6LP04MH P-Channel Silicon MOSFET 6LP04MH Features

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

6LP04MH P-Channel Silicon MOSFET 6LP04MH Features

Datasheet Thumbnail

Top Searches for this datasheet

Ordering number ENA0457
6LP04MH
P-Channel Silicon MOSFET
6LP04MH
Features
General-Purpose Switching Device Applications
1.5V drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (900mm2!0.8mm) Conditions Ratings -100 -400 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) td(off) Conditions ID=-1mA, VGS=0V VDS=-60V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=-100µA VDS=-10V, ID=-50mA ID=-50mA, VGS=-4V ID=-30mA, VGS=-2.5V ID=-10mA, VGS=-1.5V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. Ratings -0.4 -1.4 Unit
Marking
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70306PE TB-00002387 A0457-1/4
6LP04MH
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Conditions VDS=-30V, VGS=-4V, ID=-100mA VDS=-30V, VGS=-4V, ID=-100mA VDS=-30V, VGS=-4V, ID=-100mA IS=-100mA, VGS=0V Ratings 0.58 0.14 0.03 -0.91 -1.5 Unit
Package Dimensions
unit (typ) 7019A-003
0.25 0.15
Switching Time Test Circuit
VDD= -30V -50mA RL=600
0.02
PW=10µs D.C.1%
VOUT
0.25 0.65
R=5k
6LP04MH
0.85
0.07
Gate Source Drain SANYO MCPH3
-100
-150
VDS= -10V
Drain Current,
Drain Current,
-0.1 -0.2
-1.5
-100
25°C
-0.5
-0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.0 -1.5 -2.0 -2.5 IT11253
Drain-to-Source Voltage,
IT11252
RDS(on)
Gate-to-Source Voltage,
RDS(on)
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
-30mA
-50mA
-10mA
-10m -50m
IT11254
Gate-to-Source Voltage,
Ambient Temperature,
IT11255
A0457-2/4
6LP04MH
VDS= -10V
Forward Transfer Admittance,
-100
VGS=0V
Source Current,
-1.0
-1.0
-100
-0.1 -0.2
-0.4
25°C
Ta=7
-0.6
-25°C
-0.8
-1.0
-1.2 IT11257
Drain Current,
IT11256
Time
Ciss, Coss, Crss
f=1MHz
Ciss
Diode Forward Voltage,
VDD= -30V VGS= Ciss, Coss, Crss
td(off)
Switching Time, Time
1000
Coss
-0.001
td(on)
-0.01
Crss
Drain Current,
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
-0.1 IT11258
IT11259
Drain-to-Source Voltage,
Gate-to-Source Voltage,
VDS= -30V -100mA Drain Current,
IDP= -400mA
-0.1
-100mA
10µs
-0.01
Operation this area limited RDS(on). Ta=25°C Single pulse Mounted ceramic board (900mm2!0.8mm)
-1.0
IT11260
-0.001 -0.1
Total Gate Charge,
Drain-to-Source Voltage,
-100 IT11261
Allowable Power Dissipation,
Ambient Temperature,
IT11262
A0457-3/4
6LP04MH
Note usage Since 6LP04MH MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information July, 2006. Specifications information herein subject change without notice.
A0457-4/4

6LP04MH P-Channel Silicon MOSFET 6LP04MH Features

Top Searches for this datasheet

Other recent searches