2SK4062LS N-Channel Silicon MOSFET 2SK4062LS Features

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2SK4062LS N-Channel Silicon MOSFET 2SK4062LS Features

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Ordering number ENA0396B
2SK4062LS
N-Channel Silicon MOSFET
2SK4062LS
Features
General-Purpose Switching Device Applications
ON-resistance, input capacitance, ultrahigh-speed switching. High reliability (Adoption process). Attachment workability good Mica-less package. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) Avalanche Current Symbol VDSS VGSS IDc*1 IDpack*2 Tstg Tc=25°C (SANYO's ideal heat dissipation condition) Limited only maximum temperature SANYO's ideal heat dissipation condition Conditions Ratings 13.6 +150 1.03 Unit
Shows chip capability Package limited VDD=99V, L=5mH, IAV=18A L5mH, single pulse Marking K4062
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30707 TC-00000552 70306 TB-00002430 52506QB TB-00002328 A0396-1/5
2SK4062LS
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) Conditions ID=1mA, VGS=0V VDS=450V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=9A ID=9A, VGS=15V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=5V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=200V, VGS=10V, ID=18A VDS=200V, VGS=10V, ID=18A VDS=200V, VGS=10V, ID=18A IS=18A, VGS=0V Ratings ±100 0.24 2150 0.97 0.32 Unit
Package Dimensions
unit (typ) 7509-002
10.0
16.1
16.0
0.75
14.0
Gate Drain Source SANYO TO-220FI(LS)
2.55
2.55
Switching Time Test Circuit
PW=10µs D.C.0.5% ID=9A RL=22 VDD=200V
Avalanche Resistance Test Circuit
VOUT
2SK4062LS
RGS=50
2SK4062LS
A0396-2/5
2SK4062LS
Tc=25°C
-25°C
VDS=20V
25°C
Drain Current,
Drain Current,
75°C
VGS=5V
IT10970
Drain-to-Source Voltage,
IT10969
RDS(on)
Gate-to-Source Voltage,
RDS(on)
ID=9A
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Tc=75°C 25°C -25°C
IT10971
Gate-to-Source Voltage,
Case Temperature,
IT10972
VGS=0V
Forward Transfer Admittance,
VDS=10V
Source Current,
0.01
Tc=7
-25°C
25°C
IT10974
Drain Current,
1000
IT10973
Time
Ciss, Coss, Crss
f=1MHz
Diode Forward Voltage,
VDD=200V VGS=10V
Switching Time, Time
Ciss
Ciss, Coss, Crss
1000
Coss
(off)
td(on)
Crss
IT10976
Drain Current,
IT10975
Drain-to-Source Voltage,
A0396-3/5
2SK4062LS
VDS=200V ID=18A
Drain Current,
IDP=72A
IDc(*1)=18A IDpack(*2)=13.6A
Gate-to-Source Voltage,
PW10µs
Operation this area limited RDS(on).
Tc=25°C Single pulse 0.01
Shows chip capability SANYO's ideal heat dissipation condition
71000 IT10978
Total Gate Charge,
IT10977
Allowable Power Dissipation,
Drain-to-Source Voltage,
Allowable Power Dissipation,
Ambient Temperature,
IT10979
Case Temperature,
IT10980
Avalanche Energy derating factor
IT10478
Ambient Temperature,
A0396-4/5
2SK4062LS
Note usage Since 2SK4062LS MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellctual property rights which resulted from technical information products mentioned above.
This catalog provides information March, 2007. Specifications information herein subject change without notice.
A0396-5/5

2SK4062LS N-Channel Silicon MOSFET 2SK4062LS Features

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