HIGH OUTPUT POWER: HIGH LINEAR GAIN: 10.5 HIGH EFFICIENCY: INDUSTRY ST

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HIGH OUTPUT POWER: HIGH LINEAR GAIN: 10.5 HIGH EFFICIENCY: INDUSTRY ST

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BAND MEDIUM POWER GaAs MESFET NE6501077
HIGH OUTPUT POWER: HIGH LINEAR GAIN: 10.5 HIGH EFFICIENCY: INDUSTRY STANDARD PACKAGING
unless otherwise noted) SYMBOLS VDSX VGDX VGSX TSTG PARAMETERS Drain Source Voltage Gate Drain Voltage Gate Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS RATINGS +175
DESCRIPTION
NE6501077 medium power GaAs MESFET designed output stage driver high power devices. device internal matching used from frequencies GHz. chips used this series offer superior reliability consistent performance which microwave semiconductors known. NE6501077 transistors manufactured NEC's stringent quality assurance standards ensure highest reliability consistent superior performance.
OUTLINE DIMENSIONS (Units
PACKAGE OUTLINE
17.5±0.5 14.3 GATE SOURCE
RECOMMENDED OPERATING LIMITS
SYMBOLS GCOMP PARAMETERS Drain Source Voltage Channel Temperature Gain Compression Gate Resistance UNITS
6.35±0.4 R1.25, PLACES DRAIN +0.06 -0.02 8.9±0.4 BOTH LEADS
2.26 ±0.4
ELECTRICAL CHARACTERISTICS
PART NUMBER PACKAGE OUTLINE SYMBOLS CHARACTERISTICS Power Fixed Input Power Linear Gain Power Added Efficiency Drain Source Current Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance
25°C) NE6501077 UNITS °C/W -3.5 39.0 39.5 10.5 -2.0 2600 -0.5 TEST CONDITIONS 31.0 IDSQ Channel Case
Functional Characteristics
POUT
Electrical Characteristics
IDSS
California Eastern Laboratories
NE6501077 TYPICAL SCATTERING PARAMETERS 25°C)
4.05 4.05 +120° 0.05 +90° +60°
+150°
+30°
0.05
±180°
4.05
0.05
4.05
-150°
-30°
0.05
-120° -90°
-60°
MAG: DIV., 20.0 MAG: 0.02 DIV.,
10.0 1000 FREQUENCY (GHz) 0.05 0.10 0.20 0.25 0.40 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 0.984 0.974 0.970 0.973 0.971 0.969 0.968 0.976 0.968 0.962 0.952 0.953 0.954 -76.400 -115.700 -146.600 -154.100 -166.400 -170.700 176.000 167.400 159.700 151.500 143.100 134.700 125.200 18.696 12.798 7.261 5.934 3.794 3.049 1.582 1.124 0.894 0.778 0.705 0.674 0.673 140.100 120.500 103.200 98.700 90.100 86.800 72.400 60.100 47.600 35.000 21.800 8.700 -5.500 0.006 0.006 0.007 0.008 0.008 0.008 0.010 0.015 0.018 0.024 0.031 0.039 0.051 23.700 28.600 22.000 21.500 25.900 26.100 35.500 39.700 41.500 37.500 29.500 21.300 12.000 -0.320 0.036 0.212 0.251 0.488 0.593 0.979 0.874 1.088 1.081 1.100 0.940 0.761 0.812 -177.700 0.840 -178.100 0.857 179.600 0.862 178.600 0.862 176.400 0.862 175.500 0.856 169.900 0.865 165.100 0.850 158.700 0.850 151.700 0.836 144.300 0.825 137.300 0.800 130.400 MAG1 (dB) 34.936 33.290 30.159 28.703 26.760 25.811 21.992 18.747 15.156 13.368 11.639 12.376 11.204
Note: Gain Calculations:
|S21| |S12|
When undefined values used.
|S21| |S11| |S22| |S12| |S12 S21|
Maximum Available Gain Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT
MICROWAVE OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, 95054-1817 (408) 988-3500 Telex 34-6393 (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. Canada only) Internet: http://WWW.CEL.COM DATA SUBJECT CHANGE WITHOUT NOTICE 01/14/2000

HIGH OUTPUT POWER: HIGH LINEAR GAIN: 10.5 HIGH EFFICIENCY: INDUSTRY ST

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