REJ03G1360-0200 Rev.2.00 2007 on-resistance leakage current High

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REJ03G1360-0200 Rev.2.00 2007 on-resistance leakage current High

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RJK5015DPK
REJ03G1360-0200 Rev.2.00 2007
on-resistance leakage current High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
Gate Drain (Flange) Source
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel case thermal impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C STch 25°C, 150°C Symbol VDSS VGSS (pulse)Note1 (pulse)Note1 IAPNote3 EARNote3 Note2 ch-c Tstg Ratings 0.833 +150 Unit °C/W
REJ03G1360-0200 Rev.2.00 2007 Page
RJK5015DPK
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Gate drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) 0.21 2600 0.96 ±0.1 0.24 1.60 Unit Test conditions 12.5 Note4 12.5 Note4 diF/dt A/µs
REJ03G1360-0200 Rev.2.00 2007 Page
RJK5015DPK
Main Characteristics
Power Temperature Derating
1000
Maximum Safe Operation Area
25°C
Channel Dissipation
Drain Current
(1shot) Operation this area limited RDS(on)
Operation 25°C)
0.01
1000
Case Temperature (°C)
Drain Source Voltage
Typical Output Characteristics
Pulse Test
Typical Transfer Characteristics
Pulse Test
Drain Current
Drain Current
75°C 25°C -25°C
Drain Source Voltage Static Drain Source State Resistance Drain Current
Drain Source State Resistance RDS(on)
Gate Source Voltage Static Drain Source State Resistance Temperature
12.5
Static Drain Source State Resistance RDS(on)
0.05
Pulse Test
0.02 0.01 Pulse Test 1000
Drain Current
Case Temperature (°C)
REJ03G1360-0200 Rev.2.00 2007 Page
RJK5015DPK
Body-Drain Diode Reverse Recovery Time
1000 100000 30000 Ciss
Typical Capacitance Drain Source Voltage
Reverse Recovery Time (ns)
1000 25°C
Capacitance (pF)
10000 3000 1000
Coss
Crss
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Reverse Drain Current Source Drain Voltage
Pulse Test
Drain Source Voltage
Gate Source Voltage
Reverse Drain Current
Gate Charge
(nC)
Source Drain Voltage
Gate Source Cutoff Voltage Case Temperature
Gate Source Cutoff Voltage VGS(off)
Case Temperature
(°C)
REJ03G1360-0200 Rev.2.00 2007 Page
RJK5015DPK
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.833°C/W, 25°C
0.05
0.03
0.02
0.01
Pulse Width
Switching Time Test Circuit
Monitor D.U.T. Vout Vout Monitor
Waveform
td(on)
td(off)
REJ03G1360-0200 Rev.2.00 2007 Page
RJK5015DPK
Package Dimensions
Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P TO-3PV MASS[Typ.] 5.0g
Unit:
15.6
14.9
19.9
18.0
5.45
5.45
Ordering Information
Part RJK5015DPK-00-T0 Quantity (Tube) Shipping Container
REJ03G1360-0200 Rev.2.00 2007 Page
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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2007. Renesas Technology Corp., rights reserved. Printed Japan.
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REJ03G1360-0200 Rev.2.00 2007 on-resistance leakage current High

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