COLLECTOR SATURATION VOLTAGE LARGE CURRENT *High Power Dissipatio

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COLLECTOR SATURATION VOLTAGE LARGE CURRENT *High Power Dissipatio

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2SD1691 EPITAXIAL SILICON TRANSISTOR
COLLECTOR SATURATION VOLTAGE LARGE CURRENT
*High Power Dissipation: Pc=1.5W(Ta=25) *Complementary 2SB1151
TO-126C
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25)
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25 Tc=25 Pulse (Note
SYMBOL
VCBO VCEO VEBO Tstg
RATING
+150
UNIT
Junction Temperature Storage Temperature Range Note :PW10ms,Duty Cycle50%
ELECTRICAL CHARACTERISTICS(Ta=25,unless otherwise specified
CHARACTERISTIC
Collector Cut-off Current Emitter Cut-off Current Current Gain
SYMBOL
ICBO IEBO hFE1 hFE2* hFE3 VCE(sat)* VBE(sat)*
TEST CONDITIONS
VCB=50V,IE=0 VEB=7V,Ic=0 VCE=1V,Ic=0.1A VCE=1V,Ic=2A VCE=2V,Ic=5A Ic=2A,IB=0.2A Ic=2A,IB=0.2A
TYP. MAX. UNIT
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
UNISONIC TECHNOLOGIES
QW-R217-003,A
2SD1691 EPITAXIAL SILICON TRANSISTOR
CHARACTERISTIC
Switching Time Turn Time Storage Time Fall Time
SYMBOL
Tstg
TEST CONDITIONS
20sec INPUT IB1=-IB2=0.2A DUTY CYCLE1% Vcc=10V OUTPUT
TYP. MAX. UNIT
Pulse test: PW50S, Duty Cycle2% Pulse
CLASSIFICATION hFE2
RANK RANGE 160-320 200-400
ELECTRICAL CHARACTERISTICS CURVES
POWER DISSIPATION Pc(W)
DERATIN dT(%)
Tc=Ta INFINITE HEAT SINK HEAT SINK
ited
AMBIENT TEMPERATURE Ta()
CASE TEMPERATURE Tc() REVERSE BIAS SAFE OPERATING AREA
COLLECTOR CURRENT Ic(A)
SAFE OPERATING AREA COLLECTOR CURRENT Ic(A)
Ic(Pulse)MAX. Ic(DC)MAX.
VCEO (MAX.)
*SINGLE NONREPETIVE PULSE Ta=25 CURVES MUST DERATED LINEARLY WITH INCREASE INTEMPERATURE
VCEO (SUS).
COLLECTOR-EMITTER VOLTAGE
COLLECTOR-EMITTER VOLTAGE VCE(V)
UNISONIC TECHNOLOGIES
QW-R217-003,A
2SD1691 EPITAXIAL SILICON TRANSISTOR
COLLECTOR CURRENT Ic(A)
0.01 0.03
IB=80mA
IB=60m
CURRENT GAIN
VCE=2V VCE=1V
IB=40m
IB=30m
IB=20mA
IB=10mA
IB=0mA
COLLECTOR-EMITTER VOLTAGE VCE(V)
COLLECTOR CURRENT Ic(A)
STATURATION VOLTAGE VBE(sat),VCE(sat)
0.05 0.03 0.01 0.01
VBE(sat),VCE(sat) Ic/IB=10 VBE(sat)
VCE(sat)
0.03
COLLECTOR CURRENT Ic(A)
assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications products described contained herein. products designed life support appliances, devices systems where malfunction these products reasonably expected result personal injury. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice.
UNISONIC TECHNOLOGIES
QW-R217-003,A

COLLECTOR SATURATION VOLTAGE LARGE CURRENT *High Power Dissipatio

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