2SC6095 2SC6095 Epitaxial Planar Silicon Transistor Hig
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Ordering number ENA0411
2SC6095
2SC6095
Epitaxial Planar Silicon Transistor
High-Voltage Switching
converter, relay drivers, lamp drivers, motor drivers, inverter.
Features
Adoption FBET, MBIT process. High current capacitance. collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO Tstg Mounted ceramic board (250mm2!0.8mm) Tc=25°C Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Symbol ICBO IEBO Conditions VCB=70V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA Ratings Unit
Marking
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70306 53006EA TB-00002345 A0411-1/4
2SC6095
Continued from preceding page.
Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO tstg Conditions VCE=10V, IC=500mA VCB=10V, f=1MHz IC=1A, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA IC=10µA, IE=0A IC=100µA, RBE=0 IC=1mA, RBE= IE=10µA, IC=0A specified Test Circuit. specified Test Circuit. specified Test Circuit. Ratings Unit
Package Dimensions unit 7007A-004
View
Switching Time Test Circuit
PW=20µs D.C.1% INPUT VR10
OUTPUT
470µF VCC=40V
100µF VBE=
10IB1= -10IB2=IC=0.5A
0.75
Base Collector Emitter
Bottom View
SANYO
A0411-2/4
2SC6095
80mA 60mA
VCE=5V
20mA
Collector Current,
100m
10mA
Collector Current,
IB=0mA
IT11070
Ta=75
-25°C
25°C
IT11071
Collector-to-Emitter Voltage,
1000
Ta=75°C 25°C
-25°C
Base-to-Emitter Voltage,
1000
VCE=5V
Gain-Bandwidth Product,
VCE=10V
Current Gain,
0.01
0.01
Collector Current,
IT11072
Collector Current,
IT11073
VCE(sat)
f=1MHz
Collector-to-Emitter Saturation Voltage, VCE(sat)
IB=10
Output Capacitance,
0.01
Collector-to-Base Voltage,
IT11074
0.01
VCE(sat)
Collector Current,
IT11075
VBE(sat)
IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat) Base-to-Emitter Saturation Voltage, VBE(sat)
IB=10
-25°C
75°C
25°C
0.01
0.01 0.01
Collector Current,
IT11076
Collector Current,
IT11077
A0411-3/4
2SC6095
ICP=4A IC=2.5A 100ms <10µs
Collector Dissipation,
Tc=25°C Single Pulse
Collector Current,
IT11078
0.01
Collector-to-Emitter Voltage,
Ambient Temperature,
IT11079
Collector Dissipation,
Case Temperature,
IT11080
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information May, 2006. Specifications information herein subject change without notice.
A0411-4/4
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