MEDIUM POWER TRANSISTOR 2SD1664 epitaxial planar type silicon tra

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MEDIUM POWER TRANSISTOR 2SD1664 epitaxial planar type silicon tra

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2SD1664
MEDIUM POWER TRANSISTOR
2SD1664 epitaxial planar type silicon transistor.
FEATURES
*Low VCE(sat): (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement 2SB1132.
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS Ta=25°C
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current PULSE (Note1) Collector Power Dissipation
SYMBOL
VCBO VCEO VEBO
RATING
(Note2) +150
UNIT
Junction Temperature Storage Temperature TSTG Note1: Duty=1/2,Pw=20ms Note2: When mounted 40*40*0.7 ceramic board.
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance
SYMBOL
BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)
TEST CONDITIONS
IE=50A VCB=20V VEB= VCE= 3V,Ic= 100mA Ic/IB=500mA /50mA VCE=5V, mA,f=100MHz VCB= 10V, A,f=1MHz
UNIT
0.15
CLASSIFICATION
RANK RANGE 82-180 120-270 180-390
UNISONIC TECHNOLOGIES
QW-R208-025,A
2SD1664
Collector Current: Ic(mA)
Figure 2.Grounded Emitter OutputCharacteristics 2.5mA 3.0mA 3.5mA 4.0mA 2.0mA 1.5mA
ELECTRICAL CHARACTERISTICS CURVES
Figure 1.Grounded Emitter PropagationCharacteristics a=100 a=25 a=55 Collector Current: Ic(mA) Base toEmitter Voltage:V BE(V) Figure 3.DC Current Gain vs.Collector Current 2000 1000 Current Gain:hFE Current Gain:hFE a=25 2000 1000 1.0mA 0.5mA a=25 =0mA
Collector toEmitter Voltage:V Figure 4.DC Current Gain vs.Collector Current (II)
a=100 a=25
1000 Collector Current :Ic(mA)
5001000 Collector Current :Ic(mA) Collector Saturation Voltage:V CE(sat)
Collector Saturation Voltage:V CE(sat)
Figure5.Collector-emitter Saturation Voltage vs.Collector Current a=25
Figure6.Collector-emitter Saturation Voltage vs.Collector Current (II) IB=10
0.05 0.02 0.01 100200 5001000 Collector Current :Ic(mA)
0.05 a=100 a=-40 0.02 0.01 100200 5001000 Collector Current :Ic(mA) a=25
UNISONIC TECHNOLOGIES
QW-R208-025,A
2SD1664
Figure Collector Output Capacitance vs.Collector-base Voltage Ta=25 f=1MHz IB=0A
Figure 7.Gain Bandwidth Product Emitter Current Collector Output Capacitance:Cob (pF) Ta=25 Transition Frequency:fT(MHz)
-100 Emitter Current :IB(mA)
Collector Base Voltage:VCB(V)
Figure 9.Safe Operation Area Transient Thermal Resistance:Rth (/W) Collector Current:Ic 0.05 Ta=25 0.02 *Single pulse 0.01 Collector Emitter Voltage:VCE(V)
Figure .Transient Thermal Resistance 1000 Ta=25
assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications products described contained herein. products designed life support appliances, devices systems where malfunction these products reasonably expected result personal injury. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice.
0.001 0.01
Time:t(s)
1000
UNISONIC TECHNOLOGIES
QW-R208-025,A

MEDIUM POWER TRANSISTOR 2SD1664 epitaxial planar type silicon tra

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