N-CHANNEL 600V 0.38 TO-220 /I2SPAK/TO-247 Zener Protecdet SuperMESHMOS
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STP16NK60Z STB16NK60Z-S STW16NK60Z
N-CHANNEL 600V 0.38 TO-220 /I2SPAK/TO-247 Zener Protecdet SuperMESHMOSFET
Table General Features
TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z
Figure Package
VDSS
RDS(on) 0.42 0.42 0.42
TYPICAL RDS(on) 0.38 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
TO-220
I2SPAK
DESCRIPTION SuperMESHseries obtained through extreme optimization ST's well established strip-based PowerMESHlayout. addition pushing on-resistance significantly down, special care taken ensure very good dv/dt capability most demanding applications. Such series complements full range high voltage MOSFETs including revolutionary MDmeshproducts.
TO-247
Figure Internal Schematic Diagram
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL OFF-LINE POWER SUPPLIES
Table Order Codes
SALES TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z MARKING P16NK60Z B16NK60Z W16NK60Z PACKAGE TO-220 I2SPAK TO-247 PACKAGING TUBE TUBE TUBE
Rev. September 2005
This preliminary information product foreseen developed. Details subject change without notice.
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STP16NK65Z STB16NK65Z-S STW16NK60Z
Table Absolute Maximum ratings
Symbol VDGR PTOT VESD(G-S) Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Gate source (HBM-C= 100pF, 1.5K)
Pulse width limited safe operating area di/dt A/µs, V(BR)DSS, TJMAX.
Value 1.51 6000
Unit W/°C
Table Thermal Data
TO-220/ Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 62.5 0.66 TO-247
Table Avalanche Characteristics
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± (Open Drain) Min. Value Unit
Table GATE-SOURCE ZENER DIODE
Symbol BVGSO Typ. Max. Unit
PROTECTION FEATURES GATE-TO-SOURCE ZENER DIODES built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied from gate source. this respect Zener voltage appropriate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components.
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STP16NK60Z STB16NK60Z-S STW16NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table On/Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) V(BR)DSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Drain-source Breakdown Voltage Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Rating Rating, VGS, 10V, 3.75 0.38 Min. 0.42 Typ. Max. Unit
Table Dynamic
Symbol Ciss Coss Crss Coss td(on) td(off) Test Conditions 25V, MHz, Min. Typ. 2650 Max. Unit
480V (Resistive Load see, Figure 480V,
Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS
Table Source Drain Diode
Symbol ISDM IRRM IRRM ISDM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Source-drain Current Source-drain Current (pulsed) di/dt A/µs 25°C (see test circuit, Figure di/dt A/µs 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
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STP16NK65Z STB16NK65Z-S STW16NK60Z
Figure Unclamped Inductive Load Test Circuit Figure Unclamped Inductive Wafeform
Figure Switching Times Test Circuit Resistive Load
Figure Gate Charge Test Circuit
Figure Test Circuit Inductive Load Switching Diode Recovery Times
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STP16NK60Z STB16NK60Z-S STW16NK60Z
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
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STP16NK65Z STB16NK65Z-S STW16NK60Z
TO-247 MECHANICAL DATA
MIN. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM.
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STP16NK60Z STB16NK60Z-S STW16NK60Z
TO-220 MECHANICAL DATA
DIM. MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
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STP16NK65Z STB16NK65Z-S STW16NK60Z
I2SPAK MECHANICAL DATA
MIN. 4.40 2.49 0.70 1.14 0.45 1.23 8.95 10.00 4.88 16.7 1.27 13.82 MAX. 4.60 2.69 0.93 1.70 0.60 1.36 9.35 10.40 5.28 17.5 14.42 MIN. 0.173 0.098 0.027 0.045 0.018 0.048 0.352 0.394 0.192 0.657 0.05 0.544 inch TYP. MAX. 0.181 0.106 0.037 0.067 0.024 0.053 0.368 0.409 0.208 0.689 0.055 0.568
DIM.
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STP16NK60Z STB16NK60Z-S STW16NK60Z
Table Revision History
Date 06-Jul-2004 06-Sep-2005 Revision Description Changes First Release. Inserted Ecopak indication
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