CPH6622 CPH6622 Features N-Channel Silicon MOSFET

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CPH6622 CPH6622 Features N-Channel Silicon MOSFET

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Ordering number ENA0398A
CPH6622
CPH6622
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance. 2.5V drive. Best suited charging discharging switch. Common-drain type. With built-in gate resistor.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW12ms, duty cycle1% Mounted ceramic board (900mm20.8mm)1unit Mounted ceramic board (900mm20.8mm) Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS= ±8V, VDS=0V VDS=10V, ID=1mA Ratings Unit
Marking
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80807 71807PE TC-00000813 A0398-1/4
CPH6622
Continued from preceding page.
Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol RDS(on)1 RDS(on)2 td(on) td(off) Conditions VDS=10V, ID=1.5A ID=3A, VGS=4V ID=3A, VGS=2.5V specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A IS=3A, VGS=0V Ratings 1400 1000 10.5 Unit
Package Dimensions
unit (typ) 7018A-013
0.15
Electrical Connection
0.05
Source1 Drain Source2 Gate2 Drain Gate1
view
0.95
Source1 Drain Source2 Gate2 Drain Gate1 SANYO CPH6
Switching Time Test Circuit
ID=1.5A RL=6.67 VDD=10V
PW=10µs D.C.1%
VOUT
CPH6622
Rg=1k
A0398-2/4
CPH6622
VDS=10V
Drain Current,
GS=1
Drain Current,
Ta=75°
25°C
IT12752
-25°C
IT12753
Drain-to-Source Voltage,
RDS(on)
Gate-to-Source Voltage,
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Ta=25°C ID=3A
IT12754
-100
IT12755
Gate-to-Source Voltage,
Ambient Temperature,
VGS=0V
Forward Transfer Admittance,
VDS=10V
0.01 IT12757
Drain Current,
IT12756
Time
(off)
Diode Forward Voltage,
Gate-to-Source Voltage,
VDS=10V ID=3A
Switching Time, Time
1000
d(on)
Drain Current,
IT10968
Total Gate Charge,
Ta=7 25°C -25°
Source Current,
IT12758
A0398-3/4
CPH6622
Allowable Power Dissipation,
IDP=18A
PW10µs
Mounted ceramic board(900mm20.8mm)1unit
Drain Current,
ID=3A
Operation this area limited RDS(on).
0.01 0.01
Ta=25°C Single pulse Mounted ceramic board (900mm20.8mm) 1unit
IT12703
Drain-to-Source Voltage,
Ambient Temperature,
IT12704
Note usage Since CPH6622 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellctual property rights which resulted from technical information products mentioned above.
This catalog provides information August, 2007. Specifications information herein subject change without notice.
A0398-4/4

CPH6622 CPH6622 Features N-Channel Silicon MOSFET

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