2SA2196 2SC6101 2SA2196 2SC6101 Applications Epitaxial

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

2SA2196 2SC6101 2SA2196 2SC6101 Applications Epitaxial

Datasheet Thumbnail

Top Searches for this datasheet

Ordering number ENA0462
2SA2196 2SC6101
2SA2196 2SC6101
Applications
Epitaxial Planar Silicon Transistors
Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption MBIT process. Large current capacitance. collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation.
Specifications 2SA2196
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Tc=25°C Conditions Ratings (-30)40 (-)30 (-)6 (-)5 (-)7 (-)600 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO Conditions VCB=(-)30V, IE=0A VEB=(-)4V, IC=0A VCE=(-)2V, IC=(-)500mA VCE=(-)10V, IC=(-)500mA VCB=(-)10V, f=1MHz Ratings (-)0.1 (-)0.1 (380)450 (25)20 Unit
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0406EA TC-00000206 A0462-1/5
2SA2196 2SC6101
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO tstg Conditions IC=(-)1.5A, IB=(-)30mA IC=(-)1.5A, IB=(-)75mA VCE=(-)1.5V, IB=(-)30mA IC=(-)10µA, IE=0A IC=(-)1mA, RBE= IE=(-)10µA, IC=0A specified Test Circuit. specified Test Circuit. specified Test Circuit. (-30)40 (-)30 (-)6 (50)30 (270)300 (25)15 Ratings (-170)135 (-)120 (-)0.85 (-255)200 (-)180 (-)1.2 Unit
Package Dimensions
unit (typ) 7515-002
Switching Time Test Circuit
PW=20µs D.C.1% INPUT
OUTPUT 470µF VCC=12V
11.0
100µF
VBE=
15.5
20IB1= -20IB2=IC=500mA
PNP, polarity reversed.
Emitter Collector Base SANYO TO-126
-5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
2SA2196
2SC6101
Collector Current,
Collector Current,
-50m -40mA -30mA -25mA -20mA
-15mA
40mA
30mA 25mA 20mA 15mA
10mA
-10mA
-5mA
IB=0mA
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
IB=0mA
Collector-to-Emitter Voltage,
IT11473
Collector-to-Emitter Voltage,
IT11474
A0462-2/5
2SA2196 2SC6101
-5.0 -4.5
2SA2196 VCE= Collector Current,
2SC6101 VCE=2V
Collector Current,
-4.0 -3.5 -3.0 -2.5 -2.0
Ta=7
-1.0 -0.5 -0.2 -0.4
-0.6
25°C -25°C
-1.5
-0.8
-1.0
-1.2 IT11284 1000
Ta=7 25°C -25°C
IT11291
Base-to-Emitter Voltage,
1000
Base-to-Emitter Voltage,
2SA2196 VCE= Current Gain,
2SC6101 VCE=2V
Current Gain,
Ta=75°C
25°C
Ta=75°C
25°C
-25°C
-25°C
-0.01
0.01
-0.1
-1.0
Collector Current,
IT11285
Collector Current,
IT11292
2SA2196 f=1MHz Output Capacitance,
2SC6101 f=1MHz
Output Capacitance,
-0.1
-1.0
Collector-to-Base Voltage,
1000
IT11286 1000
Collector-to-Base Voltage,
IT11293
Gain-Bandwidth Product,
Gain-Bandwidth Product,
2SA2196 VCE=
2SC6101 VCE=2V
-0.01
0.01
-0.1
-1.0
Collector Current,
IT11287
Collector Current,
IT11294
A0462-3/5
2SA2196 2SC6101
VCE(sat)
Collector-to-Emitter Saturation Voltage, VCE(sat) 2SA2196 IB=20
VCE(sat)
2SC6101 IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat)
-0.1
-0.01 -0.1
-1.0
0.01
Collector Current,
IT11288
VCE(sat)
Collector Current,
IT11295
VCE(sat)
Collector-to-Emitter Saturation Voltage, VCE(sat)
-1.0 -0.1
Collector-to-Emitter Saturation Voltage, VCE(sat)
2SA2196 IB=50
2SC6101 IB=50
-0.01 -0.1
-1.0
0.01
Collector Current,
IT11289
VBE(sat)
Collector Current,
IT11296
VBE(sat)
Base-to-Emitter Saturation Voltage, VBE(sat)
25°C
-1.0
Base-to-Emitter Saturation Voltage, VBE(sat)
2SA2196 IB=50
2SC6017 IB=50
25°C
-25°C
-25°C
75°C
75°C
-0.1
-1.0
Collector Current,
IT11290
Collector Current,
IT11297
ICP=7A IC=5A
100ms
2SA2196 2SC6101
Collector Dissipation,
Collector Current,
0.01
2SA2196 2SC6101 Tc=25°C Single pulse PNP, minus sign omitted.
IT11475
Collector-to-Emitter Voltage,
Ambient Temperature,
IT11476
A0462-4/5
2SA2196 2SC6101
2SA2196 2SC6101
Collector Dissipation,
Case Temperature,
IT11477
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information October, 2006. Specifications information herein subject change without notice.
A0462-5/5

2SA2196 2SC6101 2SA2196 2SC6101 Applications Epitaxial

Top Searches for this datasheet

Other recent searches