AH276 integrated Hall sensor with output driver designed electronic co
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Data Sheet COMPLEMENTARY OUTPUT HALL EFFECT LATCH General Description
AH276 integrated Hall sensor with output driver designed electronic commutation brushless motor applications. device includes onchip Hall sensor magnetic sensing, amplifier that amplifies Hall voltage, Schmitt trigger provide switching hysteresis noise rejection, temperature compensation circuit compensate temperature drift Hall sensitivity complementary open-collector drivers sinking large load current. also includes internal band-gap regulator which used provide bias voltage internal circuits. Placing device variable magnetic field, magnetic flux density larger than threshold BOP, will turned (on) will turned high (off). This output state held until magnetic flux density reverses falls below BRP, then causes turned high (off) turned (on). AH276 available TO-94 (SIP-4L) package.
AH276
On-Chip Hall Sensor 3.5V Supply Voltage 350mA (avg) Output Sink Current Reversed Supply Voltage Protection Build Over Temperature Protection Function -20oC 85oC Operating Temperature Profile TO-94 (SIP-4L) Package Rating: 300V (Machine Model)
Applications
Dual-Coil Brushless Motor Dual-Coil Brushless Revolution Counting Speed Measurement
TO-94
Figure Package Type AH276
Apr. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet COMPLEMENTARY OUTPUT HALL EFFECT LATCH Configuration
Package (TO-94)
AH276
Figure Configuration AH276 (Front View)
Description
Number Name Supply voltage Output Output Ground Function
Apr. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet COMPLEMENTARY OUTPUT HALL EFFECT LATCH Functional Block Diagram
AH276
Regulator
Temperature Compensation
Hall Sensor
Amplifier
Schmitt Trigger
Output Driver
Over Temperature Protection
Figure Functional Block Diagram AH276
Ordering Information
AH276 Circuit Type Package TO-94 (SIP-4L) Lead Free Magnetic Characteristics 50Gauss 70Gauss 100Gauss
Package TO-94
Temperature Range
Part Number AH276Z4-AE1 AH276Z4-BE1 AH276Z4-CE1
Marking AH276Z4-E1 AH276Z4-E1 AH276Z4-E1
Packing Type Bulk Bulk Bulk
Semiconductor's Pb-free products, designated with "E1" suffix part number, RoHS compliant.
Apr. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet COMPLEMENTARY OUTPUT HALL EFFECT LATCH Absolute Maximum Ratings (Note
(TA=25oC)
Parameter Supply Voltage Reverse Protection Voltage Magnetic Flux Density Continuous Output Current Hold Peak (start Power Dissipation atmosphere Thermal Resistance package case Storage Temperature (Machine Model) (Human Body Model) TSTG Symbol VRCC Value Unlimited 2500 Unit Gauss
oC/W oC/W
AH276
Note Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated under "Recommended Operating Conditions" implied. "Absolute Maximum Ratings" extended period affect device reliability.
Recommended Operating Conditions
(TA=25oC)
Parameter Supply Voltage Ambient Temperature Symbol Unit
Apr. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet COMPLEMENTARY OUTPUT HALL EFFECT LATCH Electrical Characteristics
(TA=25oC, VCC=14V, unless otherwise specified)
Parameter Output Saturation Voltage Output Leakage Current Supply Current Output Rise Time Output Fall Time Switch Time Differential Output Zener Breakdown Voltage Thermal Protection Temperature Thermal Protection Hysteresis Symbol VSAT Test Condition VCC=3.5V, IO=100mA IO=350mA VCE=16V VCC=16V, Output Open RL=820, CL=20pF RL=820, CL=20pF RL=820, CL=20pF 0.35 Unit
AH276
Magnetic Characteristics
(TA=25oC)
Parameter Operating Point Symbol Grade Releasing Point Hysteresis BHYS
Unit Gauss Gauss Gauss Gauss Gauss Gauss
-100
Gauss
Off-state High
Turn
Turn
On-state
Magnetic Flux Density (Gauss)
Apr. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet COMPLEMENTARY OUTPUT HALL EFFECT LATCH Magnetic Characteristics (Continued) AH276
+14V
AH276
Marking Side
(VOUT1) (VOUT2)
20pF 20pF
Figure Basic Test Circuit
VSAT
VSAT
Magnetic Flux Density (Gauss)
Magnetic Flux Density (Gauss)
Figure Magnetic Flux Density
Figure VDOB Magnetic Flux Density
Apr. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet COMPLEMENTARY OUTPUT HALL EFFECT LATCH Typical Performance Characteristics AH276
BOP/BRP/BHYS (Gauss)
(mA)
BHYS Ta=25
Ta=-25 Ta=-0 Ta=+25 Ta=+85
Figure
Figure BOP/BRP/BHYS
BOP/BRP/BHYS (Gauss)
(mW)
BHYS TA=+25
Figure BOP/BRP/BHYS Ambient Temperature
Figure Ambient Temperature
Apr. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet COMPLEMENTARY OUTPUT HALL EFFECT LATCH Typical Performance Characteristics (Continued)
6005
AH276
VCC=3.5V VCC=14V VCC=20V
IO=100mA IO=200mA IO=300mA IO=350mA IO=400mA
VSAT(mV)
(mA)
Figure Ambient Temperature
Figure VSAT Ambient Temperature
Typical Applications
AH276
COIL1 COIL2
2.2µF
2.2µF
Figure Typical Application Circuit
Apr. 2007 Rev.
Semiconductor Manufacturing Limited
Data Sheet COMPLEMENTARY OUTPUT HALL EFFECT LATCH Mechanical Dimensions TO-94 Unit: mm(inch) AH276
0.500(0.020) 0.700(0.028) 1.520(0.059) 1.720(0.067)
3.780(0.149) 4.080(0.161)
45°TYP
0.700(0.028) 0.900(0.035)
4.980(0.196) 5.280(0.208) 1.850(0.073)
0.360(0.014) 0.510(0.020)
1.250(0.050) 0.380(0.015) 0.550(0.022) 3.450(0.136) 3.750(0.148)
Package Sensor Location
0.360(0.014) 0.500(0.020)
14.900(0.587) 15.300(0.602)
1.270(0.050) 3.710(0.146) 3.910(0.154)
Apr. 2007 Rev.
Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE Semiconductor Manufacturing Limited reserves right make changes without further notice products specifications herein. Semiconductor Manufacturing Limited does assume responsibility products particular purpose, does Semiconductor Manufacturing Limited assume liability arising application products circuits. Semiconductor Manufacturing Limited does convey license under patent rights other rights rights others.
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