.1 2±0.05 1.5+0.1 1.75±0.1 0.18±0.05
3.5±0.05
1.11±0.05
2.1±0.1
0.76±0.1 4±0.1 2±0.05
8.0±0.3
0.65±0.05
Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage Forward current Junction temperature Storage temperature Tstg Operation temperature Topor Electrical characteristic (Ta=25°C) Parameter Symbol Forward voltage Reverse current
Limits +150 +150
Unit
Min. 0.15
Typ.
Max. 0.45
Unit
Conditions IF=10mA VR=30V VR=1V f=1MHz IF=1mA,f=100MHz IF=10mA,f=100MHz
Capacitance between terminals Forward frequency resistance
Rev.B
RN152G
Electrical characteristic curves
Ta=150 10000 Ta=150 1000 Ta=125 f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
Ta=125
Ta=75 0.01 0.001 Ta=-25 Ta=25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=75 Ta=25
Ta=-25
0.01 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
f=1MHz f=10MHz
FORWARD VOLTAGE:VF(mV)
Ta=25 VR=0V
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
FORWARD OPERATING RESISTANCE:rf()
AVE:832.7mV
Ta=25 IF=10mA n=30pcs
f=100MHz
FORWARD CURRENT:IF(mA) rf-IF CHARACTERISTICS
FREQUENCY(MHz) Ct-f CHARACTERISTICS 1000
DISPERSION
Ta=25 VR=30V n=30pcs
DISPERSION DISPERSION AVE:0.326pF Ta=25 f=1MHz VR=1V n=10pcs
FORWARD CURRENT:IF(mA) DISPERSION AVE:2.199 Ta=25 f=100MHz IF=1mA n=10pcs
REVERSE CURRENT:IR(nA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
AVE:0.0865nA
FORWARD CURRENT:IF(mA) DISPERSION AVE:0.601 Ta=25 f=100MHz IF=10mA n=10pcs
C=200pF C=100pF R=1.5k AVE:0.69kV AVE:2.00kV
ELECTROSTATIC DISCHARGE TEST ESD(KV)
FORWARD OPERATING RESISTANCE:rf()
DISPERSION
FORWARD OPERATING RESISTANCE:rf()
Rev.B
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.1

diode (Silicon Epitaxial Planer) RN152G Applications High fr

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