2SC3807C Epitaxial Planar Silicon Transistor 2SC3807C A

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2SC3807C Epitaxial Planar Silicon Transistor 2SC3807C A

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Ordering number ENA0439
2SC3807C
Epitaxial Planar Silicon Transistor
2SC3807C
Applications
High-hFE, Frequency General-Purpose Amplifier Applications
Low-frequency general-purpose amplifiers, drivers.
Features
Large current capacity (IC=2A). Adoption MBIT process. High current gain (hFE=1000 2000). collector-to-emitter saturation voltage (VCE(sat)0.5V). High VEBO (VEBO17V).
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Tc=25°C Conditions Ratings +150 Unit
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30707LA TC-00000055 A0439-1/4
2SC3807C
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO tstg Conditions VCB=20V, IE=0A VEB=10V, IC=0A VCE=5V, IC=500mA VCE=5V, IC=1A VCE=10V, IC=0.1A VCB=10V, f=1MHz IC=1A, IB=20mA IC=1A, IB=20mA IC=10µA, IE=0A IC=1mA, RBE= IE=10µA, IC=0A specified Test Circuit. specified Test Circuit. specified Test Circuit. 0.14 0.12 1000 0.15 0.85 Ratings 2000 Unit
Package Dimensions
unit (typ) 7517-002
Switching Time Test Circuit
PW=20µs D.C.1% INPUT
OUTPUT
11.0
100µF
470µF VCC=10V
15.5
7IB1= -7IB2=IC=700mA
Emitter Collector Base SANYO TO-126LP
4.0m 3.0m
VCE=5V
2.0mA
Collector Current,
Collector Current,
20.0mA
1.0mA
25°C
IB=0mA
IT11143
Collector-to-Emitter Voltage,
IT11142
Base-to-Emitter Voltage,
0.5mA
-25°C
A0439-2/4
2SC3807C
VCE=5V
VCE=10V
Gain-Bandwidth Product,
Current Gain,
Ta=75°C 25°C
-25°C
1000
0.01
0.01
Collector Current,
IT11144
Collector Current,
IT11145
f=1MHz
VCE(sat)
IB=50
Output Capacitance,
Collector-to-Emitter Saturation Voltage, VCE(sat)
0.01 0.01
Collector-to-Base Voltage,
IT11146
VBE(sat)
Collector Current,
IT11147
IB=50
Base-to-Emitter Saturation Voltage, VBE(sat)
ICP=4A IC=2A
Collector Current,
-25°C
25°C 75°C
0.01
Collector Current,
IT11148
Collector-to-Emitter Voltage,
ITR06041
Collector Dissipation,
Collector Dissipation,
Ambient Temperature,
IT11172
Case Temperature,
IT11173
A0439-3/4
2SC3807C
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellctual property rights which resulted from technical information products mentioned above.
This catalog provides information March, 2007. Specifications information herein subject change without notice.
A0439-4/4

2SC3807C Epitaxial Planar Silicon Transistor 2SC3807C A

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