MUR8100E Preferred Device SWITCHMODEt Power Rectifiers Ultra

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MUR8100E Preferred Device SWITCHMODEt Power Rectifiers Ultra

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MUR8100E, MUR880E
MUR8100E Preferred Device
SWITCHMODEt Power Rectifiers
Ultrafast "E'' Series with High Reverse Energy Capability
MUR8100 MUR880E diodes designed switching power supplies, inverters free wheeling diodes.
Features http://onsemi.com
Avalanche Energy Guaranteed Excellent Protection Against Voltage Transients Switching
Inductive Load Circuits Ultrafast Nanosecond Recovery Time 175°C Operating Junction Temperature Popular TO-220 Package Epoxy Meets 0.125 Forward Voltage Leakage Current High Temperature Glass Passivated Junction Reverse Voltage 1000 Pb-Free Packages Available*
ULTRAFAST RECTIFIERS 1000
TO-220AC CASE 221B
Mechanical Characteristics:
Case: Epoxy, Molded Weight: Grams (Approximately) Finish: External Surfaces Corrosion Resistant Terminal
Leads Readily Solderable
MARKING DIAGRAM
Lead Temperature Soldering Purposes:
260°C Max. Seconds
U8xxxE
U8xxxE
Assembly Location Year Work Week Pb-Free Package Device Code Diode Polarity
ORDERING INFORMATION
Device MUR8100E MUR8100EG MUR880E MUR880EG *For additional information Pb-Free strategy soldering details, please download Semiconductor Soldering Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2006
Package TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free)
Shipping Units Rail Units Rail Units Rail Units Rail
Preferred devices recommended choices future best overall value.
February, 2006 Rev.
Publication Order Number: MUR8100E/D
MUR8100E, MUR880E
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage Blocking Voltage Average Rectified Forward Current (Rated 150°C) Total Device Peak Repetitive Forward Current (Rated Square Wave, kHz, 150°C) Non-Repetitive Peak Surge Current (Surge Applied Rated Load Conditions Halfwave, Single Phase, Operating Junction Storage Temperature Range Symbol VRRM VRWM IF(AV) IFSM Tstg Value Unit 1000 +175
MUR880E MUR8100E
Maximum ratings those values beyond which device damage occur. Maximum ratings applied device individual stress limit values (not normal operating conditions) valid simultaneously. these limits exceeded, device functional operation implied, damage occur reliability affected.
THERMAL CHARACTERISTICS
Characteristic Maximum Thermal Resistance, Junction-to-Case Symbol RqJC Value Unit °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Maximum Instantaneous Forward Voltage (Note 150°C) 25°C) Maximum Instantaneous Reverse Current (Note (Rated Voltage, 100°C) (Rated Voltage, 25°C) Maximum Reverse Recovery Time di/dt A/ms) IREC 0.25 Controlled Avalanche Energy (See Test Circuit Figure Pulse Test: Pulse Width Duty Cycle 2.0%. Symbol WAVAL Value Unit
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MUR8100E, MUR880E
INSTANTANEOUS FORWARD CURRENT (AMPS) 10,000 1000 REVERSE CURRENT 100°C
curves shown typical highest voltage device voltage grouping. Typical reverse current lower voltage selections estimated from these same curves sufficiently below rated
175°C 150°C
IF(AV) AVERAGE FORWARD CURRENT (AMPS) 175°C 100°C 25°C
25°C 1000
0.01 REVERSE VOLTAGE (VOLTS)
Figure Typical Reverse Current*
CASE TEMPERATURE (°C) SQUARE WAVE RATED APPLIED
INSTANTANEOUS VOLTAGE (VOLTS)
Figure Typical Forward Voltage
Figure Current Derating, Case
PF(AV) AVERAGE POWER DISSIPATION (WATTS)
F(AV) AVERAGE FORWARD CURRENT (AMPS)
AMBIENT TEMPERATURE (°C) SQUARE WAVE SQUARE WAVE RqJA 16°C/W RqJA 60°C/W Heat Sink)
IF(AV), AVERAGE FORWARD CURRENT (AMPS) 175°C SQUARE WAVE
Figure Current Derating, Ambient
Figure Power Dissipation
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MUR8100E, MUR880E
+VDD COIL BVDUT MERCURY SWITCH
Figure Test Circuit
Figure Current-Voltage Waveforms
unclamped inductive switching circuit shown Figure used demonstrate controlled avalanche capability "E'' series Ultrafast rectifiers. mercury switch used instead electronic switch simulate noisy environment when switch being opened. When closed current inductor ramps linearly; energy stored coil. switch opened voltage across diode under test begins rise rapidly, di/dt effects, when this induced voltage reaches breakdown voltage diode, clamped BVDUT diode begins conduct full load current which starts decay linearly through diode, goes zero solving loop equation point time when opened; calculating energy that transferred diode shown that total energy transferred equal energy stored inductor plus finite amount energy from power supply while diode
EQUATION (1): AVAL
500V 50mV
breakdown (from minus losses finite component resistances. Assuming component resistive elements small Equation approximates total energy transferred diode. seen from this equation that voltage compared breakdown voltage device, amount energy contributed supply during breakdown small total energy assumed nearly equal energy stored coil during time when closed, Equation (2). oscilloscope picture Figure shows MUR8100E this test circuit conducting peak current ampere breakdown voltage 1300 using Equation energy absorbed MUR8100E approximately mjoules. Although recommended design this condition, "E'' series provides added protection against those unforeseen transient viruses that produce unexplained random failures unfriendly environments.
20ms VERT CHANNEL AMPS/DIV.
EQUATION (2): AVAL
CHANNEL VDUT VOLTS/DIV.
TIME BASE: ms/DIV. ACQUISITIONS SAVEREF SOURCE 217:33 STACK
Figure Current-Voltage Waveforms
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MUR8100E, MUR880E
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.07 0.05 0.03 0.02 0.01 0.01 0.02 SINGLE PULSE 0.05 TIME (ms) 0.05 0.01 DUTY CYCLE, t1/t2 P(pk) ZqJC(t) r(t) RqJC RqJC 1.5°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) ZqJC(t)
1000
Figure Thermal Response
1000 25°C CAPACITANCE (pF)
REVERSE VOLTAGE (VOLTS)
Figure Typical Capacitance
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MUR8100E, MUR880E
PACKAGE DIMENSIONS
TO-220 TWO-LEAD CASE 221B-04 ISSUE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. INCHES 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.190 0.210 0.110 0.130 0.018 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS 15.11 15.75 9.65 10.29 4.06 4.82 0.64 0.89 3.61 3.73 4.83 5.33 2.79 3.30 0.46 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27
SWITCHMODE trademark Semiconductor Components Industries, LLC.
Semiconductor registered trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. "Typical" parameters which provided SCILLC data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. SCILLC does convey license under patent rights rights others. SCILLC products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure SCILLC product could create situation where personal injury death occur. Should Buyer purchase SCILLC products such unintended unauthorized application, Buyer shall indemnify hold SCILLC officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that SCILLC negligent regarding design manufacture part. SCILLC Equal Opportunity/Affirmative Action Employer. This literature subject applicable copyright laws resale manner.
PUBLICATION ORDERING INFORMATION
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MUR8100E/D

MUR8100E Preferred Device SWITCHMODEt Power Rectifiers Ultra

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