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DS135A DS135A Features Diffused Junction Type Silicon D
Top Searches for this datasheetOrdering number ENA0150 DS135A DS135A Features Diffused Junction Type Silicon Diode 1.0A Power Rectifier Plastic molded structure. Peak reverse voltage VRM= -100 -400V. Average output current IO=1.0A. Specifications Absolute Maximum Ratings Ta=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol IFSM Tstg Ta=60°C 50Hz sine wave, 1cycle Conditions DS135AE -100 +150 DS135AD -200 DS135AC -400 Unit Electrical Characteristics Ta=25°C Parameter Forward Voltage Reverse Current Symbol Conditions IF=1.0A each Ratings Unit SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment. TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71107RC TB-00001905 A0150-1/3 DS135A Package Dimensions unit (typ) 7808-001 Cathode mark 27.0MIN 5.2MAX 27.0MIN Resistive, inductive load Average Output Current, Forward Current, Capacitive load L=58mm 20mm 10mm L=58mm 20mm 10mm L=L1+L2 IT10343 Ambient Temperature, IT10342 IFSM Forward Voltage, Surge Foward Current, IFSM Number Cycles, IT10344 25°C A0150-2/3 DS135A SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellctual property rights which resulted from technical information products mentioned above. This catalog provides information July, 2007. Specifications information herein subject change without notice. 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