N-channel 250V 0.084 TO-254AA Rad-hard gate charge STripFETPower MOSFE
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STRH40N25FSY3
N-channel 250V 0.084 TO-254AA Rad-hard gate charge STripFETPower MOSFET
Type STRH40N25FSY3
VDSS 250V
RDS(on) Fast switching Single event effect (SEE) hardened total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy 100kRad SEGR with ions
TO-254AA
Internal schematic diagram
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process specifically been designed improve immunity space effect. therefore suitable power switch mainly high-efficiency DC-DC converters Motor Control applications. also intended application with gate charge drive requirements.
Applications
Satellite High reliability applications
Order codes
Part number STRH40N25FSY1 STRH40N25FSY3
temp range Space flights parts (full flow screening)
Marking RH40N25FSY1 RH40N25FSY3
Package TO-254AA TO-254AA
Packaging Individual strip pack Individual strip pack
March 2007
1/13
www.st.com
This preliminary information product development undergoing evaluation. Details subject change without notice.
Contents
STRH40N25FSY3
Contents
Electrical ratings Electrical characteristics
Pre-irradiation Post-irradiation
Test circuit
Package mechanical data Revision history
2/13
STRH40N25FSY3
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings (pre-irradiation)
Parameter Drain-source voltage (VGS Gate-source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value Unit V/ns
PTOT
dv/dt Tstg
Rated according Rthj-case Pulse width limited safe operating area 40A, di/dt 400A/µs, V(BR)DSS
Table
Symbol
Thermal data
Parameter Value 0.45 0.21 Unit °C/W °C/W °C/W
Rthj-case Thermal resistance junction-case Rthc-s Case-to-sink
Rthj-amb Thermal resistance junction -amb
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive not-repetitive (pulse width limited Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Repetitive avalanche Value Unit
3/13
Electrical characteristics
STRH40N25FSY3
Electrical characteristics
(TCASE 25°C unless otherwise specified)
Pre-irradiation
Table
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS Gate body leakage current (VDS Drain-to-source breakdown voltage Gate threshold voltage Static drain-source resistance Test conditions BVDss ±16V 1mA, =VGS, 12V, 0.084 Min. Typ. Max.
±100
Unit
Table
Symbol Ciss Coss Crss
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-to-source charge Gate-to-drain ("Miller") charge Gate input resistance Test conditions Min. Typ. 9100 Max. Unit
f=1MHz, VGS=12V
200V, 40A, VGS=12V f=1MHz Gate Bias=0 Test signal level=20mV open drain
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. Unit
125V, 4.7,
4/13
STRH40N25FSY3
Electrical characteristics
Table
Symbol ISDM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current 40A, 40A, di/dt 100A/µs VDD= 50V, 150°C Test conditions Min. Typ. Unit
Pulse width limited safe operating area Pulsed: pulse duration 300µs, duty cycle 1.5%
Post-irradiation
Rad-Hard Power MOSFETs tested verify radiation capability. technology extremely resistant assurance well functioning device inside radiation environments. Every manufacturing tested total ionizing dose. (@Tj=25°C 100Krad (a)) Table
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)
On/off states
Parameter Test conditions Min. Typ. Max.
±100
Unit
Zero gate voltage drain current BVDss (VGS Gate body leakage current (VDS Drain-to-source breakdown voltage Gate threshold voltage Static drain-source resistance ±16V 1mA, =VGS, 12V, 0.084
According ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec.
5/13
Electrical characteristics
STRH40N25FSY3
Table
Single event effect, SOA(1)
(Mev/(mg/cm2)) 55.9 Energy (MeV) Range (µm) @VGS0V
Rad-Hard Power MOSFETs have been characterized heavy environment single event effect (SEE). Single event effect characterization illustrated
Table
Symbol ISDM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current 40A, 40A, di/dt 100A/µs VDD= 50V, 150°C Test conditions Min. Typ. Unit
Pulse width limited safe operating area Pulsed: pulse duration 300µs, duty cycle 1.5%
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STRH40N25FSY3
Electrical characteristics
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characteristics
Figure
Transfer characteristics
7/13
Electrical characteristics Figure Gate charge gate-source voltage Figure
STRH40N25FSY3 Capacitance variations
Figure
Normalized BVDSS temperature Figure
Static drain-source resistance
8/13
STRH40N25FSY3 Figure Normalized gate threshold voltage temperature
Electrical characteristics Figure Normalized resistance temperature
Figure Source drain-diode forward characteristics
9/13
Test circuit
STRH40N25FSY3
Test circuit
Figure Switching times test circuit resistive load
driver slope 1V/ns DUT)
10/13
STRH40N25FSY3
Package mechanical data
Package mechanical data
TO-254AA MECHANICAL DATA
DIM. inch TYP.
MIN. 13.59 13.59 20.07 6.32 1.02 3.53 16.89 0.89
MAX. 13.84 13.84 20.32 6.60 1.27 3.78 17.40 1.14
MIN. 0.535 0.535 0.790 0.249 0.040 0.139 0.665 0.035
MAX. 0.545 0.545 0.80 0.260 0.050 0.149 0.685 0.045
6.86 3.81 3.81 12.95 3.05 0.71 1.65 14.50 0.510
0.270 0.150 0.150 0.570 0.120 0.025 0.040 0.065
11/13
Revision history
STRH40N25FSY3
Revision history
Table
Date 18-Dec-2006 02-Mar-2007
Revision history
Revision First release Some values changed Table Table Changes
12/13
STRH40N25FSY3
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