2N6043 2N6045 Preferred Devices Plastic Medium-Power Complementar

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2N6043 2N6045 Preferred Devices Plastic Medium-Power Complementar

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2N6040, 2N6042, 2N6043, 2N6045
2N6043 2N6045 Preferred Devices
Plastic Medium-Power Complementary Silicon Transistors
Plastic medium-power complementary silicon transistors designed general-purpose amplifier low-speed switching applications.
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High Current Gain 2500 (Typ) Collector-Emitter Sustaining Voltage mAdc
VCEO(sus) (Min) 2N6040, 2N6043 (Min) 2N6042, 2N6045 Collector-Emitter Saturation Voltage VCE(sat) (Max) 2N6043,44 (Max) 2N6042, 2N6045 Monolithic Construction with Built-In Base-Emitter Shunt Resistors Epoxy Meets 0.125 Ratings: Human Body Model, 8000 Machine Model, Pb-Free Packages Available*
DARLINGTON, AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS, WATTS
TO-220AB CASE 221A-09 STYLE
MAXIMUM RATINGS (Note
Rating Collector-Emitter Voltage Symbol VCEO Value Unit 2N6040 2N6043 2N6042 2N6045 Collector-Base Voltage 2N6040 2N6043 2N6042 2N6045 Emitter-Base Voltage Collector Current Base Current Continuous Peak mAdc W/°C Total Power Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range 0.60 Tstg +150 Stresses exceeding Maximum Ratings damage device. Maximum Ratings stress ratings only. Functional operation above Recommended Operating Conditions implied. Extended exposure stresses above Recommended Operating Conditions affect device reliability. Indicates JEDEC Registered Data. *For additional information Pb-Free strategy soldering details, please download Semiconductor Soldering Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2006
MARKING DIAGRAM
2N604xG AYWW
2N604x Device Code Assembly Location Year Work Week Pb-Free Package
ORDERING INFORMATION
detailed ordering shipping information package dimensions section page this data sheet. Preferred devices recommended choices future best overall value.
May, 2006 Rev.
Publication Order Number: 2N6040/D
*Indicates JEDEC Registered Data. DYNAMIC CHARACTERISTICS CHARACTERISTICS CHARACTERISTICS
*ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
THERMAL CHARACTERISTICS
Small-Signal Current Gain Adc, Vdc, kHz)
Output Capacitance (VCB Vdc, MHz)
Small Signal Current Gain Adc, Vdc, MHz)
Base-Emitter Voltage Adc, Vdc)
Base-Emitter Saturation Voltage Adc, mAdc)
Collector-Emitter Saturation Voltage Adc, mAdc) Adc, mAdc) Adc, Adc)
Current Gain Adc, Vdc) Adc, Vdc) Adc, Vdc)
Emitter Cutoff Current (VBE Vdc,
Collector Cutoff Current (VCB Vdc, (VCB Vdc,
Collector Cutoff Current (VCE Vdc, VBE(off) Vdc) (VCE Vdc, VBE(off) Vdc) (VCE Vdc, VBE(off) Vdc, 150°C) (VCE Vdc, VBE(off) Vdc, 150°C) (VCE Vdc, VBE(off) Vdc, 150°C)
Collector Cutoff Current (VCE Vdc, (VCE Vdc,
Collector-Emitter Sustaining Voltage mAdc,
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
2N6040, 2N6042, 2N6043, 2N6045
Characteristic
Characteristic
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2N6040, 2N6043, 2N6042, 2N6045 Types 2N6040, 2N6043, 2N6042, 2N6045 Types 2N6040, 2N6043 2N6042, 2N6045 2N6040, 2N6043 2N6041, 2N6044 2N6042, 2N6045 2N6040, 2N6043 2N6042, 2N6045 2N6040, 2N6043 2N6042, 2N6045 2N6040, 2N6043 2N6042, 2N6045 2N6040/2N6042 2N6043/2N6045 VCEO(sus) Symbol Symbol VCE(sat) VBE(sat) VBE(on) ICBO ICEO IEBO ICEX |hfe| 1000 1000 1.67 20.000 20,000
mAdc
°C/W
°C/W
Unit
Unit
2N6040, 2N6042, 2N6043, 2N6045
POWER DISSIPATION (WATTS)
TEMPERATURE (°C)
Figure Power Derating
VARIED OBTAIN DESIRED CURRENT LEVELS MUST FAST RECOVERY TYPE, 1N5825 USED ABOVE MSD6100 USED BELOW
approx +8.0 approx DUTY CYCLE 1.0% +4.0
disconnected test circuit reverse polarities
TIME
SCOPE
IC/IB 25°C 0.07 VBE(off) 0.05 COLLECTOR CURRENT (AMP)
Figure Switching Times Equivalent Circuit
Figure Switching Times
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
P(pk) qJC(t) r(t) 1.67°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) qJC(t) DUTY CYCLE, t1/t2
0.07 0.05 0.03 0.02
0.05 0.02 SINGLE PULSE 0.01
0.01 0.01
0.02 0.03
0.05
TIME PULSE WIDTH (ms)
1000
Figure Thermal Response
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2N6040, 2N6042, 2N6043, 2N6045
COLLECTOR CURRENT (AMP) 150°C BONDING WIRE LIMITED THERMALLY LIMITED 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 2N6040, 2N6043 2N6045 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.05
0.02
There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. data Figure based TJ(pk) 150°C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided TJ(pk) 150°C. TJ(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown.
Figure Active-Region Safe Operating Area
10,000 hfe, SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 FREQUENCY (kHz) 1000 25°C CAPACITANCE (pF)
25°C
REVERSE VOLTAGE (VOLTS)
Figure Small-Signal Current Gain
Figure Capacitance
2N6040, 2N6042
20,000 10,000 CURRENT GAIN 7000 5000 3000 2000 1000 20,000
2N6043, 2N6045
10,000 CURRENT GAIN 7000 5000 3000 2000 25°C 1000 150°C
150°C 25°C
COLLECTOR CURRENT (AMP)
COLLECTOR CURRENT (AMP)
Figure Current Gain
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2N6040, 2N6042, 2N6043, 2N6045
COLLECTOR-EMITTER VOLTAGE (VOLTS) COLLECTOR-EMITTER VOLTAGE (VOLTS) 25°C 25°C
BASE CURRENT (mA)
BASE CURRENT (mA)
Figure Collector Saturation Region
25°C VOLTAGE (VOLTS) VOLTAGE (VOLTS)
25°C
VBE(sat) IC/IB VCE(sat) IC/IB
VBE(sat) IC/IB VCE(sat) IC/IB
7.010
COLLECTOR CURRENT (AMP)
COLLECTOR CURRENT (AMP)
Figure "On" Voltages
ORDERING INFORMATION
Device 2N6040 2N6040G 2N6042 2N6042G 2N6043 2N6043G 2N6045 2N6045G Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) Units Rail TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) Shipping
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2N6040, 2N6042, 2N6043, 2N6045
PACKAGE DIMENSIONS
TO-220 CASE 221A-09 ISSUE
SEATING PLANE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. DIMENSION DEFINES ZONE WHERE BODY LEAD IRREGULARITIES ALLOWED. STYLE INCHES 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.020 0.055 0.235 0.255 0.000 0.050 0.045 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 0.508 1.39 5.97 6.47 0.00 1.27 1.15 2.04
Semiconductor registered trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. "Typical" parameters which provided SCILLC data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. SCILLC does convey license under patent rights rights others. SCILLC products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure SCILLC product could create situation where personal injury death occur. Should Buyer purchase SCILLC products such unintended unauthorized application, Buyer shall indemnify hold SCILLC officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that SCILLC negligent regarding design manufacture part. SCILLC Equal Opportunity/Affirmative Action Employer. This literature subject applicable copyright laws resale manner.
PUBLICATION ORDERING INFORMATION
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2N6040/D

2N6043 2N6045 Preferred Devices Plastic Medium-Power Complementar

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