Plastic Darlington complementary silicon power transistors designed ge

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Plastic Darlington complementary silicon power transistors designed ge

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(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors
Plastic Darlington complementary silicon power transistors designed general purpose amplifier low-speed switching applications.
Ratings: Machine Model,
Human Body Model, 8000
AMPERES DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS, WATTS
Epoxy Meets 0.125 Pb-Free Packages Available*
MAXIMUM RATINGS
Rating Collector-Emitter Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039 2N6034 2N6035, 2N6038 2N6036, 2N6039 Symbol VCEO Value Unit TO-225AA CASE STYLE
Collector-Base Voltage
VCBO
MARKING DIAGRAM
Emitter-Base Voltage Collector Current Base Current Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Continuous Peak
VEBO Tstg
mAdc mW/°C mW/°C 2N603x
N603xG
Year Work Week Device Code Pb-Free Package
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RqJC RqJA 3.12 83.3 Unit °C/W °C/W
ORDERING INFORMATION
detailed ordering shipping information package dimensions section page this data sheet.
Stresses exceeding Maximum Ratings damage device. Maximum Ratings stress ratings only. Functional operation above Recommended Operating Conditions implied. Extended exposure stresses above Recommended Operating Conditions affect device reliability.
*For additional information Pb-Free strategy soldering details, please download Semiconductor Soldering Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev.
Publication Order Number: 2N6035/D
(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
Characteristic CHARACTERISTICS Collector-Emitter Sustaining Voltage mAdc, VCEO(sus) 2N6034 2N6035, 2N6038 2N6036, 2N6039 ICEO 2N6034 2N6035, 2N6038 2N6036, 2N6039 ICEX 2N6034 2N6035, 2N6038 2N6036, 2N6039 2N6034 2N6035, 2N6038 2N6036, 2N6039 ICBO 2N6034 2N6035, 2N6038 2N6036, 2N6039 IEBO mAdc mAdc Symbol Unit
Collector-Cutoff Current (VCE Vdc, (VCE Vdc, (VCE Vdc, Collector-Cutoff Current (VCE Vdc, VBE(off) Vdc) (VCE Vdc, VBE(off) Vdc) (VCE Vdc, VBE(off) Vdc) (VCE Vdc, VBE(off) Vdc, 125_C) (VCE Vdc, VBE(off) Vdc, 125_C) (VCE Vdc, VBE(off) Vdc, 125_C) Collector-Cutoff Current (VCB Vdc, (VCB Vdc, (VCB Vdc, Emitter-Cutoff Current (VBE Vdc, CHARACTERISTICS Current Gain Adc, Vdc) Adc, Vdc) Adc, Vdc) Collector-Emitter Saturation Voltage Adc, mAdc) Adc, mAdc) Base-Emitter Saturation Voltage Adc, mAdc) Base-Emitter Voltage Adc, Vdc) DYNAMIC CHARACTERISTICS Small-Signal Current-Gain 0.75 Adc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) *Indicates JEDEC Registered Data.
VCE(sat) VBE(sat) VBE(on) 15,000
|hfe| 2N6034, 2N6035, 2N6036 2N6038, 2N6039
(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
VARIED OBTAIN DESIRED CURRENT LEVELS MUST FAST RECOVERY TYPE, 1N5825 USED ABOVE MSD6100 USED BELOW
approx +8.0 approx DUTY CYCLE 1.0% +4.0
disconnected varied obtain desired test currents. test circuit, reverse diode, polarities input pulses.
SCOPE
IC/IB
25°C
TIME
VBE(off)
0.04 0.06
COLLECTOR CURRENT (AMP)
Figure Switching Times Test Circuit
Figure Switching Times
r(t), TRANSIENT THERMAL RESISTANCE, NORMALIZED
0.05 0.02 0.01 SINGLE PULSE P(pk) qJC(t) r(t) 3.12°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) qJC(t) DUTY CYCLE, t1/t2
0.07 0.05 0.03
0.02 0.01 0.01
0.02 0.03
0.05
TIME (ms)
1000
Figure Thermal Response
(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
ACTIVE-REGION SAFE-OPERATING AREA
150°C BONDING WIRE LIMITED THERMALLY LIMITED 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 2N6039 2N6038 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
COLLECTOR CURRENT (AMP)
150°C BONDING WIRE LIMITED THERMALLY LIMITED 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 2N6036 2N6035 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2N6035, 2N6036
COLLECTOR CURRENT (AMP)
Figure 2N6038, 2N6039
25°C
There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. data Figures based J(pk) 150_C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided TJ(pk) 150_C. TJ(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown.
CAPACITANCE (pF)
0.04 0.06 REVERSE VOLTAGE (VOLTS)
Figure Capacitance
2N6034, 2N6035, 2N6036
hFE, CURRENT GAIN 25°C 125°C hFE, CURRENT GAIN
2N6038, 2N6039
125°C
25°C 0.04 0.06
0.04 0.06
COLLECTOR CURRENT (AMP)
COLLECTOR CURRENT (AMP)
Figure Current Gain
(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
COLLECTOR-EMITTER VOLTAGE (VOLTS) 25°C BASE CURRENT (mA) COLLECTOR-EMITTER VOLTAGE (VOLTS) BASE CURRENT (mA) 25°C
Figure Collector Saturation Region
25°C VOLTAGE (VOLTS) VBE(sat) IC/IB VOLTAGE (VOLTS)
25°C VBE(sat) IC/IB
VCE(sat) IC/IB
VCE(sat) IC/IB
0.04 0.06
0.04 0.06
COLLECTOR CURRENT (AMP)
COLLECTOR CURRENT (AMP)
Figure "On" Voltages
ORDERING INFORMATION
Device 2N6034 2N6034G 2N6035 2N6035G 2N6036 2N6036G 2N6038 2N6038G 2N6039 2N6039G Package TO-225AA TO-225AA (Pb-Free) TO-225AA TO-225AA (Pb-Free) TO-225AA TO-225AA (Pb-Free) TO-225AA TO-225AA (Pb-Free) TO-225AA TO-225AA (Pb-Free) Units Shipping
(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
PACKAGE DIMENSIONS
TO-225AA CASE 77-09 ISSUE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. 077-01 THRU OBSOLETE, STANDARD 077-09. INCHES 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 0.050 0.095 0.015 0.025 0.575 0.655 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 MILLIMETERS 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 1.27 2.41 0.39 0.63 14.61 16.63 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02
0.25 (0.010)
0.25 (0.010)
STYLE EMITTER COLLECTOR BASE
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2N6035/D

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