2SC6097 2SC6097 Epitaxial Planar Silicon Transistor Hig

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2SC6097 2SC6097 Epitaxial Planar Silicon Transistor Hig

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Ordering number ENA0412
2SC6097
2SC6097
Epitaxial Planar Silicon Transistor
High-Current Switching
converter, relay drivers, lamp drivers, motor drivers, inverter.
Features
Adoption FBET, MBIT process. High current capacitance. collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO Tstg Tc=25°C Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Symbol ICBO IEBO Conditions VCB=50V, IE=0A VEB=4V, IC=0A VCE=2V, IC=100mA Ratings Unit
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70306 53006EA TB-00002348 A0412-1/4
2SC6097
Continued from preceding page.
Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO tstg Conditions VCE=10V, IC=500mA VCB=10V, f=1MHz IC=1A, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA IC=10µA, IE=0A IC=100µA, RBE=0 IC=1mA, RBE= IE=10µA, IC=0A specified Test Circuit. specified Test Circuit. specified Test Circuit. Ratings 0.84 Unit
Package Dimensions unit 7518-003
Package Dimensions unit 7003-003
0.85
0.85
Base Collector Emitter Collector SANYO
Base Collector Emitter Collector SANYO TP-FA
Switching Time Test Circuit
PW=20µs D.C.1% INPUT VR10 OUTPUT
100µF VBE= 470µF VCC=30V
10IB1= -10IB2=IC=0.5A
A0412-2/4
2SC6097
100mA 80mA 60mA
40mA 20mA 10mA
VCE=2V
Collector Current,
Collector Current,
25°C
IB=0mA
Ta=7
-25°C
IT11047
Collector-to-Emitter Voltage,
1000
IT11046
Ta=75°C 25°C
Base-to-Emitter Voltage,
VCE=2V
Gain-Bandwidth Product,
VCE=10V
Current Gain,
-25°C
0.01
0.01
Collector Current,
IT11048
Collector Current,
IT11049
VCE(sat)
f=1MHz
IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat)
Output Capacitance,
0.01
Collector-to-Base Voltage,
IT11050
0.01
VCE(sat)
Collector Current,
IT11051
VBE(sat)
IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat) Base-to-Emitter Saturation Voltage, VBE(sat)
IB=10
-25°C
75°C
0.01 0.01
25°C
0.01
Collector Current,
IT11052
Collector Current,
IT11053
A0412-3/4
2SC6097
ICP=5A <10µs
Collector Current,
Collector Current,
IC=3A
ICP=5A IC=3A
operation 100ms 10ms
<10µs
0.01
Ta=25°C Single Pulse
Collector-to-Emitter Voltage,
IT11054
0.01
Tc=25°C Single Pulse
Collector-to-Emitter Voltage,
17.5
IT11055
15.0
Collector Dissipation,
Collector Dissipation,
12.5
10.0
Ambient Temperature,
IT11056
Case Temperature,
IT11057
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information May, 2006. Specifications information herein subject change without notice.
A0412-4/4

2SC6097 2SC6097 Epitaxial Planar Silicon Transistor Hig

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