6LN04MH N-Channel Silicon MOSFET 6LN04MH Features

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6LN04MH N-Channel Silicon MOSFET 6LN04MH Features

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Ordering number ENA0458
6LN04MH
N-Channel Silicon MOSFET
6LN04MH
Features
General-Purpose Switching Device Applications
1.5V drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (900mm2!0.8mm) Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) td(off) Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=100mA ID=100mA, VGS=4V ID=50mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. Ratings 18.5 Unit
Marking
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71006PE TB-00002393 A0458-1/4
6LN04MH
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Conditions VDS=30V, VGS=4V, ID=200mA VDS=30V, VGS=4V, ID=200mA VDS=30V, VGS=4V, ID=200mA IS=200mA, VGS=0V Ratings 0.83 Unit
Package Dimensions
unit (typ) 7019A-003
Switching Time Test Circuit
0.25 0.15 0.02 PW=10µs D.C.1%
VDD=30V
ID=200mA RL=150 VOUT
0.25 0.65
6LN04MH
0.85
0.07
Gate Source Drain SANYO MCPH3
Rg=1.2k
6.0V 4.0V
VDS=10V
Drain Current,
Drain Current,
IT11275
Drain-to-Source Voltage,
IT11274
RDS(on)
Gate-to-Source Voltage,
RDS(on)
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
VGS=1.0V
50mA
100mA
IT11276
ID=10mA
Gate-to-Source Voltage,
Ambient Temperature,
IT11277
A0458-2/4
6LN04MH
Forward Transfer Admittance,
1000
VDS=10V
1000
VGS=0V
Source Current,
IT11278
Drain Current,
Time
VDD=30V VGS=4V
Ciss, Coss, Crss
Ciss, Coss, Crss
f=1MHz
Ciss
Diode Forward Voltage,
IT11322
Switching Time, Time
1000
td(off)
0.001
Coss
Crss
td(on)
0.01
IT11279
Drain Current,
Drain-to-Source Voltage,
IT11280
Gate-to-Source Voltage,
VDS=30V ID=200mA
Drain Current,
IDP=800mA
10µs
0.01
ID=200mA
Operation this area limited RDS(on).
0.001
Ta=25°C Single pulse Mounted ceramic board (900mm2!0.8mm)
Total Gate Charge,
IT11281
Drain-to-Source Voltage,
IT11282
Allowable Power Dissipation,
Ambient Temperature,
IT11283
A0458-3/4
6LN04MH
Note usage Since 6LN04MH MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information July, 2006. Specifications information herein subject change without notice.
A0458-4/4

6LN04MH N-Channel Silicon MOSFET 6LN04MH Features

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