SST37VF512 SST37VF010 SST37VF020 SST37VF040 SST37VF512 0402.7V-Re
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Kbit Mbit Mbit Mbit (x8) Many-Time Programmable Flash
SST37VF512 SST37VF010 SST37VF020 SST37VF040
SST37VF512 0402.7V-Read 512Kb (x8) flash memories
FEATURES:
Organized 128K 256K 512K 2.7-3.6V Read Operation Superior Reliability Endurance: least 1000 Cycles Greater than years Data Retention Power Consumption: Active Current: (typical) Standby Current: (typical) Fast Read Access Time: Latched Address Data Fast Byte-Program Operation: Byte-Program Time: (typical) Chip Program Time: seconds (typical) SST37VF512 seconds (typical) SST37VF010 seconds (typical) SST37VF020 seconds (typical) SST37VF040 Electrical Erase Using Programmer Does require source Chip-Erase Time: (typical) CMOS Compatibility JEDEC Standard Byte-wide Flash EEPROM Pinouts Packages Available 32-lead PLCC 32-lead TSOP (8mm 14mm) 32-pin PDIP Non-Pb (lead-free) packages available
PRODUCT DESCRIPTION
SST37VF512/010/020/040 devices 128K 256K 512K CMOS, Many-Time Programmable (MTP), cost flash, manufactured with SST's proprietary, high performance CMOS SuperFlash technology. split-gate cell design thick-oxide tunneling injector attain better reliability manufacturability compared with alternate approaches. SST37VF512/010/020/040 electrically erased programmed least 1000 times using external programmer, e.g., change contents devices inventory. SST37VF512/010/020/040 have erased prior programming. These devices conform JEDEC standard pinouts byte-wide flash memories. Featuring high performance Byte-Program, SST37VF512/010/020/040 provide typical Byte-Program time Designed, manufactured, tested wide spectrum applications, these devices offered with endurance least 1000 cycles. Data retention rated greater than years. SST37VF512/010/020/040 suited applications that require infrequent writes power nonvolatile storage. These devices will improve flexibility, efficiency, performance while matching cost nonvolatile applications that currently UV-EPROMs, OTPs, mask ROMs. meet surface mount conventional through hole requirements, SST37VF512/010/020/040 offered 32-lead PLCC, 32-lead TSOP 32-pin PDIP packages. Figures assignments.
Device Operation
SST37VF512/010/020/040 devices nonvolatile memory solutions that used instead standard flash devices in-system programmability required. functionally (Read) compatible with industry standard flash products.The device supports electrical Erase operation external programmer.
Read
Read operation SST37VF512/010/020/040 controlled OE#. Both have system obtain data from outputs. Once address stable, address access time equal delay from output (TCE). Data available output after delay from falling edge OE#, assuming been addresses have been stable least TCE-TOE. When high, chip deselected standby current only (typical) consumed. output control used gate data from output pins. data high impedance state when either VIH. Refer Figure timing diagram.
©2006 Silicon Storage Technology, Inc. S71151-07-000 8/06
logo SuperFlash registered trademarks Silicon Storage Technology, Inc. trademark Silicon Storage Technology, Inc. These specifications subject change without notice.
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
Byte-Program Operation
SST37VF512/010/020/040 programmed using external programmer. programming mode activated asserting 11.4-12V pin. device programmed using single pulse (WE# low) byte. Using programming algorithm, Byte-Program process continues byte-bybyte until entire chip been programmed. Refer Figure flowchart Figure timing diagram.
Product Identification Mode
Product Identification mode identifies devices SST37VF512, SST37VF010, SST37VF020, SST37VF040 manufacturer SST. This mode accessed hardware method. activate this mode, programming equipment must force (11.412V) address identifier bytes then sequenced from device outputs toggling address line details, Table hardware operation. TABLE Product Identification
Chip-Erase Operation
only change data from electrical erase that changes every device "1". SST37VF512/010/020/040 electrical Chip-Erase operation. entire chip erased (WE# low). order activate erase mode, 11.4-12V applied pins while low. other address data pins "don't care". falling edge will start Chip-Erase operation. Once chip been erased, bytes must verified FFH. Refer Figure flowchart Figure timing diagram.
Manufacturer's Device SST37VF512 SST37VF010 SST37VF020 SST37VF040
Address 0000H 0001H 0001H 0001H 0001H
Data
T1.2 1151
Design Considerations
SST37VF512/010/020/040 should have ceramic high frequency, inductance capacitor connected between GND. This capacitor should placed close package terminals possible. must remain stable entire duration Erase operation. must remain stable entire duration Program operation.
X-Decoder
SuperFlash Memory
Memory Address
Address Buffer Y-Decoder
Control Logic
Buffers
1151 B1.1
FIGURE Functional Block Diagram
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
SST37VF512 SST37VF010 SST37VF020 SST37VF040
SST37VF040 SST37VF020 SST37VF010 SST37VF512
SST37VF512 SST37VF010 SST37VF020 SST37VF040
SST37VF040 SST37VF020 SST37VF010 SST37VF512
32-lead PLCC View
1151 32-plcc P02a.3
FIGURE Assignments 32-lead PLCC
SST37VF040 SST37VF020 SST37VF010 SST37VF512
SST37VF512 SST37VF010 SST37VF020 SST37VF040
1151 32-tsop P01.0
Standard Pinout View
FIGURE Assignments 32-lead TSOP (8mm 14mm)
©2006 Silicon Storage Technology, Inc. S71151-07-000 8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
SST37VF040 SST37VF020 SST37VF010 SST37VF512 32-pin PDIP View
SST37VF512 SST37VF010 SST37VF020 SST37VF040
1151 32-pdip P02b.1
FIGURE Assignments 32-pin PDIP TABLE Description
Symbol AMS1-A0 DQ7-DQ0 Name Address Inputs Data Input/output Chip Enable Write Enable Output Enable Power Supply Ground Connection Unconnected pins.
T2.1 1151
Functions provide memory addresses. output data during Read cycles receive input data during Program cycles. outputs tri-state when high. activate device when low. program erase (WE# pulse during Program Erase) gate data output buffers during Read operation when provide 3.0V supply (2.7-3.6V)
Most significant address SST37VF512, SST37VF010, SST37VF020, SST37VF040
TABLE Operation Modes Selection
Mode Read Output Disable Standby Chip-Erase Byte-Program Program/Erase Inhibit Product Identification DOUT High High High High High DOUT Manufacturer's (BFH) Device Address AMS2 A1=VIL, A0=VIL AMS2 A1=VIL, A0=VIH
T3.2 1151
Device SST37VF512, SST37VF020, SST37VF020, SST37VF040 Most significant address SST37VF512, SST37VF010, SST37VF020, SST37VF040 Note: case 11.4-12V
©2006 Silicon Storage Technology, Inc. S71151-07-000 8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
Data Sheet Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" cause permanent damage device. This stress rating only functional operation device these conditions conditions greater than those defined operational sections this data sheet implied. Exposure absolute maximum stress rating conditions affect device reliability.) Temperature Under Bias -55°C +125°C Storage Temperature -65°C +150°C Voltage Ground Potential -0.5V VDD+0.5V Transient Voltage (<20 Ground Potential -2.0V VDD+2.0V Voltage Ground Potential -0.5V 13.2V Package Power Dissipation Capability 25°C) 1.0W Through Hole Lead Soldering Temperature Seconds) 300°C Surface Mount Solder Reflow Temperature: "with-Pb" units1: 240°C seconds "non-Pb" units: 260°C seconds Output Short Circuit Current2
Certain "with-Pb" package types capable 260°C seconds; please consult factory latest information. Outputs shorted more than second. more than output shorted time.
OPERATING RANGE
Range Commercial Ambient Temp +70°C 2.7-3.6V
CONDITIONS TEST
Input Rise/Fall Time Output Load Figures
TABLE Read Mode Operating Characteristics VDD=2.7-3.6V +70°C (Commercial))
Limits Symbol Parameter Read Current VIHC Standby Current Input Leakage Current Output Leakage Current Input Voltage Input High Voltage Input High Voltage (CMOS) Output Voltage Output High Voltage Supervoltage Current VDD-0.3 VDD-0.3 Units Test Conditions Address input=VILT/VIHT, f=1/TRC VDD=VDD CE#=VIL, OE#=VIHT, I/Os open CE#=VIHC, VDD=VDD VIN=GND VDD, VDD=VDD VOUT=GND VDD, VDD=VDD VDD=VDD VDD=VDD VDD=VDD IOL=100 VDD=VDD IOH=-100 VDD=VDD CE#=OE#=VIL, A9=VH
T4.6 1151
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
Data Sheet TABLE Program/Erase Operating Characteristics VDD=2.7-3.6V 25°C±5°C)
Limits Symbol Parameter IHA9 IHOE# Erase Program Current Input Leakage Current Output Leakage Current Supervoltage Supervoltage Current Supervoltage Current 11.4 Units OE#=VH Max, A9=VH Max, VDD=VDD Max, CE#=VIL, OE#=11.4-12V, VDD=VDD Max, WE#=VIL
T5.2 1151
Test Conditions CE#=VIL, OE#=VH, VDD=VDD Max, WE#=VIL VIN=GND VDD, VDD=VDD VOUT=GND VDD, VDD=VDD
TABLE Recommended System Power-up Timings
Symbol TPU-READ1 TPU-WRITE
Parameter Power-up Read Operation Power-up Write Operation
Minimum
Units
T6.1 1151
This parameter measured only initial qualification after design process change that could affect this parameter.
TABLE Capacitance 25°C, Mhz, other pins open)
Parameter CI/O
Description Capacitance Input Capacitance
Test Condition VI/O
Maximum
T7.0 1151
CIN1
This parameter measured only initial qualification after design process change that could affect this parameter.
TABLE Reliability Characteristics
Symbol NEND1
Parameter Endurance Data Retention Latch
Minimum Specification 10,000
Units Cycles Years
Test Method JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard
T8.3 1151
ILTH1
This parameter measured only initial qualification after design process change that could affect this parameter.
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
CHARACTERISTICS
TABLE Read Cycle Timing Parameters 2.7-3.6V +70°C (Commercial))
SST37VF512-70 SST37VF010-70 SST37VF020-70 SST37VF040-70 Symbol TCLZ1 TOLZ1 TCHZ1 TOHZ1 TOH1 Parameter Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time Active Output Active Output High High-Z Output High High-Z Output Output Hold from Address Change Units
T9.3 1151
This parameter measured only initial qualification after design process change that could affect this parameter.
TABLE Program/Erase Cycle Timing Parameters 2.7-3.6V 25°C±5°C)
Symbol TCES TCEH TPRT TVPS TVPH TART TA9S TA9H Parameter Byte-Program Time Setup Time Hold Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Rise Time Program Erase Setup Time Program Erase Hold Time Program Erase Program Pulse Width Erase Pulse Width OE#/A9 Recovery Time Erase Rise Time during Erase Setup Time during Erase Hold Time during Erase Units
T10.1 1151
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
ADDRESS
TOLZ
TOHZ TCHZ HIGH-Z DATA VALID
1151 F03.0
DQ7-0
HIGH-Z
TCLZ
DATA VALID
FIGURE Read Cycle Timing Diagram
ADDRESS (EXCEPT
TCEH
DQ7-0 TART TA9H TCES
1151 F04.0
TVPS TVPH TPRT TA9S
FIGURE Chip-Erase Timing Diagram
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
ADDRESS
ADDRESS VALID
TCEH
DQ7-0
HIGH-Z
DATA VALID
TVPS TPRT
TVPH
TCES
1151 F05.0
FIGURE Byte-Program Timing Diagram
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
VIHT
INPUT
REFERENCE POINTS
OUTPUT
VILT
1151 F06.1
test inputs driven VIHT (0.9 VDD) logic VILT (0.1 VDD) logic "0". Measurement reference points inputs outputs (0.5 (0.5 VDD). Input rise fall times (10% 90%)
Note: VINPUT Test VOUTPUT Test VIHT VINPUT HIGH Test VILT VINPUT Test
FIGURE Input/Output Reference Waveforms
TESTER
1151 F07.1
FIGURE Test Load Example
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
Start
Erase 100ms pulse (WE# VIL)
OE#/A9
Wait Recovery Time
Read Device
Compare bytes
Device Passed
Device Failed
1151 F08.0
FIGURE Chip-Erase Algorithm
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
Start
Erase*
Address First Location; Load Data
Program pulse (WE# VIL)
Increment Address
Last Address?
Wait
Read Device
Compare bytes original data
Device Passed
Device Failed
1151 F09.2
*See Figure
FIGURE Byte-Program Algorithm
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
PRODUCT ORDERING INFORMATION
XXXX Environmental Attribute non-Pb Package Modifier pins leads Package Type PLCC PDIP TSOP (type 14mm) Operating Temperature Commercial +70°C Minimum Endurance 1,000 cycles Read Access Speed Device Density Mbit Mbit Mbit Kbit Voltage 2.7-3.6V Product Series Many-Time Programmable Flash Flash memories with flash pinout
Environmental suffix denotes non-Pb solder. non-Pb solder devices "RoHS Compliant".
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
Data Sheet Valid combinations SST37VF512 SST37VF512-70-3C-NH* SST37VF512-70-3C-WH* SST37VF512-70-3C-PH* SST37VF512-70-3C-NHE* SST37VF512-70-3C-WHE* Valid combinations SST37VF010 SST37VF010-70-3C-NH SST37VF010-70-3C-NHE SST37VF010-70-3C-WH SST37VF010-70-3C-WHE SST37VF010-70-3C-PH SST37VF010-70-3C-PHE
Valid combinations SST37VF020 SST37VF020-70-3C-NH SST37VF020-70-3C-NHE SST37VF020-70-3C-WH SST37VF020-70-3C-WHE SST37VF020-70-3C-PH SST37VF020-70-3C-PHE
Valid combinations SST37VF040 SST37VF040-70-3C-NH SST37VF040-70-3C-NHE SST37VF040-70-3C-WH SST37VF040-70-3C-WHE SST37VF040-70-3C-PH SST37VF040-70-3C-PHE
Note: Valid combinations those products mass production will mass production. Consult your sales representative confirm availability valid combinations determine availability combinations. recommended designs.
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
PACKAGING DIAGRAMS
VIEW
Optional Identifier .048 .042 .495 .485 .453 .447
SIDE VIEW
.112 .106 .020 MAX. .029 .023 .040 .030
BOTTOM VIEW
.042 .048 .595 .553 .585 .547 .032 .026
.021 .013 .400 .530 .490
.050 .015 Min. .050 .095 .075 .140 .125 .032 .026
Note: Complies with JEDEC publication MS-016 dimensions, although some dimensions more stringent. linear dimensions inches (max/min). Dimensions include mold flash. Maximum allowable mold flash .008 inches. Coplanarity: mils.
32-plcc-NH-3
32-LEAD PLASTIC LEAD CHIP CARRIER (PLCC) PACKAGE CODE:
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
Identifier
1.05 0.95 0.50
8.10 7.90
0.27 0.17
12.50 12.30 DETAIL 1.20 max. 0.70 0.50 14.20 13.80
0.15 0.05
0.70 0.50 Note: Complies with JEDEC publication MO-142 dimensions, although some dimensions more stringent. linear dimensions millimeters (max/min). Coplanarity: Maximum allowable mold flash 0.15 package ends, 0.25 between leads.
32-tsop-WH-7
32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 14MM PACKAGE CODE:
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
Identifier
.075 .065 Base Plane Seating Plane
1.655 1.645
PLCS. .200 .170
.625 .600 .550 .530
.050 .015 .100 .150 .120
.012 .008 .600
.080 .070
.065 .045
.022 .016
Note: Complies with JEDEC publication MO-015 dimensions, although some dimensions more stringent. linear dimensions inches (max/min). Dimensions include mold flash. Maximum allowable mold flash .010 inches. 32-pdip-PH-3
32-PIN PLASTIC DUAL IN-LINE PINS (PDIP) PACKAGE CODE:
©2006 Silicon Storage Technology, Inc.
S71151-07-000
8/06
Kbit Mbit Mbit Mbit Many-Time Programmable Flash SST37VF512 SST37VF010 SST37VF020 SST37VF040
Data Sheet TABLE Revision History
Number Description Date 2002 2003
2002 Data Book Part number changes page additional information Clarified Test Conditions Read Current parameter Table page Address input VILT/VIHT CE#=OE#=VILT 2004 Data Book Added non-Pb MPNs removed footnote (See page Removed parts, related footnote, MPNs (See page Added parts MPNs package Changed Byte-Program time from Updated chip program times Separated Supervoltage Current Table page Added non-Pb 32-PDIP MPNs Mbit devices Clarified solder temperature profile under "Absolute Maximum Stress Ratings" page Changed program voltage from 12.6V globally
2003 2004
2004
2006
Silicon Storage Technology, Inc. 1171 Sonora Court Sunnyvale, 94086 Telephone 408-735-9110 408-735-9036 www.SuperFlash.com www.sst.com
©2006 Silicon Storage Technology, Inc. S71151-07-000 8/06
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