CPH3247 CPH3247 Applications Epitaxial Planar Silicon T

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CPH3247 CPH3247 Applications Epitaxial Planar Silicon T

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Ordering number ENA0400
CPH3247
CPH3247
Applications
Epitaxial Planar Silicon Transistor
High-Current Switching Applications
converters, relay drivers, lamp drivers, motor drivers, inverters.
Features
Adoption FBET, MBIT processes. Large current capacitance. collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets small slim (mounting height: 0.9mm). High allowable power dissipation.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO Tstg Mounted ceramic board (600mm2!0.8mm) Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO VCB=70V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA VCE=10V, IC=500mA VCB=10V, f=1MHz Conditions Ratings Unit
Marking
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 60506EA TB-00002342 A0400-1/4
CPH3247
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO tstg Conditions IC=1A, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA IC=10µA, IE=0A IC=100µA, RBE=0 IC=1mA, RBE= IE=10µA, IC=0A specified Test Circuit. specified Test Circuit. specified Test Circuit. Ratings 0.84 Unit
Package Dimensions
unit 7015A-003
0.15
Switching Time Test Circuit
PW=20µs D.C.1% INPUT VR10
OUTPUT
0.05
100µF 470µF VCC=40V
0.95
Base Emitter Collector SANYO CPH3
VBE=
10IB1= -10IB2=IC=0.5A
80mA
VCE=5V
Collector Current,
Collector Current,
100m
20mA
10mA
Ta=75°C
IB=0mA
IT11004
Collector-to-Emitter Voltage,
Base-to-Emitter Voltage,
-25°C
IT11005
25°C
A0400-2/4
CPH3247
1000
VCE=5V
VCE(sat)
IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat)
Ta=75°C 25°C
-25°C
Current Gain,
0.01
0.01 0.01
Collector Current,
IT11006
VCE(sat)
Collector Current,
IT11007
VBE(sat)
IB=20
IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat)
Base-to-Emitter Saturation Voltage, VBE(sat)
-25°C
75°C
25°C
0.01 0.01 0.01
Collector Current,
IT11008
VCE=10V
Collector Current,
IT11009
f=1MHz
Gain-Bandwidth Product,
Output Capacitance,
0.01
Collector Current,
IT11010
Collector-to-Base Voltage,
IT11011
ICP=4A IC=2.5A
<10µs
Collector Dissipation,
Collector Current,
0.01
0.001
Ta=25°C Single pulse Mounted ceramic board (600mm2!0.8mm)
Collector-to-Emitter Voltage,
IT11012
Ambient Temperature,
IT11003
A0400-3/4
CPH3247
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information June, 2006. Specifications information herein subject change without notice.
A0400-4/4

CPH3247 CPH3247 Applications Epitaxial Planar Silicon T

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