Amps, Volts N-CHANNEL MOSFET 2N60 high voltage MOSFET designed ha

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Amps, Volts N-CHANNEL MOSFET 2N60 high voltage MOSFET designed ha

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UNISONIC TECHNOLOGIES CO., 2N60
Amps, Volts N-CHANNEL MOSFET
2N60 high voltage MOSFET designed have better characteristics, such fast switching time, gate charge, on-state resistance have high rugged avalanche characteristics. This power MOSFET usually used high speed switching applications power supplies, motor controls, high efficient converters bridge circuits.
Power MOSFET
TO-252
TO-220
FEATURES
RDS(ON) 3.8@VGS 10V. Ultra gate charge (typical 9.0nC) reverse transfer capacitance (Crss typical Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness
TO-220F
*Pb-free plating product number: 2N60L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number Package Normal Lead Free Plating 2N60-TA3-T 2N60L-TA3-T TO-220 2N60-TF3-T 2N60L-TF3-T TO-220F 2N60-TM3-T 2N60L-TM3-T TO-251 2N60-TN3-R 2N60L-TN3-R TO-252 2N60-TN3-T 2N60L-TN3-T TO-252 Note: Assignment: Gate Drain Source Assignment Packing Tube Tube Tube Tape Reel Tube
2N60L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating
Tube, Tape Reel TA3: TO-220, TF3: TO-220F, TM3: TO-251, TO-252 Lead Free Plating Blank: Pb/Sn
www.unisonic.com.tw Copyright 2005 Unisonic Technologies Co.,
QW-R502-053,E
2N60
ABSOLUTE MAXIMUM RATINGS unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note SYMBOL VDSS VGSS
Power MOSFET
RATINGS UNIT 25°C Drain Current Continuous 100°C 1.26 Drain Current Pulsed (Note Repetitive(Note Avalanche Energy Single Pulse(Note Peak Diode Recovery dv/dt (Note dv/dt V/ns 25°C Total Power Dissipation Derate above 25°C 0.36 Junction Temperature +150 Storage Temperature TSTG +150 Note:1. Absolute maximum ratings those values beyond which device could permanently damaged. Absolute maximum ratings stress ratings only functional device operation implied. Repetitive Rating: Pulse width limited maximum junction temperature L=64mH, IAS=2.0A, VDD=50V, RG=25 Starting 25°C 2.4A, di/dt 200A/µs, BVDSS, Starting 25°C
THERMAL DATA
PARAMETER Thermal Resistance Junction-Ambient PACKAGE TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F SYMBOL RATINGS UNIT
Thermal Resistance Junction-Case
ELECTRICAL CHARACTERISTICS =25, unless Otherwise specified.)
PARAMETER Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Forward Reverse Breakdown Voltage Temperature Coefficient Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-Body Leakage Current SYMBOL BVDSS IDSS IGSS TEST CONDITIONS 250µA 600V, 480V, 125°C 30V, -30V, -100 2.25 UNIT
BVDSS/ VGS(TH) VGS, 250µA RDS(ON) 10V, 50V, (Note CISS COSS CRSS
=25V, =0V, =1MHz
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-053,E
2N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS Switching Characteristics Turn-On Delay Time (ON) Rise Time =300V, =2.4A, RG=25 Turn-Off Delay Time tD(OFF) (Note 1,2) Fall Time Total Gate Charge VDS=480V, VGS=10V, ID=2.4A Gate-Source Charge (Note Gate-Drain Charge Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage Continuous Drain-Source Current Pulsed Drain-Source Current 2.4A, Reverse Recovery Time di/dt A/µs (Note1) Reverse Recovery Charge Note: Pulse Test: Pulse Width 300µs, Duty Cycle2% Essentially Independent Operating Temperature
Power MOSFET
UNIT
0.72
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-053,E
2N60
TEST CIRCUITS WAVEFORMS
Power MOSFET
D.U.T.
Driver Same Type D.U.T. dv/dt controlled controlled pulse period D.U.T.-Device Under Test
Fig. Peak Diode Recovery dv/dt Test Circuit
(Driver)
P.W.
Period
Period
VGS=
Body Diode Forward Current (D.U.T.) Body Diode Reverse Current di/dt
Body Diode Recovery (D.U.T.)
Body Diode
Forward Voltage Drop
Fig. Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-053,E
2N60
TEST CIRCUITS WAVEFORMS (Cont.)
Power MOSFET
Pulse Width Duty Factor 0.1%
D.U.T.
D(ON (OFF)
Fig. Switching Test Circuit
Fig. Switching Waveforms
0.2F 0.3F
Same Type D.U.T.
Charge
Fig. Gate Charge Test Circuit
Fig. Gate Charge Waveform
BVDSS
D.U.T.
Time
Fig. Unclamped Inductive Switching Test Circuit
Fig. Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-053,E
2N60
TYPICAL CHARACTERISTICS
On-Region Characteristics
Top: 15.0V Bottorm 5.5V
Power MOSFET
Transfer Characteristics VDS=50V 250s Pulse Test
Drain Current,
Drain Current,
250s Pulse Test TC=25
10-1
Drain-Source Voltage,
Gate-Source Voltage,
On-Resistance Variation Drain Current Gate Voltage
Body Diode Forward Voltage Variationvs. Source Current Temperature VGS=0V 250s Pulse Test
Drain-Source On-Resistance, DS(ON)
TJ=25 VGS=20V
Reverse Drain Current,
VGS=10V
10-1
Drain Current,
Source-Drain Voltage,
Capacitance Drain-Source Voltage Capacitance (pF) Ciss Coss Crss VGS=0V 1MHz
Gate Charge Gate Charge Voltage VDS=120V Gate-Source Voltage, ID=2.4A VDS=300V VDS=480V
Ciss=CGS+CGD (CDS=shorted) Coss=CDS+CGD Crss=CGD
Drain-Source Voltage,
Total Gate Charge, (nC)
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-053,E
2N60
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Temperature
Power MOSFET
-Resistance Temperature =10V ID=4.05A -100
Drain-Source Breakdown Voltage, VDSS (Normalized)
-100
Drain-Source On-Resistance, DS(ON) (Normalized)
VGS=10V ID=250A
Junction Temperature,
Junction Temperature,
Max. Safe Operating Area Operation This Area Limited RDS(on) Drain Current, Drain Current, 100s TC=25 TJ=125 Single Pulse
Max. Drain Current Case Temperature
Case Temperature,
Drain-Source Voltage,
Thermal Response
Thermal Response,
D=0.5 0.05
2.78/W Max. Duty Factor, D=t1/t2
0.02 0.01 Single pulse 10-2 10-1
10-5
10-4
10-3
Square Wave Pulse Duration
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-053,E
2N60
Power MOSFET
assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications products described contained herein. products designed life support appliances, devices systems where malfunction these products reasonably expected result personal injury. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice.
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-053,E

Amps, Volts N-CHANNEL MOSFET 2N60 high voltage MOSFET designed ha

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