CLASS OPERATION HIGH EFFICIENCY: BROADBAND CAPABILITY PACKAGE OPTIONS:
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WATT C-BAND POWER GaAs MESFET
CLASS OPERATION HIGH EFFICIENCY: BROADBAND CAPABILITY PACKAGE OPTIONS: Chip Hermetic Package PARTIALLY MATCHED INPUT PACKAGED DEVICES PROVEN RELIABILITY
NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 PART NUMBER
NE85002 SERIES
SELECTION CHART
TYPICAL PERFORMANCE FREQUENCY RANGE (dBm) (GHz) (dB) POUT 33.8 33.8 33.8 33.5 10.5
DESCRIPTION
NE8500295 power GaAs covers frequency range with three different Class partially matched devices. Each packaged device input lumped element matching network. NE8500200 six-cell recessed gate chip used "95" package. device incorporates Ti-Al gate structure, SiO2 glassivation plated heat sink technology.
ELECTRICAL CHARACTERISTICS 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS IDSS BVGDO PTEST2 NE85002001 (CHIP) NE8500295-4 NE8500295-6 NE8500295-8 1900 -1.0 -2.4
PARAMETERS CONDITIONS UNITS Saturated Drain Current Pinch-off Voltage Transconductance IDSS Drain-Gate Breakdown Voltage Gate Source Current, IDSQ POUT PTEST Power Output Test Point 27.0 24.5 25.5 Linear Gain Power Added Efficiency PTEST -2.4 -3.0
1900 -1.0 -2.4 -3.0
1900 -1.0 -2.4 -3.0
1900 -1.0 -3.0
Thermal Resistance (Channel-to-Case) °C/W
33.8 33.8 33.8
33.5
ADD3
10.5
Notes: Six-cell chip: cells used. performance chip determined packaging chips wafer. Wafer rejection criteria standard devices rejects samples. This production test. Test frequencies are: GHz, GHz, NE8500200 GHz.
POUT 100%
California Eastern Laboratories
NE85002 SERIES ABSOLUTE MAXIMUM RATINGS 25°C)
SYMBOLS TSTG PARAMETERS Drain Source Voltage Gate Drain Gate Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Total power Dissipation UNITS RATINGS +175
RECOMMENDED OPERATING CONDITIONS
SYMBOLS GCOMP PARAMETERS Drain Source Voltage Channel Temperature Input Power Gate Resistance UNITS dBCOMP
NE8500295-6 LARGE SIGNAL IMPEDANCES
FREQUENCY 5.90 6.20 6.40 6.50 13.16 j44.75 22.77 j59.68 149.70 j73.98 43.58 j56.13 ZOUT 11.48 j21.52 16.16 j25.02 23.44 j40.36 12.87 j11.86
impedance input matching circuit seen gate. ZOUT impedance output matching circuit seen drain.
TYPICAL PERFORMANCE CURVE 25°C)
POWER DERATING CURVE
OUTPUT POWER INPUT POWER
Total Power Dissipation,
Output Power, POUT (dBm)
Case Temperature, (°C)
Input Power, (dBm)
NE85002 SERIES TYPICAL SCATTERING PARAMETERS 25°C)
+90° +120° +60°
+150°
+30°
±180°
-150°
-30°
-60° -90°
-120°
NE8500295-4
FREQUENCY (GHz) 10.0 1.003 0.971 0.972 0.987 0.976 0.965 0.927 0.886 0.843 0.882 0.929 0.945 0.937 0.929 0.919 0.905 0.883 0.843 0.779 0.723 0.683 -81.900 -161.600 -179.600 169.800 160.100 150.700 145.700 139.600 134.633 129.600 118.200 106.500 96.800 87.900 76.700 60.100 34.100 0.700 -29.300 -59.300 -97.000 0.009 0.010 0.012 0.013 0.017 0.018 0.018 0.020 0.014 0.021 0.037 0.047 0.054 0.058 0.069 0.086 0.117 0.142 0.141 0.133 0.114 14.230 135.700 3.768 90.400 2.006 69.100 1.479 51.400 1.255 34.300 1.205 15.900 1.149 -2.500 1.343 -30.300 1.486 -73.367 1.233 -126.500 0.738 -166.200 0.455 166.100 0.303 143.700 0.227 124.600 0.190 104.500 0.186 80.200 0.187 47.000 0.174 8.700 0.144 -26.400 0.124 -51.800 0.116 -74.600 -14.900 26.000 19.700 27.200 27.600 18.300 20.200 11.800 20.367 76.600 54.400 38.400 25.900 15.100 7.600 0.300 -18.200 -44.800 -74.800 -95.500 -110.500 0.428 0.414 0.429 0.457 0.479 0.514 0.588 0.700 0.864 0.931 0.838 0.785 0.769 0.763 0.756 0.725 0.676 0.629 0.623 0.647 0.661 -158.600 -173.100 -178.200 -178.700 179.500 177.400 -176.700 -176.000 173.900 153.400 137.500 127.500 121.100 116.400 112.300 107.100 96.600 80.500 66.100 55.900 52.500 -0.384 0.655 0.923 0.521 0.804 0.976 1.876 1.464 1.049 -0.147 -0.011 0.325 1.053 1.876 2.389 2.654 2.868 3.794 6.295 8.799 11.714 MAG1 (dB) 31.990 25.761 22.231 20.560 18.682 18.257 12.657 14.232 18.899 17.687 12.999 9.859 6.087 0.532 -2.190 -3.736 -5.411 -7.842 -10.881 -12.745 -13.614
Note: Gain Calculations:
|S21| |S12|
When undefined values used.
|S21| |S11| |S22| |S12| |S12 S21|
NE85002 SERIES TYPICAL SCATTERING PARAMETERS 25°C)
+90° +120° +60°
+30°
+150°
±180°
-150°
-30°
-60° -90°
-120°
NE8500295-6
FREQUENCY (GHz) 10.0 Note: Gain Calculations:
|S21| |S12|
0.963 0.952 0.947 0.963 0.956 0.949 0.948 0.898 0.876 0.847 0.813 0.737 0.560 0.264 0.344 0.539 0.623 0.637 0.610 0.574 0.514 -59.200 -149.100 -173.800 172.900 161.800 150.900 140.700 138.500 128.200 116.000 101.800 85.400 69.800 73.200 127.700 117.600 90.700 53.500 16.000 -16.900 -55.800
0.003 0.016 0.017 0.018 0.021 0.022 0.029 0.031 0.036 0.041 0.048 0.054 0.057 0.046 0.023 0.013 0.038 0.075 0.096 0.099 0.090 16.698 149.400 5.714 97.600 3.033 74.200 2.152 56.400 1.701 41.000 1.472 26.000 1.328 11.300 1.164 0.700 1.168 -13.300 1.278 -28.700 1.432 -47.900 1.648 -71.000 1.926 -99.800 2.118 -137.200 1.924 -176.300 1.625 151.000 1.406 119.500 1.163 84.600 0.868 52.600 0.676 25.900 0.561 -0.600
29.700 22.800 20.000 17.400 22.200 21.200 20.600 17.400 11.000 4.800 -6.900 -23.900 -47.400 -82.700 -123.600 99.500 36.300 -1.900 -41.300 -69.300 -88.500 0.373 0.463 0.485 0.512 0.532 0.556 0.578 0.605 0.607 0.595 0.616 0.664 0.757 0.871 0.920 0.884 0.838 0.779 0.718 0.693 0.673
-169.500 -171.200 -179.300 177.700 173.900 172.700 170.500 168.000 163.200 158.400 152.300 146.000 140.000 131.200 120.200 110.200 95.900 74.700 56.000 47.000 43.200
0.408 0.377 0.769 0.653 0.859 1.018 0.806 1.547 1.554 1.529 1.250 1.072 0.966 1.101 1.866 3.241 1.283 1.035 1.653 2.524 3.931
MAG1 (dB) 37.455 25.528 22.514 20.776 19.085 17.440 16.608 11.388 10.727 10.646 11.735 13.203 15.288 14.693 13.858 12.959 12.486 10.759 4.837 1.493 -0.936
When undefined values used.
|S21| |S11| |S22| |S12| |S12 S21|
Maximum Available Gain Maximum Stable Gain
NE85002 SERIES TYPICAL SCATTERING PARAMETERS 25°C)
+90° +120° +60°
+30°
+150°
±180°
-150°
-30°
-120° -90°
-60°
NE8500295-8
FREQUENCY (GHz) 10.0 Note: Gain Calculations:
|S21| |S12|
0.971 0.937 0.934 0.947 0.939 0.921 0.906 0.887 0.866 0.836 0.805 0.734 0.587 0.303 0.116 0.394 0.536 0.570 0.497 0.354 0.288 -54.800 -146.300 -174.000 170.900 158.300 153.800 145.400 137.000 126.200 113.900 98.800 80.200 57.400 23.500 -152.800 158.700 126.700 91.000 45.200 3.800 -34.500
0.004 0.016 0.018 0.020 0.026 0.023 0.027 0.034 0.041 0.044 0.056 0.065 0.073 0.075 0.063 0.042 0.025 0.033 0.069 0.067 0.068
35.400 24.000 22.300 20.800 28.100 22.700 20.900 19.900 10.200 6.000 -4.100 -18.900 -41.500 -69.900 -101.500 -134.100 165.800 49.500 -26.200 -59.800 -86.200 0.427 0.464 0.492 0.513 0.534 0.573 0.592 0.603 0.602 0.583 0.592 0.628 0.695 0.788 0.874 0.883 0.858 0.843 0.773 0.747 0.712
-155.900 -172.300 -178.900 177.400 173.300 169.500 168.100 165.700 160.300 155.200 149.200 142.800 138.700 133.400 125.700 115.900 102.200 81.500 59.800 51.700 46.800
MAG1 (dB)
17.977 150.900 6.354 98.200 3.391 74.500 2.382 56.200 1.869 40.300 1.473 27.700 1.335 15.900 1.272 2.700 1.252 -11.100 1.343 -25.500 1.483 -43.600 1.658 -64.900 1.893 -90.600 2.124 -122.700 2.078 -159.400 1.824 167.500 1.587 137.200 1.413 103.500 1.105 66.600 0.787 38.600 0.622 17.000
0.030 0.452 0.821 0.811 0.954 1.495 1.570 1.497 1.423 1.556 1.211 1.074 0.948 0.925 1.015 1.421 2.264 1.665 1.861 3.631 5.336
36.527 25.989 22.751 20.759 18.566 13.906 12.501 11.563 10.984 10.456 11.454 12.409 14.138 14.521 14.431 12.522 11.697 11.551 6.692 2.173 -0.631
When undefined values used.
|S21| |S11| |S22| |S12| |S12 S21|
Maximum Available Gain Maximum Stable Gain
NE85002 SERIES TEST CIRCUIT
GATE POWER SOURCE
BIAS SUPPLY
DRAIN
20dB DIRECTIONAL COUPLER
Circulator
BIAS
TUNER
D.U.T.
TUNER
BIAS
ATTN.
POWER METER
POWER METER
ATTN.
BIASING PROCEDURE Turn power supply. Make sure voltage Turn Apply then apply Decrease obtain required drain current, Apply input adjust gate voltage maintain desired drain current. exceed gate current max).
OUTLINE DIMENSIONS HANDLING
PACKAGE OUTLINE (Units
NE8500200 (CHIP) (Units
2.5±0.3 PLACES SOURCE
0.7±0.1 GATE
5.9±0.2
1800
DRAIN 6.5±0.3 14.0±0.15 18.0±0.5
+.06 -.02 2.1±0.15
ATTACHMENT
attach accomplished with either Au-Ge (390±10°C) Au-Sn (290 10°C) preforms forming environment. Epoxy attach recommended.
7.2±0.2
BONDING
Gate drain bonding wires should minimum length, semihard fold wire (3-8% elongation) microns less diameter. source should connected with gold ribbon mesh. Bonding should performed with wedge that taper approximately 15°. attach bonding time should kept minimum. general rule, bonding operation should kept within 300°C minute curve. longer periods required, temperature should lowered.
PRECAUTIONS
user must operate clean, environment. chip channel glassivated mechanical protection only does preclude necessity clean environment. bonding equipment should periodically checked sources surge voltage should properly grounded times. test handling equipment should grounded minimize possibilities static discharge. AN-1001 Recommended Handling Procedure Microwave Transistor MMIC Chips additional infromation.
Life Support Applications These products intended life support devices, appliances, systems where malfunction these products reasonably expected result personal injury. customers using selling these products such applications their risk agree fully indemnify damages resulting from such improper sale.
EXCLUSIVE NORTH AMERICAN AGENT MICROWAVE OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, 95054-1817 (408) 988-3500 Telex 34-6393 (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT CHANGE WITHOUT NOTICE 06/26/2002
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