CPH5863 CPH5863 Features MOSFET N-Channel Silicon MOSFE

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CPH5863 CPH5863 Features MOSFET N-Channel Silicon MOSFE

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Ordering number ENA0465
CPH5863
CPH5863
Features
MOSFET N-Channel Silicon MOSFET Schottky Barrier Diode
General-Purpose Switching Device Applications
converter applications. Composite type with N-channel sillicon MOSFET schottky barrier diode contained package facilitating high-density mounting. [MOSFET] 2.5V drive. [SBD] Short reverse recovery time. forward voltage. reverse current.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (1000mm20.8mm) 1unit +125 Symbol Conditions Ratings Unit
Marking
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907PE TC-00000875 A0465-1/5
CPH5863
Continued from preceding page.
Parameter [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IFSM Tstg 50Hz sine wave, cycle +125 +125 Symbol Conditions Ratings Unit
Electrical Characteristics Ta=25°C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time IR=300µA IF=700mA VR=15V VR=10V, f=1MHz, cycle IF=IR=100mA, specified Test Circuit. 0.55 V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.3A ID=1.3A, VGS=4V ID=0.7A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=10V, VGS=4V, ID=2.5A VDS=10V, VGS=4V, ID=2.5A VDS=10V, VGS=4V, ID=2.5A IS=2.5A, VGS=0V 0.65 Symbol Conditions Ratings Unit
Package Dimensions
unit (typ) 7017A-005
0.15
Electrical Connection
0.05
Cathode Drain Gate Source Anode
view
0.95
Cathode Drain Gate Source Anode SANYO CPH5
A0465-2/5
CPH5863
Switching Time Test Circuit
[MOSFET]
Test Circuit
VDD=10V
[SBD]
100mA
PW=10µs D.C.1%
100mA
10µs
CPH5863
4.0V
Drain Current,
Drain Current,
1.5V
VGS=1.0V
Drain-to-Source Voltage,
IT06404
RDS(on)
Gate-to-Source Voltage, IT06405 [MOSFET] RDS(on)
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) Static Drain-to-Source On-State Resistance, RDS(on)
1.3A
ID=0.7A
=0.7 2.5V 1.3A =4.0V
IT06406
3.0V
2.5V
[MOSFET]
VDS=10V
[MOSFET]
Gate-to-Source Voltage,
Ambient Temperature,
IT06407
Forward Transfer Admittance,
VDS=10V
[MOSFET] VGS=0V
0.01
Drain Current,
IT06408
0.01
Source Current,
10mA
IT06409
ID=1.3A RL=11.5 VOUT
Duty10%
Diode Forward Voltage,
A0465-3/5
CPH5863
1000
Time
[MOSFET] VDD=15V VGS=4V
Ciss, Coss, Crss
1000
Ciss, Coss, Crss
[MOSFET] f=1MHz
Switching Time, Time
0.01
Ciss
td(off)
td(on)
Coss
Crss
Drain Current,
IT06410
[MOSFET]
Drain-to-Source Voltage, IT06411 [MOSFET]
Gate-to-Source Voltage,
VDS=10V ID=2.5A
Drain Current,
IDP=10A
PW10µs
ID=2.5A
Operation this area limited RDS(on). Ta=25°C Single pulse Mounted ceramic board (1000mm20.8mm) 1unit
0.01 0.01
Total Gate Charge,
IT06412
Drain-to-Source Voltage,
IT11356
[MOSFET]
Allowable Power Dissipation,
IT11357
Ambient Temperature,
[SBD]
1000
Ta=12
[SBD]
Reverse Current,
Forward Current,
100°C
75°C
50°C
25°C
0.01
25°C
ID00383
ID00384
Forward Voltage,
Reverse Voltage,
A0465-4/5
CPH5863
Average Forward Power Dissipation, PF(AV)
PF(AV)
Rectangular wave =60° Rectangular wave =120° Rectangular wave =180° Sine wave =180° Rectangular wave
[SBD]
[SBD] f=1MHz
Interterminal Capacitance,
ID00385
360°
Sine wave
180°
ID00386
360°
Average Output Current,
IFSM
Reverse Voltage,
[SBD]
Surge Forward Current, IFSM(Peak)
Current waveform 50Hz sine wave
20ms
0.01
Time,
ID00387
Note usage Since CPH5863 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellctual property rights which resulted from technical information products mentioned above.
This catalog provides information August, 2007. Specifications information herein subject change without notice.
A0465-5/5

CPH5863 CPH5863 Features MOSFET N-Channel Silicon MOSFE

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