(note Volts N-Channel Trench Gate MOSFET Features: Trench ga

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(note Volts N-Channel Trench Gate MOSFET Features: Trench ga

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SFF85N06M SFF85N06Z
(note Volts N-Channel Trench Gate MOSFET
Features:
Trench gate technology high cell density Lowest ON-resistance industry Enhanced operating temperature range Hermetically Sealed, Isolated Package Total Gate Charge Fast Switching Enhanced replacement IRFP064 TXV, S-Level screening available Improved (RDS(ON) figure merit
DESIGNER'S DATA SHEET
TO-254 TO-254Z Note maximum current limited package configuration
Maximum Ratings
Drain Source Voltage Gate Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current limited) Max. Avalanche current Repetitive Avalanche Energy Total Power Dissipation Operating Storage Temperature Maximum Thermal Resistance (Junction Case)
TO-254 TO-254Z
Symbol
VDSS TSTG R0JC
Value
(note (note +175 (typ 0.55)
Units
NOTE: specifications subject change without notification. SCD's these devices should reviewed SSDI prior release.
DATA SHEET FT0020A
14830 Valley View Blvd Mirada, 90638 Phone: (562) 404-7855 Fax: (562) 404-1773 ssdi@ssdi-power.com www.ssdi-power.com
SFF85N06M SFF85N06Z
Symbol
250µA 10V, 30A, 25oC 4.5V, 20A, 25oC 10V, 30A, Tj=125oC 10V, 30A, 200oC VGS, 250µA ±20V 48V, 25oC 48V, 125oC 48V, 200oC 15V, 30A, 25oC 110A 110A 2.5O 110A, 100A, di/dt 100A/usec BVDSS
Electrical Characteristics
Units
10.5 7500 1050 ±100 0.25
Drain Source Breakdown Voltage
Drain Source State Resistance
RDS(on)
Gate Threshold Voltage Gate Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate Source Charge Gate Drain Charge Turn Delay Time Rise Time Turn Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
VGS(th) IGSS IDSS td(on) td(off) IRM(rec) Ciss Coss Crss
nsec
nsec
NOTES: Pulse Test: Pulse Width 300µsec, Duty Cycle Ordering Information, Price, Availability Contact Factory. Screening MIL-PRF-19500. Package Outlines Contact Factory. Unless Otherwise Specified, Electrical Characteristics @25oC.
Available Part Numbers:
Consult Factory
ASSIGNMENT (Standard) Package Drain Source Gate TO-254 TO-254Z
NOTE: specifications subject change without notification. SCD's these devices should reviewed SSDI prior release.
DATA SHEET FT0020A

(note Volts N-Channel Trench Gate MOSFET Features: Trench ga

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