Drive MOSFET RSU002P03 Structure Silicon P-channel MOSFET Di

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Drive MOSFET RSU002P03 Structure Silicon P-channel MOSFET Di

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RSU002P03
Drive MOSFET
RSU002P03
Structure Silicon P-channel MOSFET Dimensions (Unit
UMT3
Features On-resistance drive
1.25
0.65 0.65 0.15
Applications Switching
Source Gate Drain
Each lead same dimensions Abbreviated symbol
Packaging specifications
Package Type RSU002P03 Code Basic ordering unit (pieces) Taping T106 3000
Inner circuit
PROTECTION DIODE BODY DIODE
Source Gate Drain
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range storage temperature
Pw10µs, Duty cycle1% Each terminal mounted recommended land
Continuous Pulsed
Symbol VDSS VGSS Tstg
Limits ±0.25 ±0.5 +150
Unit
Thermal resistance
Parameter Channel ambient
Each terminal mounted recommended land
Symbol Rth(ch-a)
Limits
Unit °C/W
Rev.A
0.1Min.
RSU002P03
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) Zero gate voltage drain current IDSS Gate threshold voltage (th) -1.0 Static drain-source on-state (on) resistance Forward transfer admittance Ciss Input capacitance Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time (on) Rise time Turn-off delay time (off) Fall time
Pulsed
Typ.
Max. -2.5
Unit
Conditions VGS=±20V, VDS=0V -1mA, VGS=0V VDS= -30V, VGS=0V VDS= -10V, -1mA -0.25A, VGS= -10V -0.15A, VGS= -4.5V -0.15A, VGS= VDS= -10V, -0.15A VDS= -10V VGS=0V f=1MHz -15V -0.15A VGS= -10V RL=100 RG=10
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter Forward voltage Symbol Min. Typ. Max. -1.2 Unit Conditions -0.1A, VGS=0V
Rev.A
RSU002P03
Electrical characteristics curves
GATE-SOURCE VOLTAGE -VGS
Ta=25°C f=1MHz VGS=0V
1000
Ta=25°C VDD= -15V VGS= -10V RG=10 Pulsed
CAPACITANCE (pF)
-250mA
RG=10
Ta=25°C VDD= -15V
Ciss
SWITCHING TIME (ns)
Pulsed
(off)
(on)
Crss Coss
0.01
DRAIN-SOURCE VOLTAGE -VDS
0.01
DRAIN CURRENT
TOTAL GATE CHARGE (nC)
Fig.1 Typical Capacitance Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
Ta=25°C Pulsed
-250mA
REVERSE DRAIN CURRENT -IDR
VDS= -10V Pulsed
VGS= Pulsed
DRAIN CURRENT
Ta=125°C 75°C 25°C -25°C
Ta=125°C 75°C 25°C -25°C
0.01
-125mA
0.001
0.01
GATE-SOURCE VOLTAGE -VGS
GATE-SOURCE VOLTAGE -VGS
SOURCE-DRAIN VOLTAGE -VSD
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance Gate-Source Voltage
Fig.6 Reverse Drain Current Source-Drain Voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
Ta=125°C 75°C 25°C -25°C
Ta=125°C 75°C 25°C -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
VGS= -10V Pulsed
VGS= -4.5V Pulsed
VGS= Pulsed
Ta=125°C 75°C 25°C -25°C
0.01
0.01
0.01
DRAIN CURRENT
DRAIN CURRENT
DRAIN CURRENT
Fig.7 Static Drain-Source On-State Resistance Drain current
Fig.8 Static Drain-Source On-State Resistance Drain current
Fig.9 Static Drain-Source On-State Resistance Drain current
Rev.A
RSU002P03
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
Ta=25°C Pulsed
VGS= -4.0V -4.5V -10V
0.01
DRAIN CURRENT
Fig.10 Static Drain-Source On-State Resistance Drain current
Rev.A
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.1

Drive MOSFET RSU002P03 Structure Silicon P-channel MOSFET Di

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