2SC6099 2SC6099 Applications Epitaxial Planar Silicon T

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2SC6099 2SC6099 Applications Epitaxial Planar Silicon T

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Ordering number ENA0435
2SC6099
2SC6099
Applications
Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
converter, relay drivers, lamp drivers, motor drivers, inverter.
Features
Adoption FBET, MBIT process. High current capacitance. collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO Tstg Tc=25°C Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Symbol ICBO IEBO Conditions VCB=80V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA Ratings Unit
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 62006EA TB-00002424 A0435-1/4
2SC6099
Continued from preceding page.
Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO tstg Conditions VCE=10V, IC=300mA VCB=10V, f=1MHz IC=1A, IB=100mA IC=1A, IB=100mA IC=10µA, IE=0A IC=100µA, RBE=0 IC=1mA, RBE= IE=10µA, IC=0A specified Test Circuit. specified Test Circuit. specified Test Circuit. 1100 Ratings Unit
Package Dimensions
unit 7518-003
Package Dimensions
unit 7003-003
0.85
0.85
Base Collector Emitter Collector SANYO
Base Collector Emitter Collector SANYO TP-FA
Switching Time Test Circuit
PW=20µs D.C.1% INPUT VR10 OUTPUT
100µF VBE= 470µF VCC=50V
10IB1= -10IB2=IC=0.5A
A0435-2/4
2SC6099
VCE=5V
60mA
Collector Current,
Collector Current,
40mA
20mA
10mA
IB=0mA
IT11126
Collector-to-Emitter Voltage,
1000
IT11125
Ta=75°C
25°C
Base-to-Emitter Voltage,
-25°C
25°C
Ta=7
VCE=5V Gain-Bandwidth Product,
VCE=10V
Current Gain,
-25°C
0.01
0.01
Collector Current,
IT11127
Collector Current,
IT11118
VCE(sat)
f=1MHz
IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat)
Output Capacitance,
0.01 0.01
Collector-to-Base Voltage,
IT11119
VBE(sat)
Collector Current,
IT11128
IB=10 Base-to-Emitter Saturation Voltage, VBE(sat)
ICP=3A IC=2A
<10µs
Collector Current,
0.01
-25°C
75°C
25°C
0.01
0.001
Ta=25°C Single Pulse
Collector Current,
IT11121
Collector-to-Emitter Voltage,
IT11129
A0435-3/4
2SC6099
ICP=3A
<10µs
Collector Current,
Collector Dissipation,
IC=2A
rati
0.01
Tc=25°C Single Pulse
Collector-to-Emitter Voltage, -17.5
IT11130
Ambient Temperature,
IT11131
15.0
Collector Dissipation,
12.5
10.0
7.50
5.00
2.50
Case Temperature,
IT11132
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information June, 2006. Specifications information herein subject change without notice.
A0435-4/4

2SC6099 2SC6099 Applications Epitaxial Planar Silicon T

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