AH278 integrated Hall sensor with output driver designed electronic co
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Data Sheet HIGH VOLTAGE HALL EFFECT LATCH General Description
AH278 integrated Hall sensor with output driver designed electronic commutation brushless motor applications. device includes onchip Hall sensor magnetic sensing, amplifier that amplifies Hall voltage, Schmitt trigger provide switching hysteresis noise rejection complementary open-collector drivers sinking large load current. also includes internal band-gap regulator which used provide bias voltage internal circuits allows wide operating supply voltage ranges. Placing device variable magnetic field, magnetic flux density larger than threshold BOP, will turned (on) will turned high (off). This output state held until magnetic flux density reverses falls below BRP, then causes turned high (off) turned (on). AH278 available TO-94 (SIP-4L) package.
AH278
On-Chip Hall Sensor Supply Voltage 500mA (avg) Output Sink Current Build Protection Diode Reverse Power Connecting -20oC 85oC Operating Temperature Profile TO-94 (SIP-4L) Package Build Over Temperature Protection Function Rating: 300V(Machine Model)
Applications
12V/24V Dual-Coil Brushless Motor/Fan Power Supply Switchboard Communications Facilities Industrial Equipment
TO-94
Figure Package Type AH278
Feb. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Configuration
Package (TO-94)
AH278
Figure Configuration AH278 (Top View)
Description
Number Name Supply voltage Output Output Ground Function
Feb. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Functional Block Diagram
AH278
Regulator
Over-Temperature Protection
Hall Sensor
Amplifier
Schmitt Trigger
Output Driver
Figure Functional Block Diagram AH278
Ordering Information
AH278 Circuit Type Package TO-94 (SIP-4L) Lead Free Magnetic Characteristics 70Gauss 100Gauss
Package TO-94
Temperature Range
Part Number AH278Z4-AE1 AH278Z4-BE1
Marking AH278Z4-E1 AH278Z4-E1
Packing Type Bulk Bulk
Semiconductor's Pb-free products, designated with "E1" suffix part number, RoHS compliant.
Feb. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Absolute Maximum Ratings (Note
(TA=25oC)
Parameter Supply Voltage Reverse Protection Voltage Magnetic Flux Density Continuous Output Current Hold Peak (start Power Dissipation atmosphere Thermal Resistance package case Storage Temperature (Machine Model) TSTG Symbol VRCC Value Unlimited (Note Unit Gauss
oC/W oC/W
AH278
Note Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated under "Recommended Operating Conditions" implied. "Absolute Maximum Ratings" extended period affect device reliability. Note Continuos output current 300mA 85oC.
Recommended Operating Conditions
Parameter Supply Voltage Operating Ambient Temperature Symbol Unit
Feb. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Electrical Characteristics
(TA=25oC, VCC=24V, unless otherwise specified)
Parameter Supply Voltage Output Saturation Voltage Output Saturation Voltage Output Leakage Current Supply Current Output Rise Time Output Fall Time Switch Time Differential Output Zener Breakdown Voltage Symbol VSAT1 VSAT2 Test Condition VCC=5V, IO=100mA IO=500mA IO=300mA VDO,VDOB=24V VCC=24V, Output Open RL=820, CL=20pF RL=820, CL=20pF RL=820, CL=20pF 0.25 12.5 Unit
AH278
Magnetic Characteristics
(TA=25oC)
Parameter Operating Point Symbol BHYS Grade Releasing Point Hysteresis -100 Unit Gauss Gauss Gauss Gauss Gauss
Off-state High
Turn
BHYS
Turn
VSAT On-state
Magnetic Flux Density (Gauss)
Feb. 2007 Rev. Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Magnetic Characteristics (Continued) AH278
+24V
AH278
Marking Side
(VOUT1) (VOUT2)
20pF 20pF
Figure Basic Test Circuit
VSAT
VSAT
Magnetic Flux Density (Gauss)
Magnetic Flux Density (Gauss)
Figure Magnetic Flux Density
Figure VDOB Magnetic Flux Density
Feb. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Typical Performance Characteristics AH278
(mA)
TA=25
BOP/BRP/BHYS (GS)
BHYS TA=25
Figure
Figure BOP/BRP/BHYS
BOP/BRP/BHYS (GS)
(mW)
BHYS VCC=24V
Figure BOP/BRP/BHYS Ambient Temperature
Figure Ambient Temperature
Feb. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Typical Performance Characteristics (Continued) AH278
(mA)
VCC=4V VCC=14V VCC=24V
VSAT (mV)
VCC=24V IO=300mA
Figure Ambient Temperature
Figure VSAT Ambient Temperature
Feb. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Typical Applications
AH278
AH278
COIL1
COIL2
(VCC-5.5V)/16mA, 0.5W (Note Zener diode, 2*VCCVZ60V
Figure Typical Application Circuit with
Note Recommended different
1.1k 1.2k 1.2k 1.3k 1.3k
Feb. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE HALL EFFECT LATCH Mechanical Dimensions TO-94
0.500(0.020) 0.700(0.028) 1.400(0.055) 1.800(0.071) 4.980(0.196) 5.280(0.208) 1.850(0.073) 0.360(0.014) 0.510(0.020) 3.780(0.149) 4.080(0.161) 45°TYP
AH278
Unit: mm(inch)
0.700(0.028) 0.900(0.035)
1.250(0.050) Hall Sensor Location 0.380(0.015) 0.550(0.022)
0.360(0.014) 0.500(0.020)
14.900(0.587) 15.300(0.602)
1.270(0.050) 3.710(0.146) 3.910(0.154)
Feb. 2007 Rev.
Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE Semiconductor Manufacturing Limited reserves right make changes without further notice products specifications herein. Semiconductor Manufacturing Limited does assume responsibility products particular purpose, does Semiconductor Manufacturing Limited assume liability arising application products circuits. Semiconductor Manufacturing Limited does convey license under patent rights other rights rights others.
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Semiconductor Manufacturing Limited
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REGIONAL SALES OFFICE
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