CPH6619 CPH6619 Features N-Channel P-Channel Silicon MO

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CPH6619 CPH6619 Features N-Channel P-Channel Silicon MO

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Ordering number ENA0473
CPH6619
CPH6619
Features
N-Channel P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
Composite type on-resistance ultra-high switching P-channel MOSFET small signal N-channel MOSFET driving P-channel MOSFET enables high-density mounting. Excellent ON-resistance characterristic. Best suited load switches. N-channel 1.5V drive, P-channel 1.8V drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (900mm2!0.8mm) 1unit Conditions N-channel +150 P-channel Unit
Electrical Characteristics Ta=25°C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.13 0.22 12.8 Symbol Conditions Ratings Unit
Marking
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72006PE TC-00000048 A0473-1/7
CPH6619
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) td(off) ID=-1mA, VGS=0V VDS=-12V, VGS=0V VGS=±6.4V, VDS=0V VDS=-6V, ID=-1mA VDS=-6V, ID=-1A ID=-1A, VGS=-4.5V ID=-0.5A, VGS=-2.5V ID=-0.2A, VGS=-1.8V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-6V, VGS=-4.5V, ID=-2.0A VDS=-6V, VGS=-4.5V, ID=-2.0A VDS=-6V, VGS=-4.5V, ID=-2.0A IS=-2.0A, VGS=0V -0.3 1.74 -0.89 -1.5 -1.0 Symbol td(on) td(off) Conditions specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0V Ratings 1.58 0.26 0.31 0.87 Unit
Package Dimensions
unit (typ) 7018A-007
Electrical Connection
0.15
0.05
Source1 Gate1 Drain2 Source2 Gate2 Drain1
view
0.95
Source1 Gate1 Drain2 Source2 Gate2 Drain1 SANYO CPH6
A0473-2/7
CPH6619
Switching Time Test Circuit
[N-channel]
VDD=15V ID=150mA RL=100
[P-channel]
VDD= RL=6.0
VOUT
-4.5V
VOUT
PW=10µs D.C.1%
PW=10µs D.C.1%
CPH6619
CPH6619
0.16 0.14 0.12 0.10 0.08
3.5V 4.0V
[Nch]
0.30
VDS=10V
[Nch]
0.25
Drain Current,
Drain Current,
0.15
VGS=1.5V
0.06 0.04 0.02 IT00029
0.10
0.05
IT00030
Drain-to-Source Voltage,
RDS(on)
Gate-to-Source Voltage,
[Nch] Ta=25°C
RDS(on)
0.20
[Nch] VGS=4V
IT00032
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
ID=80mA 40mA
Ta=75°C
25°C -25°C
0.01
Gate-to-Source Voltage,
IT00031
Drain Current,
A0473-3/7
CPH6619
RDS(on)
[Nch] VGS=2.5V Static Drain-to-Source On-State Resistance, RDS(on)
RDS(on)
[Nch] VGS=1.5V
Static Drain-to-Source On-State Resistance, RDS(on)
Ta=75°C 25°C
-25°C
Ta=75°C -25°C 25°C
0.01
Drain Current,
IT00033
0.001
0.01
RDS(on)
Drain Current,
IT00034
[Nch] Forward Transfer Admittance,
[Nch] VDS=10V
Static Drain-to-Source On-State Resistance, RDS(on)
-Ta=
25°C
75°C
25°C
Ambient Temperature,
0.01 0.01
IT00035
Drain Current,
1000
IT00036
[Nch] VGS=0V Switching Time, Time
Time
[Nch] VDD=15V VGS=4V
Source Current,
td(off)
td(on)
0.01
IT00037
0.01
IT00038
Diode Forward Voltage,
Drain Current,
Ciss, Coss, Crss
[Nch] f=1MHz Gate-to-Source Voltage,
VDS=10V ID=150mA
[Nch]
Ciss, Coss, Crss
Ciss Coss
Crss
Drain-to-Source Voltage,
IT00039
Total Gate Charge,
IT00040
A0473-4/7
CPH6619
IDP=1.6A
[Nch] 10ms
ID=0.4A
Drain Current,
Operation this area limited RDS(on).
0.01
Ta=25°C Single pulse Mounted ceramic board (900mm2!0.8mm)1unit
IT11328
Drain-to-Source Voltage,
-2.0
[Pch]
-2.0 -1.8 -1.6
[Pch] VDS=
Drain Current,
-1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2
-1.8
Drain Current,
-1.4 -1.2 -1.0 -0.8 -0.6 -0.4
1.5V
-0.5 -1.0
-0.1 -0.2 -0.3 -0.4 -0.5 IT04314 -1.5 -2.0 -2.5 IT04315
Drain-to-Source Voltage,
RDS(on)
Gate-to-Source Voltage,
[Pch] Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
RDS(on)
VGS= -1.0V
-0.2
-25°
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on)
-1.0A -0.5A
0.2A -200
0.5A
-2.5
-4.5
Gate-to-Source Voltage,
IT11326
Ambient Temperature,
IT11327
[Pch] VDS=
Forward Transfer Admittance,
[Pch] VGS=0V
Source Current,
25°C
-1.0
-0.1
-1.0
IT04318
-0.1 -0.4
-0.6
-0.8
-25°C
Ta=7
-1.0
-1.2
-1.4 IT04319
Drain Current,
Diode Forward Voltage,
A0473-5/7
CPH6619
Time
[Pch] VDD= VGS= -4.5V
Ciss, Coss, Crss
1000
Ciss, Coss,-Crss
[Pch] f=1MHz
Switching Time, Time
td(off)
Ciss
Coss
Crss
td(on)
-0.1 -1.0 IT04320
IT04321
Drain Current,
-4.5 -4.0 -3.5
VDS=
Drain-to-Source Voltage,
[Pch]
[Pch] 100µs
IDP=
10µs
Gate-to-Source Voltage,
Drain Current,
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5
-1.0 -0.1
Operation this area limited RDS(on).
-0.01 -0.01
Ta=25°C Single pulse Mounted ceramic board (900mm2!0.8mm)1unit
-0.1 -1.0
Total Gate Charge,
IT04322
Drain-to-Source Voltage,
IT11329
[Pch, Nch]
Allowable Power Dissipation,
Ambient Temperature,
IT11330
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CPH6619
Note usage Since CPH6619 MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information July, 2006. Specifications information herein subject change without notice.
A0473-7/7

CPH6619 CPH6619 Features N-Channel P-Channel Silicon MO

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