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GP1L51J0000F 3mm, Slit 0.5mm Darlington Phototransistor Output, C


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GP1L51J0000F
GP1L51J0000F
3mm, Slit 0.5mm Darlington Phototransistor Output, Case package Transmissive Photointerrupter
GP1L51J0000F standard, darlington phototransistor output, transmissive photointerrupter with opposing emitter detector case, providing non-contact sensing. this family devices, emitter detector inserted case, resulting through-hole design. case includes additional screw fixing holes, both sides 3.2mm diameter.
Agency approvals/Compliance
Compliant with RoHS directive
Applications
General purpose detection object presence motion. Example Printer, FAX, Optical storage unit
Features
Transmissive with darlington phototransistor output Highlights Verical Slit alternate motion detection Includes additional screw fixing holes Parameters Width Slit Width (detector side): 0.5mm Package Lead free RoHS directive compliant
Notice content data sheet subject change without prior notice. absence confirmation device specification sheets, SHARP takes responsibility defects that occur equipment using SHARP devices shown catalogs, data books, etc. Contact SHARP order obtain latest device specification sheets before using SHARP device.
Sheet No.: D3-A03101EN Date Oct. 2005 SHARP Corporation
GP1L51J0000F
Internal Connection Diagram
view
Anode Cathode Collector Emitter
Outline Dimensions
view 12.2±0.3 3+0.2 -0.1
(Unit
section
(2.5) (Detctor center)
GP1L51
section
2-3.2±0.2
0.4+0.3 -0.1
(9.2)
10MIN.
Date code
4-0.45+0.3 -0.1 (2.54)
Unspecified tolerance shall follows
Dimensions 6<d18
Reference dimensions
Tolerance ±0.1 ±0.2
Product mass approx. 0.6g soldering material Sn-3Ag-0.5Cu
Model
Sheet No.: D3-A03101EN
GP1L51J0000F
Date code digit)
digit Year production A.D. Mark 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 digit Month production Month Mark
repeats year cycle
Country origin
Japan
Sheet No.: D3-A03101EN
GP1L51J0000F
Absolute Maximum Ratings
Parameter Symbol Rating Forward current Peak forward current Input Reverse voltage Power dissipation Collector-emitter voltage VCEO Emitter-collector voltage VECO Output Collector current Collector power dissipation Operating temperature Topr Storage temperature Tstg +100 Soldering temperature Tsol
(Ta=25°C) Unit
Refer Fig. Pulse width 100s, Duty ratio=0.01 less
Electro-optical Characteristics
Parameter Forward voltage Input Peak forward voltage Reverse current Output Collector dark current Collector current Transfer Collector-emitter saturation voltage characRise time teristics Response time Fall time Symbol ICEO VCE(sat) Condition IF=20mA IFM=0.5A VR=3V VCE=10V VCE=2V, IF=1mA IF=2mA, IC=0.5mA VCE=2V, IC=2mA, RL=100 MIN. TYP. 1.25
(Ta=25°C) MAX. Unit
Sheet No.: D3-A03101EN
GP1L51J0000F
Fig.1 Forward Current Ambient Temperature
Forward current (mA)
Fig.2 Collector Power Dissipation Ambient Temperature
Collector power dissipation (mW)
Ambient temperature (°C)
Ambient temperature (°C)
Fig.3 Peak Forward Current Duty Ratio
Pulse width100s Ta=25°C Peak forward current (mA)
Fig.4 Forward Current Forward Voltage
Ta=75°C 50°C Forward current (mA) 25°C -25°C
10-2 10-1 Duty ratio
Foward voltage
Fig.5 Collector Current Forward Current
Collector current (mA) Forward current (mA) VCE=2V Ta=25°C
Fig.6 Collector Current Collector-emitter Voltage
Ta=25°C
Collector current (mA)
=2.5mA (MAX.) 1.5mA 0.5mA
Collector-emitter
Sheet No.: D3-A03101EN
GP1L51J0000F
Fig.7 Collector Current Ambient Temperature
Collector current (mA) Ambient temperature (°C) F=1mA CE=2V
Fig.8 Collector-emitter Saturation Voltage Ambient Temperature
Collector-emitter saturation voltage (sat) IF=2mA IC=0.5mA
Ambient temperature (°C)
Fig.9 Response Time Load Resistance
Fig.10 Test Circuit Response Time
VCE= =25°C Response time
Input Output
Input
Output
Load resistance
Fig.11 Frequency Response
VCE=2V IC=10mA Ta=25°C
Fig.12 Collector Dark Current Ambient Temperature
10-4 VCE=20V 10-5 Collector dark current ICEO 10-6 10-7 10-8 10-9 10-10 10-11
Voltage gain (dB)
Frequency (Hz)
Ambient temperature (°C)
Sheet No.: D3-A03101EN
GP1L51J0000F
Fig.13 Detecting Position Characteristics
IF=1mA, VCE=2V Ta=25°C
Fig.14 Detecting Position Characteristics
IF=1mA, VCE=2V Ta=25°C Relative collector current Shield Sensor
Relative collector current
Sensor Shield
-1.5
-0.5 Shield moving distance (mm)
Shield moving distance (mm)
Remarks Please aware that data graph just reference guarantee.
Sheet No.: D3-A03101EN
GP1L51J0000F
Design Considerations Design guide
Prevention detection error prevent photointerrupter from faulty operation caused external light, detecting face external light. Position opaque board Opaque board shall installed place more from elements. (Example)
more
This product designed against irradiation incorporates non-coherent IRED.
Degradation
general, emission IRED used photocouplers will degrade over time. case long term operation, please take general IRED degradation (50% degradation over years) into design consideration.
Parts
This product assembled using below parts.
Photodetector (qty.
Category Phototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) Sensitivity wavelength (nm) Response time
Photo emitter (qty.
Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) Frequency (MHz)
Material
Case Black NORYL resin Lead frame plating Solder dip. (Sn-3Ag-0.5Cu)
Sheet No.: D3-A03101EN
GP1L51J0000F
Manufacturing Guidelines Soldering Method Flow Soldering:
Soldering should completed below 260°C within Please take care external force exert lead pins. Please don't soldering with preheating, please don't soldering reflow.
Hand soldering
Hand soldering should completed within when point solder iron below 350C. Please solder within time. Please don't touch terminals directly soldering iron. Soldered product shall treat normal temperature.
Other notice
Please test soldering method actual condition make sure soldering works fine, since impact junction between device varies depending cooling soldering conditions.
Flux
Some flux, which used soldering, crack package synergistic effect alcohol flux rise temperature heat soldering. Therefore, using flux, please make sure that does have influence appearance reliability photointerrupter.
Sheet No.: D3-A03101EN
GP1L51J0000F
Cleaning instructions Solvent cleaning
Solvent temperature should 45°C below. Immersion time should minutes less.
Ultrasonic cleaning
affect device ultrasonic cleaning different cleaning bath size, ultrasonic power output, cleaning time, size device mounting condition etc. Please test actual using condition confirm that doesn't occur defect before starting ultrasonic cleaning.
Recommended solvent materials
Ethyl alcohol, Methyl alcohol Isopropyl alcohol.
Presence
This product shall contain following materials. they used production process this product. Regulation substances CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such PBBOs PBBs used this product all. This product shall contain following materials banned RoHS Directive (2002/95/EC). Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE).
Sheet No.: D3-A03101EN
GP1L51J0000F
Package specification Case package Package materials
Anti-static plastic Polyethtylene Moltopren Urethane Partition Corrugated fiberboard Packing case Corrugated fiberboard
Package method
products shall packaged plastic bag, Ends shall fixed stoppers. bottom packing case covered with moltopren, partition packing case. Each partition should have plastic bag. plastic bags containing product packing case. Moltopren should located after product settled packing contains pcs).
Packing composition
Moltopren
Partition
Anti-static plastic
Packing case
Sheet No.: D3-A03101EN
GP1L51J0000F
Important Notices
circuit application examples this publication provided explain representative applications SHARP devices intended guarantee circuit design license intellectual property rights. SHARP takes responsibility problems related intellectual property right third party resulting from SHARP's devices. Contact SHARP order obtain latest device specification sheets before using SHARP device. SHARP reserves right make changes specifications, characteristics, data, materials, structure, other contents described herein time without notice order improve design reliability. Manufacturing locations also subject change without notice. Observe following points when using devices this publication. SHARP takes responsibility damage caused improper devices which does meet conditions absolute maximum ratings used specified relevant specification sheet meet following conditions: devices this publication designed general electronic equipment designs such Personal computers Office automation equipment Telecommunication equipment [terminal] Test measurement equipment Industrial control Audio visual equipment Consumer electronics (ii) Measures such fail-safe function redundant design should taken ensure reliability safety when SHARP devices used connection with equipment that requires higher reliability such Transportation control safety equipment (i.e., aircraft, trains, automobiles, etc.) Traffic signals leakage sensor breakers Alarm equipment Various safety devices, etc. (iii) SHARP devices shall used connection with equipment that requires extremely high level reliability safety such Space applications Telecommunication equipment [trunk lines] Nuclear power control equipment Medical other life support equipment (e.g., scuba). SHARP devices listed this publication fall within scope strategic products described Foreign Exchange Foreign Trade Japan, necessary obtain approval export such SHARP devices. This publication proprietary product SHARP copyrighted, with rights reserved. Under copyright laws, part this publication reproduced transmitted form means, electronic mechanical, purpose, whole part, without express written permission SHARP. Express written permission also required before this publication made third party. Contact consult with SHARP representative there questions about contents this publication.
[H156]
Sheet No.: D3-A03101EN

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