5500 3480 5470 0.94 0.147 Rectifier Diode 5SDD 33L5500

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5500 3480 5470 0.94 0.147 Rectifier Diode 5SDD 33L5500

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5500 3480 5470 0.94 0.147
Rectifier Diode
5SDD 33L5500
Doc. 5SYA1168-00 March
Patented free-floating silicon technology Very on-state losses Optimum power handling capability
Blocking
Maximum rated values
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage
Characteristic values
Symbol Conditions VRRM VRSM 10ms, 0.150°C 10ms, 0.150°C
Value 5000 5500
Unit
Parameter Max. (reverse) leakage current
Symbol Conditions IRRM VRRM, 150°C
Unit
Mechanical data
Maximum rated values
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions Device unclamped Device clamped
Unit
Parameter Weight Housing thickness Surface creepage distance
Symbol Conditions
26.0
1.45 26.6
Unit
strike distance Maximum rated values indicate limits beyond which damage device occur
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
5SDD 33L5500
On-state
Maximum rated values
Parameter Max. average on-state current Max. on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Symbol Conditions IF(AV)M IF(RMS) IFSM IFSM 150°C, 150°C, Half sine wave,
3480 5470
Unit
Characteristic values
Parameter On-state voltage Threshold voltage Slope resistance
Symbol Conditions V(T0) 5000 150°C 150°C 3000.8000
1.68 0.94 0.147
Unit
Switching
Characteristic values
Parameter
Symbol Conditions diF/dt A/µs, IFRM 4000 150°C
10000
Unit
Recovery charge
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1168-00 March page
5SDD 33L5500
Thermal
Maximum rated values
Parameter Operating junction temperature range
Characteristic values
Symbol Conditions
Unit Unit K/kW K/kW K/kW K/kW K/kW
Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled 63.77 Anode-side cooled 63.77 Cathode-side cooled 63.77 Double-side cooled 63.77 Single-side cooled 63.77
Thermal resistance junction Rth(j-c) case Rth(j-c)A Rth(j-c)C Thermal resistance case Rth(c-h) heatsink Rth(c-h)
Analytical function transient thermal impedance:
Zth(j-c) e-t/
i(K/kW) i(s) 4.701 0.5463 1.401 0.0746 0.611 0.0087 0.298 0.0021 Fig. Transient thermal impedance junction-tocase.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1168-00 March page
5SDD 33L5500
Max. on-state characteristic model: VF25
Max. on-state characteristic model: VF150 A150
ATvj BTvj CTvj ln(I DTvj
Valid 70000
ATvj BTvj CTvj ln(I DTvj
Valid 70000 B150
C150
D150
Fig. Isothermal on-state characteristics
Fig. Isothermal on-state characteristics
Fig. On-state power losses average on-state current.
Fig. Max. permissible case temperature average on-state current.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1168-00 March page
5SDD 33L5500
Fig. Surge on-state current number pulses. Half-sine wave, 50Hz.
Fig. Surge on-state current number pulses. Half-sine wave, 50Hz.
Fig. Recovery charge decay rate on-state current.
Fig. Peak reverse recovery current decay rate on-state current.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1168-00 March page
5SDD 33L5500
Fig. Outline drawing. dimensions millimeters represent nominal values unless stated otherwise.
Related application notes:
Doc. 5SYA 2020 5SYA 2029 5SYA 2036 Titel Design RC-Snubbers Phase Control Applications Designing Large Rectifiers with High Power Diodes Recommendations regarding mechanical clamping Press Pack High Power Semiconductors
Please refer actual versions.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Switzerland Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland Telephone Email Internet (0)58 1419 (0)58 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. 5SYA1168-00 March

5500 3480 5470 0.94 0.147 Rectifier Diode 5SDD 33L5500

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