Mbit (1Mb voltage EPROM EPROM Feature summary 2.7V 3.6V supp

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Mbit (1Mb voltage EPROM EPROM Feature summary 2.7V 3.6V supp

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M27W801
Mbit (1Mb voltage EPROM EPROM
Feature summary
2.7V 3.6V supply voltage READ operation Access time: 80ns 3.0V 3.6V 100ns 2.7V 3.6V compatible with M27C801 power consumption: 30µA Standby Current 15mA Active Current 5MHz Programming time 50µs/Byte High reliability CMOS technology 2,000V Protection 200mA Latchup Protection Immunity Electronic signature Manufacturer Code: Device Code: ECOPACK® packages available
FDIP32W
PDIP32
PLCC32
TSOP32
2006
1/24
www.st.com
Contents
M27W801
Contents
Summary description Device operation
2.10 Read mode Standby mode Line Output Control System considerations Programming PRESTO programming algorithm Program Inhibit Program Verify Electronic signature Erasure operation (applies EPROM)
Maximum rating parameters Package mechanical Part numbering Revision history
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M27W801
List tables
List tables
Table Table Table Table Table Table Table Table Table Table Table Table Table Table Table Table Table Signal names Operating modes Electronic signature Absolute maximum ratings measurement conditions. Capacitance Read mode characteristics Programming mode characteristics Read mode characteristics Margin mode characteristics Programming mode characteristics FDIP32WC Ceramic Frit-seal DIP, with window (0.260" 0.420"), package mechanical data PDIP32 Plastic DIP, mils width, package mechanical data PLCC32 lead Plastic Leaded Chip Carrier, package mechanical data TSOP32 lead Plastic Thin Small Outline, package mechanical data Ordering information scheme Document revision history
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List figures
M27W801
List figures
Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Logic diagram connections PLCC connections TSOP connections Programming flowchart testing input output waveform testing load circuit Read mode waveforms Margin mode waveforms Programming Verify modes waveforms FDIP32W Ceramic Frit-seal with window, package outline PDIP32 Plastic DIP, mils width, package outline PLCC32 lead Plastic Leaded Chip Carrier, package outline TSOP32 lead Plastic Thin Small Outline, package outline
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M27W801
Summary description
Summary description
M27W801 voltage Mbit EPROM offered ranges (ultra violet erase) (one time programmable). ideally suited microprocessor systems requiring large data program storage organized 1,048,576 bits. M27W801 operates read mode with supply voltage 2.7V 85°C temperature range. decrease operating power allows either reduction size battery increase time between battery recharges. FDIP32W (window ceramic frit-seal package) transparent lids which allow user expose chip ultraviolet light erase pattern. pattern then written device following programming procedure. applications where content programmed only time erasure required, M27W801 offered PDIP32, PLCC32 TSOP32 packages. order meet environmental requirements, offers M27W801 ECOPACK® packages. ECOPACK packages Lead-free. category second Level Interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com. Figure Logic diagram
A0-A19
Q0-Q7
GVPP
M27W801
AI02363
Table
A0-A19 Q0-Q7 GVPP
Signal names
Address Inputs Data Outputs Chip Enable Output Enable Program Supply Supply Voltage Ground
5/24
Summary description Figure connections
M27W801
AI02671
M27W801
GVPP
Figure
PLCC connections
GVPP M27W801
AI02365
6/24
M27W801 Figure TSOP connections
GVPP
Summary description
M27W801 (Normal)
AI02366
7/24
Device operation
M27W801
Device operation
operating modes M27W801 listed Operating Modes table. single power supply required read mode. inputs levels except GVPP Electronic Signature Margin Mode Reset.
Read mode
M27W801 control functions, both which must logically active order obtain data outputs. Chip Enable power control should used device selection. Output Enable output control should used gate data output pins, independent device selection. Assuming that addresses stable, address access time (tAVQV) equal delay from output (tELQV). Data available output after delay tGLQV from falling edge assuming that been addresses have been stable least tAVQV-tGLQV.
Standby mode
M27W801 standby mode which reduces supply current from 15mA 20µA with voltage operation 3.6V, Read Mode Characteristics table details. M27W801 placed standby mode applying CMOS high signal input. When standby mode, outputs high impedance state, independent GVPP input.
Line Output Control
Because EPROMs usually used larger memory arrays, product features line control function which accommodates multiple memory connection. line control function allows:
lowest possible memory power dissipation complete assurance that output contention will occur
most efficient these control lines, should decoded used primary device selecting function, while should made common connection devices array connected READ line from system control bus. This ensures that deselected memory devices their power standby mode that output pins only active when data required from particular memory device.
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M27W801
Device operation
System considerations
power switching characteristics Advanced CMOS EPROMs require careful decoupling devices. supply current, ICC, three segments that interest system designer: standby current level, active current level, transient current peaks that produced falling rising edges magnitude transient current peaks dependent capacitive inductive loading device output. associated transient voltage peaks suppressed complying with line output control properly selected decoupling capacitors. recommended that 0.1µF ceramic capacitor used every device between VSS. This should high frequency capacitor inherent inductance should placed close device possible. addition, 4.7µF bulk electrolytic capacitor should used between every eight devices. bulk capacitor should located near power supply connection point. purpose bulk capacitor overcome voltage drop caused inductive effects traces.
Programming
M27W801 been designed fully compatible with M27C801 same electronic signature. result M27W801 programmed M27C801 same programming equipment applying 12.75V 6.25V same PRESTO algorithm. When delivered (and after each `1's erasure EPROM), bits M27W801 state. Data introduced selectively programming "0"s into desired locations.Although only will programmed, both present data word. only change exposure ultraviolet light EPROM). M27W801 programming mode when input 12.75V pulsed VIL. data programmed applied bits parallel data output pins. levels required address data inputs TTL. specified 6.25V 0.25V.
PRESTO programming algorithm
PRESTO Programming Algorithm allows whole array programmed with guaranteed margin, typical time 52.5 seconds. This achieved with STMicroelectronics M27W801 several design innovations improve programming efficiency provide adequate margin reliability. Before starting programming internal MARGIN MODE circuit must order guarantee that each cell programmed with enough margin. Then sequence 50µs program pulses applied each byte until correct verify occurs (see Figure overprogram pulses applied since verify MARGIN MODE much higher than 3.6V, provides necessary margin.
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Device operation Figure Programming flowchart
6.25V, 12.75V MARGIN MODE
M27W801
50µs Pulse VERIFY Last Addr Addr
FAIL
RESET MARGIN MODE CHECK BYTES 1st: 2nd: 2.7V
AI01271C
Program Inhibit
Programming multiple M27W801s parallel with different data also easily accomplished. Except like inputs including GVPP parallel M27W801 common. level pulse applied M27W801's input, with 12.75V, will program that M27W801. high level input inhibits other M27W801s from being programmed.
Program Verify
verify (read) should performed programmed bits determine that they were correctly programmed. verify accomplished with VIL. Data should verified with tELQV after falling edge
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M27W801
Device operation
Electronic signature
Electronic Signature (ES) mode allows reading binary code from EPROM that will identify manufacturer type. This mode intended programming equipment automatically match device programmed with corresponding programming algorithm. mode functional 25°C ambient temperature range that required when programming M27W801. activate mode, programming equipment must force 11.5V 12.5V address line M27W801. identifier bytes then sequenced from device outputs toggling address line from VIH. other address lines must held during Electronic Signature mode. Byte VIL) represents manufacturer code byte VIH) device identifier code. STMicroelectronics M27W801, these identifier bytes given Table read-out outputs Note that M27W801 M27C801 have same identifier byte.
2.10
Erasure operation (applies EPROM)
erasure characteristics M27W801 such that erasure begins when cells exposed light with wavelengths shorter than approximately 4000 should noted that sunlight some type fluorescent lamps have wavelengths 3000-4000 range. Research shows that constant exposure room level fluorescent lighting could erase typical M27W801 about years, while would take approximately week cause erasure when exposed direct sunlight. M27W801 exposed these types lighting conditions extended periods time, suggested that opaque labels over M27W801 window prevent unintentional erasure. recommended erasure procedure M27W801 exposure short wave ultraviolet light which wavelength 2537 integrated dose (i.e. intensity exposure time) erasure should minimum W-sec/cm2. erasure time with this dosage approximately minutes using ultraviolet lamp with 12000 µW/cm2 power rating. M27W801 should placed within inch) lamp tubes during erasure. Some lamps have filter their tubes which should removed before erasure. Table Operating modes(1)
Mode Read Output Disable Program Program Inhibit Standby Electronic Signature
VIL, 0.5V.
Pulse
GVPP
Q7-Q0 Data Hi-Z Data Hi-Z Hi-Z Codes
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Maximum rating Table Electronic signature
M27W801
Identifier Manufacturer's Code Device Code
Data
Maximum rating
Stressing device above rating listed Absolute Maximum Ratings table cause permanent damage device. These stress ratings only operation device these other conditions above those indicated Operating sections this specification implied. Exposure Absolute Maximum Rating conditions extended periods affect device reliability. Refer also STMicroelectronics SURE Program other relevant quality documents. Table
Symbol TBIAS TSTG VIO(2) VA9(2) Ambient Operating
Absolute maximum ratings
Parameter Temperature(1) Value 13.5 Unit
Temperature Under Bias Storage Temperature Input Output Voltage (except Supply Voltage Voltage Program Supply Voltage
Depends range. Minimum voltage Input Output -0.5V with possible undershoot -2.0V period less than 20ns. Maximum voltage Output +0.5V with possible overshoot period less than 20ns.
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M27W801
parameters
parameters
This section summarizes operating measurement conditions, characteristics device. parameters Characteristic tables that follow derived from tests performed under Measurement Conditions summarized relevant tables. Designers should check that operating conditions their circuit match measurement conditions when relying quoted parameters. Table measurement conditions
High Speed Input Rise Fall Times Input Pulse Voltages Input Output Timing Ref. Voltages 10ns 1.5V Standard 20ns (10% 90%) 0.4V 2.4V 0.8V
Figure
testing input output waveform
High Speed 1.5V
Standard 2.4V 2.0V 0.8V
AI01822
0.4V
Figure
testing load circuit
1.3V
1N914
3.3k DEVICE UNDER TEST
30pF High Speed 100pF Standard includes capacitance
AI01823B
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parameters Table
Symbol COUT
M27W801 Capacitance(1)
Parameter Input Capacitance Output Capacitance Test Condition VOUT Unit
Sampled only, 100% tested.
Table
Symbol ICC1 ICC2 VIH(3)
Read mode characteristics(1)
Parameter Input Leakage Current Output Leakage Current Supply Current Supply Current (Standby) Supply Current (Standby) CMOS Program Current Input Voltage Input High Voltage Output Voltage Output High Voltage 2.1mA -1mA Test Condition VOUT VIL, GVPP VIL, IOUT 0mA, 5MHz, 3.6V 0.2V, 3.6V -0.6 Unit
2.7V 3.6V; must applied simultaneously with before removed simultaneously after VPP. Maximum voltage Output +0.5V.
Table
Symbol
Programming mode characteristics(1)
Parameter Input Leakage Current Supply Current Program Current Input Voltage Input High Voltage Output Voltage Output High Voltage Voltage 2.1mA -1mA 11.5 12.5 -0.3 Test Condition Unit
6.25V 0.25V; 12.75V 0.25V must applied simultaneously with before removed simultaneously after VPP.
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M27W801 Figure
A0-A19
parameters Read mode waveforms
VALID tAVQV tGLQV tELQV Q0-Q7 tGHQZ Hi-Z tEHQZ tAXQX VALID
AI01583B
Table
Read mode characteristics(1)
M27W801 -100 -120 (-150/-200) Test Unit Condition 3.0V 2.7V 2.7V 3.6V 3.6V 3.6V
Symbol
Parameter
tAVQV tELQV tGLQV tEHQZ(4) tGHQZ
tACC
Address Valid Output Valid Chip Enable Output Valid Output Enable Output Valid Chip Enable High Output Hi-Z Output Enable High Output Hi-Z Address Transition Output Transition
VIL, VIL,
tAXQX
2.7V 3.6V; must applied simultaneously with before removed simultaneously after VPP. Speed obtained with High Speed measurement conditions. Sampled only, 100% tested.
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parameters Figure
M27W801 Margin mode waveforms
tA9HVPH GVPP tVPHEL tA10HEH tEXA10X tEXVPX tVPXA9X
Reset tA10LEH
AI00736B
High level High level 12V.
Table
Symbol tA9HVPH tVPHEL tA10HEH tA10LEH tEXA10X tEXVPX tVPXA9X
Margin mode characteristics(1)
tAS9 tVPS tAS10 tAS10 tAH10 tVPH tAH9 Parameter High High High Chip Enable VA10 High Chip Enable High (Set) VA10 Chip Enable High (Reset) Chip Enable Transition VA10 Transition Chip Enable Transition Transition Transition Transition Test Condition Unit
6.25V 0.25V; 12.75V 0.25V must applied simultaneously with before removed simultaneously after VPP.
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M27W801 Figure Programming Verify modes waveforms
A0-A19 tAVEL Q0-Q7 tQVEL tVCHEL GVPP tVPHEL tELEH tVPLEL tEHVPX DATA tEHQX VALID
parameters
tEHAX DATA tEHQZ
tELQV
PROGRAM
VERIFY
AI01270
Table
Symbol tAVEL tQVEL tVCHEL tVPHEL tVPLVPH tELEH tEHQX tEHVPX tVPLEL tELQV tEHQZ(3) tEHAX
Programming mode characteristics(1)
tVCS tOES tPRT tOEH tDFP Parameter Address Valid Chip Enable Input Valid Chip Enable High Chip Enable High Chip Enable Rise Time Chip Enable Program Pulse Width (Initial) Chip Enable High Input Transition Chip Enable High Transition Chip Enable Chip Enable Output Valid Chip Enable High Output Hi-Z Chip Enable High Address Transition Test Condition Unit
6.25V 0.25V; 12.75V 0.25V must applied simultaneously with before removed simultaneously after VPP. Sampled only, 100% tested.
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Package mechanical
M27W801
Package mechanical
Figure FDIP32W Ceramic Frit-seal with window, package outline
FDIPW-b
Drawing scale.
Table
FDIP32WC Ceramic Frit-seal DIP, with window (0.260" 0.420"), package mechanical data
millimeters inches 5.72 0.51 3.91 3.89 0.41 1.45 0.23 41.73 38.10 2.54 14.99 16.18 15.24 13.06 6.60 10.67 3.18 1.52 1.40 4.57 4.50 0.56 0.30 42.04 18.03 13.36 4.10 2.49 0.260 0.420 0.600 1.500 0.100 0.590 0.057 0.020 0.154 0.153 0.016 0.009 1.643 0.637 0.514 0.125 0.060 0.225 0.055 0.180 0.177 0.022 0.012 1.655 0.710 0.526 0.161 0.098
Symbol
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M27W801
Package mechanical Figure PDIP32 Plastic DIP, mils width, package outline
PDIP-C
Drawing scale.
Table
Symbol
PDIP32 Plastic DIP, mils width, package mechanical data
millimeters 4.83 0.38 3.81 0.41 1.14 0.23 41.78 38.10 15.24 2.54 15.24 13.46 1.65 3.05 0.53 1.65 0.38 42.29 15.88 13.97 2.21 3.56 1.500 0.600 0.100 0.150 0.016 0.045 0.009 1.645 0.600 0.530 0.065 0.120 0.021 0.065 0.015 1.665 0.625 0.550 0.087 0.140 0.015 inches 0.190
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Package mechanical Figure PLCC32 lead Plastic Leaded Chip Carrier, package outline
M27W801
0.51 (.020) 1.14 (.045)
PLCC-A
Drawing scale.
Table
Symbol
PLCC32 lead Plastic Leaded Chip Carrier, package mechanical data
millimeters 3.17 1.53 0.38 0.33 0.66 3.56 2.41 0.53 0.81 0.10 12.32 11.35 4.78 7.62 14.86 13.89 6.05 10.16 1.27 0.00 0.89 12.57 11.51 5.66 15.11 14.05 6.93 0.13 0.035 0.400 0.050 0.300 0.485 0.447 0.188 0.585 0.547 0.238 0.000 inches 0.125 0.060 0.015 0.013 0.026 0.140 0.095 0.021 0.032 0.004 0.495 0.453 0.223 0.595 0.553 0.273 0.005
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M27W801
Package mechanical Figure TSOP32 lead Plastic Thin Small Outline, package outline
TSOP-a
Drawing scale.
Table
TSOP32 lead Plastic Thin Small Outline, package mechanical data
millimeters inches 1.200 0.050 0.950 0.170 0.100 0.150 1.050 0.250 0.210 0.100 19.800 18.300 0.500 7.900 0.500 20.200 18.500 8.100 0.700 0.0197 0.7795 0.7205 0.3110 0.0197 0.0020 0.0374 0.0067 0.0039 0.0472 0.0059 0.0413 0.0098 0.0083 0.0039 0.7953 0.7283 0.3189 0.0276
Symbol
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Part numbering
M27W801
Part numbering
Table
Example: Device Type Supply Voltage 2.7V 3.6V Device Function Mbit (1Mb Speed -100 (1),(2) -120 Design(3) -150 -200 Package FDIP32W(4) PDIP32 PLCC32 TSOP32: mm(4) Temperature Range Options Tape Reel Packing
High Speed, Characteristics section further information. This speed also guarantees 80ns access time 3.0V 3.6V. These speeds replaced 120ns. Packages option available request. Please contact STMicroelectronics local Sales Office.
Ordering information scheme
M27W801 -100
list available options (Speed, Package, etc.) further information aspect this device, please contact STMicroelectronics Sales Office nearest you.
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M27W801
Revision history
Revision history
Table
Date July 1999
Document revision history
Version First Issue FDIP32W Package Dimension, added (Table 12.) TSOP32 Package Dimension changed (Table 70°C Temperature Range removed Programming Time changed Read Mode Characteristics: tAVQV, tELQV, tGLQV, tEHQZ, tGHQZ changed (Table PDIP32 Mechanical data drawing changed (Table PLCC32 Mechanical data: clarified (Table Read Mode Characteristics: clarified (Table PLCC32 Mechanical data drawing clarified (Table Figure Standby value clarified Ordering Information Scheme clarified (Table TSOP32 Package Mechanical Data clarified (Table Document converted template (sections added, information moved). Packages ECOPACK® compliant. Package specifications updated (see Section Package mechanical). Revision Details
15-Mar-2000
21-Apr-2000
20-Feb-2002
06-May-2002 21-Mar-2003
22-May-2006
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M27W801
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Mbit (1Mb voltage EPROM EPROM Feature summary 2.7V 3.6V supp

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