DESCRIPTION SPN4412 N-Channel logic enhancement mode power field effec

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DESCRIPTION SPN4412 N-Channel logic enhancement mode power field effec

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SPN4412
DESCRIPTION SPN4412 N-Channel logic enhancement mode power field effect transistors produced using high cell density DMOS trench technology. This high density process especially tailored minimize on-state resistance. These devices particularly suited voltage application notebook computer power management other battery powered circuits where high-side switching FEATURES 30V/6.8A,RDS(ON)= 28m@VGS= 30V/5.6A,RDS(ON)= 36m@VGS= 4.5V Super high density cell design extremely (ON) Exceptional on-resistance maximum current capability package design APPLICATIONS Power Management Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch Display inverter
CONFIGURATION(SOP
PART MARKING
2007/ Ver.2
Page
SPN4412
DESCRIPTION
ORDERING INFORMATION Part Number SPN4412S8RG SPN4412S8TG SPN4412S8RG Tape Reel Free SPN4412S8TG Tube Free ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted) Parameter Drain-Source Voltage Gate -Source Voltage Continuous Drain Current(TJ=150) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction Ambient
Symbol
Description Source Source Source Gate Drain Drain Drain Drain
Package SOP- SOP-
Part
Marking
SPN4412 SPN4412
Symbol VDSS VGSS TA=25 TA=70 TA=25 TA=70 TSTG
Typical
Unit
-55/150 -55/150
2007/ Ver.2
Page
SPN4412
ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time
Symbol
Conditions
Min.
Max.
Unit
V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS ID(on) RDS(on) Ciss Coss Crss td(on) td(off) VDD=15V,RL=15 ID1.0A,VGEN=10V RG=6 VDS=15VGS=0V f=1MHz VDS=0V,VGS=±20V VDS=24V,VGS=0V VDS=24V,VGS=0V TJ=85 VDS5V,VGS =10V VGS= 10V,ID=6.8A VGS=4.5V,ID=5.6A VDS=15V,ID=6.2A IS=2.3A,VGS
±100 0.022 0.030 0.028 0.036
VDS=15V,VGS=10V
2007/ Ver.2
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SPN4412
TYPICAL CHARACTERISTICS
2007/ Ver.2
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SPN4412
TYPICAL CHARACTERISTICS
2007/ Ver.2
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SPN4412
TYPICAL CHARACTERISTICS
2007/ Ver.2
Page
SPN4412
SOP- PACKAGE OUTLINE
2007/ Ver.2
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SPN4412
Information provided alleged exact consistent. SYNC Power Corporation presumes responsibility penalties such information violation patents other rights third parties which result from use. license granted allegation otherwise under patent patent rights SYNC Power Corporation. Conditions mentioned this publication subject change without notice. This publication surpasses replaces information previously supplied. SYNC Power Corporation products authorized critical components life support devices systems without express written approval SYNC Power Corporation. ©The SYNC Power logo registered trademark SYNC Power Corporation ©2004 SYNC Power Corporation Printed Taiwan Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com
2007/ Ver.2
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DESCRIPTION SPN4412 N-Channel logic enhancement mode power field effec

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