2SJ630 P-Channel Silicon MOSFET 2SJ630 Features Ge

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2SJ630 P-Channel Silicon MOSFET 2SJ630 Features Ge

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Ordering number ENA0489
2SJ630
P-Channel Silicon MOSFET
2SJ630
Features
General-Purpose Switching Device Applications
ON-resistance. Ultrahigh-speed switching. 1.8V drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (600mm2!0.8mm) Tc=25°C Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) td(off) Conditions ID=-1mA, VGS=0V VDS=-12V, VGS=0V VGS=±6.4V, VDS=0V VDS=-6V, ID=-1mA VDS=-6V, ID=-3A ID=-3A, VGS=-4.5V ID=-1.5A, VGS=-2.5V ID=-0.3A, VGS=-1.8V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. Ratings -0.3 -1.0 Unit
Marking
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81006PA TC-00000120 A0489-1/4
2SJ630
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Conditions VDS=-6V, VGS=-4.5V, ID=-6A VDS=-6V, VGS=-4.5V, ID=-6A VDS=-6V, VGS=-4.5V, ID=-6A IS=-6A, VGS=0V Ratings -0.95 -1.5 Unit
Package Dimensions
unit (typ) 7007A-003
Switching Time Test Circuit
VDD=
View
-4.5V RL=2
PW=10µs D.C.1%
VOUT
2SJ630
0.75
Gate Drain Source
Bottom View
SANYO
-3.0
VDS=
-3.5
Drain Current,
Drain Current,
-4.5
VGS= -1.0V
-0.2 -0.4 -0.6 -0.8 -1.0
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
Drain-to-Source Voltage,
IT11389
Gate-to-Source Voltage,
IT11390
A0489-2/4
2SJ630
RDS(on)
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
-1.5A
-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0
-0.3A
-3.0A
-1.8V
-1.5
-4.5V -3.0A,
Gate-to-Source Voltage,
IT11391 -1.0 -0.1
Ambient Temperature,
IT11392
VGS=0V
Forward Transfer Admittance,
-0.01
VDS=
Source Current,
-0.6
-0.1
-1.0
Drain Current,
1000
IT11393
-0.01 -0.2
-0.4
-25°C
-0.8
-1.0
-1.2 IT11394
Time
VDD= VGS= -4.5V
Ciss, Coss, Crss
Ciss, Coss, Crss
f=1MHz
Diode Forward Voltage,
Switching Time, Time
1000
Ciss
td(off)
Coss Crss
td(on)
-0.1 -1.0 IT11395 -1.0 -0.1 IT11397 IT11396
Drain Current,
-4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
VDS=
Drain Current,
Drain-to-Source Voltage,
IDP= -24A
Gate-to-Source Voltage,
Operation this area limited RDS(on).
-0.01 -0.01
Tc=25°C Single pulse
-0.1 -1.0
Total Gate Charge,
Drain-to-Source Voltage,
IT11398
A0489-3/4
2SJ630
Allowable Power Dissipation,
Allowable Power Dissipation,
Ambient Temperature,
IT11399
Case Temperature,
IT11400
Note usage Since 2SJ630 MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information August, 2006. Specifications information herein subject change without notice.
A0489-4/4

2SJ630 P-Channel Silicon MOSFET 2SJ630 Features Ge

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