REJ03G1314-0200 Rev.2.00 2007 on-resistance leakage current High

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REJ03G1314-0200 Rev.2.00 2007 on-resistance leakage current High

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RJK1525DPS
REJ03G1314-0200 Rev.2.00 2007
on-resistance leakage current High speed switching
Outline
RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM)
Gate Drain Source
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel case thermal impedance Channel temperature Storage temperature Notes: duty cycle Value 25°C STch 25°C, 150°C Symbol VDSS VGSS (pulse) Note1 (pulse) IAPNote3 EARNote3 Note2 ch-c Tstg
Note1
Ratings 21.6 4.17 +150
Unit °C/W
Rev.2.00 2007 page
RJK1525DPS
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Zero gate voltage drain current Gate source leak current Gate source cutoff voltage Forward transfer admittance Static drain source state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate source charge Gate drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) td(off) 0.089 0.88 ±0.1 0.110 1.40 Unit Test conditions Note4 Note4 Note4 diF/dt A/µs
Rev.2.00 2007 page
RJK1525DPS
Main Characteristics
Power Temperature Derating
1000
Maximum Safe Operation Area
Channel Dissipation
Drain Current
hot) rati
Operation this RDS(on) 25°C
area limited 0.03
0.01
1000
Case Temperature (°C)
Drain Source Voltage
Typical Output Characteristics
Pulse Test
Typical Transfer Characteristics
Pulse Test
Drain Current
Drain Current
75°C 25°C -25°C
Drain Source Voltage
Gate Source Voltage
Drain Source Saturation Voltage Gate Source Voltage
Drain Source Saturation Voltage VDS(on) Drain Source State Resistance RDS(on)
Pulse Test
Static Drain Source State Resistance Drain Current
0.05
12.5
0.02 0.01 Pulse Test 1000
Gate Source Voltage
Drain Current
Rev.2.00 2007 page
RJK1525DPS
Static Drain Source State Resistance Temperature Forward Transfer Admittance Drain Current
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance |yfs|
Pulse Test 75°C
Pulse Test
-25°C
25°C
12.5
Case Temperature (°C)
Drain Current Typical Capacitance Drain Source Voltage
100000 30000
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time (ns)
1000 25°C 1000
Capacitance (pF)
10000 3000 1000 Crss Coss Ciss
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Switching Characteristics
Drain Source Voltage
Gate Source Voltage
1000
Switching Time (ns)
duty td(off) td(on)
Gate Charge (nC)
Drain Current
Rev.2.00 2007 page
RJK1525DPS
Reverse Drain Current Source Drain Voltage
Gate Source Cutoff Voltage Case Temperature
Reverse Drain Current
Pulse Test
Gate Source Cutoff Voltage VGS(off)
Source Drain Voltage
Case Temperature (°C)
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance Pulse Width
0.03 0.01 0.003
25°C
0.05
0.02 0.01
4.17°C/W, 25°C
0.001
Pulse Width Switching Time Test Circuit
Monitor D.U.T. Vout Monitor
Waveform
Vout td(on) td(off)
Rev.2.00 2007 page
RJK1525DPS
Package Dimensions
Package Name TO-220CFM JEITA Package Code RENESAS Code PRSS0003AE-A Previous Code TO-220CFM TO-220CFMV MASS[Typ.] 1.9g
Unit:
10.0
2.54
2.54
Ordering Information
Part RJK1525DPS-00-T2 Quantity (Tube) Shipping Container
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.2.00 2007 page
13.6
1.15
12.0
15.0
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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RENESAS SALES OFFICES
Refer latest detailed information. Renesas Technology America, Inc. Holger Way, Jose, 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> 2715-2888, Fax: <886> 2713-2999 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #06-10, Keppel Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 796-3115, Fax: <82> 796-2145
http://www.renesas.com
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2007. Renesas Technology Corp., rights reserved. Printed Japan.
Colophon .7.0

REJ03G1314-0200 Rev.2.00 2007 on-resistance leakage current High

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