NE960R275 HIGH OUTPUT POWER: 25.0 HIGH LINEAR GAIN: 14.5 HIGH EFF

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NE960R275 HIGH OUTPUT POWER: 25.0 HIGH LINEAR GAIN: 14.5 HIGH EFF

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0.2W Ku-BAND POWER GaAs MESFET
NE960R275
HIGH OUTPUT POWER: 25.0 HIGH LINEAR GAIN: 14.5 HIGH EFFICIENCY: 14.5 HIGH RELIABILITY CLASS OPERATION
OUTLINE DIMENSIONS (Units
PACKAGE OUTLINE
+0.15 -0.05 PLACES GATE SOURCE
DRAIN
BOTH LEADS
DESCRIPTION
NE960R275 Power GaAs MESFET covering range designed Band amplifiers oscillator applications. device incorporates (tungsten silicide) gate silicon dioxide glassivation. NEC's strigent quality assurance test procedures assure highest reliability performance.
+0.06 -0.02
1.13
ELECTRICAL CHARACTERISTICS
PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB POUT CHARACTERISTICS Linear Gain Output Power
25°C) NE960R275 UNITS °C/W 0.09 -2.5 -1.8 22.0 10.0 25.0 24.0 0.35 -0.5 TEST CONDITIONS IDSQ 14.5 GHz, dBm1 POUT P1dB1 Channel Case
Functional Characteristics
Power Fixed Input Power Power Added Efficiency Thermal Resistance Saturated Drain Current Pinch-off Voltage Gate Drain Break Down Voltage
IDSS BVGD
Note: IDSQ 14.5 GHz.
Electrical Characteristics
California Eastern Laboratories
NE960R275 ABSOLUTE MAXIMUM RATINGS1
SYMBOLS TSTG PARAMETERS Drain Source Voltage Gate Source Voltage Total Power Dissipation Drain Current Gate Current (forward) Gate Current (reverse) Channel Temperature Storage Temperature UNITS RATINGS -2.5 +175
RECOMMENDED OPERATING LIMITS
SYMBOLS GCOMP PARAMETERS Drain Source Voltage Channel Temperature Gain Compression UNITS dBcomp
Note: Operation excess these parameters result permanent damage.
TYPICAL PERFORMANCE CURVES 25°C)
OUTPUT POWER EFFICIENCY INPUT POWER
DRAIN CURRENT LINEAR GAIN INPUT POWER
Output Power, POUT (dBm)
Drain Current, (mA)
14.5 tone) IDSQ
14.5 tone) IDSQ
Input Power, (dBm)
Input Power, (dBm)
GATE CURRENT INPUT POWER
14.5 tone) IDSQ
Gate Current, (mA)
-0.5
Input Power, (dBm)
Linear Gain, (dB)
Efficiency,
NE960R275 TYPICAL SCATTERING PARAMETERS 25°C)
NE960R275 IDSQ
FREQUENCY 10.0 11.0 12.0 13.0 14.0 15.0 16.0 0.89 0.86 0.85 0.84 0.81 0.83 0.81 0.75 0.71 0.62 0.48 0.54 0.69 0.80 0.81 -113 -129 -138 -140 -144 -152 -163 -176 3.99 2.88 2.29 1.99 1.78 1.77 1.82 1.89 2.12 2.42 2.50 2.32 1.77 1.30 1.03 -113 -144 -166 0.057 0.058 0.057 0.057 0.059 0.060 0.062 0.062 0.064 0.072 0.074 0.065 0.049 0.040 0.039 -132 -176 0.42 0.46 0.43 0.41 0.44 0.49 0.53 0.52 0.47 0.45 0.50 0.56 0.57 0.61 0.67 -110 -125 -135 -141 -150 -167
START GHz, STOP GHz, STEP
+90°
+135°
+45°
±180°
-0.5 -1.0
-2.0 Rmax
-135° -90°
-45° Rmax
+90°
+45°
+135°
±180°
-135° -90° -45° Rmax
-0.5 -1.0
-2.0 Rmax
EXCLUSIVE NORTH AMERICAN AGENT
MICROWAVE OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, 95054-1817 (408) 988-3500 Telex 34-6393 (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. Canada only) Internet: http://WWW.CEL.COM DATA SUBJECT CHANGE WITHOUT NOTICE 07/18/2001

NE960R275 HIGH OUTPUT POWER: 25.0 HIGH LINEAR GAIN: 14.5 HIGH EFF

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