UT3401 P-channel enhancement mode Power MOSFET, designed with high den
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UNISONIC TECHNOLOGIES CO., UT3401
UT3401 P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, on-resistance, excellent thermal electrical capabilities, operation with gate voltages. This device suitable load switch applications.
Power MOSFET
SOT-23
SYMBOL
2.Drain
*Pb-free plating product number: UT3401L
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Normal Lead Free Plating UT3401-AE3-R UT3401L-AE3-R Package SOT-23 Assignment Packing Tape Reel
UT3401L-AE3-R
(1)Packing Type (2)Package Type (3)Lead Plating
Tape Reel AE3: SOT-23 Lead Free Plating, Blank: Pb/Sn
MARKING
Lead Plating
www.unisonic.com.tw Copyright 2007 Unisonic Technologies Co.,
QW-R502-109,A
UT3401
ABSOLUTE MAXIMUM RATINGS unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS
Power MOSFET
RATINGS UNITS
=25°C -4.2 Continuous Drain Current (Note =70°C -3.5 Pulsed Drain Current (Note Power Dissipation (Note Junction Temperature +150 Storage Temperature TSTG +150 Note: Absolute maximum ratings those values beyond which device could permanently damaged. Absolute maximum ratings stress ratings only functional device operation implied.
THERMAL DATA
PARAMETER Junction-to-Ambient PARAMETER CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) SYMBOL UNIT °C/W UNIT
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
TEST CONDITIONS ID=-250µA, VGS=0V VDS=-24V, VGS=0V VDS=0V, VGS=±12V VDS=VGS, ID=-250µA VGS=-10V, ID=-4.2A VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A VDS=-5V, ID=-5A ±100 -0.7 -1.3
Forward Transconductance DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS =0V, =-15V, f=1MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VGS=-10V, VDS=-15V Turn-ON Rise Time Turn-OFF Delay Time tD(OFF) RL=3.6, 38.2 Turn-OFF Fall-Time Total Gate Charge VGS=-4.5V, VDS=-15V, ID=-4A Gate-Source Charge Gate-Drain Charge SOURCE- DRAIN DIODE RATINGS CHARACTERISTICS Drain-Source Diode Forward Voltage VDS=0V, IS=-1A -0.75 Maximum Continuous Drain-Source Diode -2.2 Forward Current Reverse Recovery Time 20.2 IF=-4A, dI/dt=100A/µs 11.2 Reverse Recovery Charge Note: value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user specific board design. current rating based thermal resistance rating. Repetitive Rating: Pulse width limited
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-109,A
UT3401
TYPICAL CHARACTERISTICS
On-Region Characteristics(Note3) 25.00 -4.5V 15.00 -2.5V 10.00 5.00 0.00 0.00 =-2V
Power MOSFET
Transfer Characteristics (Note3)
Continuous Drain Current,
20.00
Continuous Drain Current,
-10V
VDS=-5V
1.00
2.00
3.00
4.00
5.00
Drain-Source Voltage, VDSS
Gate-Source Voltage, VGSS
On-Resistance, RDS(ON)
On-Resistance Drain Current Gate Voltage(Note3)
On-Resistance Junction Temperature (Note3)
Normalized On-Resistance
0.00 2.00 4.00 6.00 8.00 10.00 -2.5V -4.5V
VGS=-
VGS=-2.5V =-1A
Drain Current
Temperature (°C)
On-Resistance Gate-Source Voltage (Note3) 1.0E+01
Body-Diode Characteristics(Note3)
On-Resistance, RDS(ON)
Gate-Source Voltage, -VGS ID=-2A
Maximum Continuous Drain-Source Diode Forward Current,
1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06
Source-Drain Voltage, -VSD
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-109,A
UT3401
TYPICAL CHARACTERISTICS(Cont.)
Gate-Charge Characteristics VDS=-15V D=-4A 1400 1200
Power MOSFET
Capacitance Characteristics
Gate-Source Voltage, -VGS
Capacitance (pF)
1000
Total Gate Charge, (nC) Drain-Source Voltage, -VDS
Maximum Forward Biased Safe Operating Area (Note 100.0
Continuous Drain Current,
TJ(Max )=150°C TA=25°C
Single Pulse Power Rating Junction-to-Ambient (Note TJ(MAX)=150°C TA=25°C
10µs 100µs
Power
RDS(ON) 10.0 limited
0.1s
10ms
0.001 0.01 1000
Drain-Source Voltage, -VDS
Pulse Width
Normalized Transient Thermal Resistance,
Normalized Maximum Transient Thermal Impedance
J,PK=T A+PDM JA=90°C/W
descending order D=0.5, 0.1, 0.05, 0.02, 0.01, single pulse
Note: static characteristics obtained using80µs pulses, duty cycle 0.5% max. measurements performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating
Single Pulse
0.01
0.00001
0.0001
0.01
1000
Pulse Width
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-109,A
UT3401
Power MOSFET
assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications products described contained herein. products designed life support appliances, devices systems where malfunction these products reasonably expected result personal injury. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice.
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-109,A
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