(TC= unless otherwise noted) SYMBOLS VDSX VGDX VGSX TSTG PARAMETERS Dr

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(TC= unless otherwise noted) SYMBOLS VDSX VGDX VGSX TSTG PARAMETERS Dr

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BAND MEDIUM POWER GaAs MESFET NE6500496
(TC= unless otherwise noted) SYMBOLS VDSX VGDX VGSX TSTG PARAMETERS Drain Source Voltage Gate Drain Voltage Gate Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS RATINGS +175
HIGH OUTPUT POWER: HIGH LINEAR GAIN: 11.5 HIGH EFFICIENCY (PAE): INDUSTRY STANDARD PACKAGING
DESCRIPTION
NE6500496 medium power GaAs MESFET designed output stage driver high power devices. device internal matching used from frequencies GHz. chips used this series offer superior reliability consistent performance which microwave semiconductors known. NE6500496 Transistors manufactured NEC's stringent quality assurance standards ensure highest reliability consistent superior performance.
OUTLINE DIMENSIONS (Units
PACKAGE OUTLINE
5.2±0.3 1.0±0.1 BOTH LEADS Gate 2.2±0.2
4.3±0.2
RECOMMENDED OPERATING LIMITS
SYMBOLS GCOMP PARAMETERS Drain Source Voltage Channel Temperature Gain Compression Gate Resistance UNITS
+.06 -.02 1.7±0.15 6.0±0.2 0.6±0.1 5.2±0.3 11.0±0.15 15.0±0.3 Source Drain
4.0±0.1
ELECTRICAL CHARACTERISTICS
PART NUMBER SYMBOLS CHARACTERISTICS Power Fixed Input Power Linear Gain Power Added Efficiency Drain Source Current Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance
25°C) NE6500496 UNITS °C/W -3.5 35.5 11.0 36.0 11.5 -2.0 1300 -0.5 Channel Case TEST CONDITIONS 26.0 IDSQ GHz;
Functional Characteristics
POUT
Electrical Characteristics
IDSS
California Eastern Laboratories
NE6500496 TYPICAL SCATTERING PARAMETERS
+90°
4.05 4.05
+120° +150°
+60°
+30°
±180°
0.05
-150°
-30°
0.05
-120° -90°
-60°
MAG: DIV., 20.0 MAG: 0.02 DIV.,
10.0 FREQUENCY (GHz) 0.10 0.20 0.40 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 0.975 0.956 0.949 0.947 0.945 0.944 0.944 0.944 0.945 0.947 0.950 0.940 0.933 -80.100 -118.900 -148.400 -155.300 -171.200 -178.200 176.800 172.700 168.700 165.000 160.500 155.300 149.600 17.360 11.506 6.420 5.212 2.691 1.834 1.408 1.166 1.008 0.901 0.838 0.806 0.792 137.500 116.500 98.700 93.800 77.900 66.500 55.800 46.200 36.900 28.700 20.000 10.900 0.400 0.011 0.015 0.016 0.017 0.019 0.022 0.026 0.031 0.039 0.046 0.056 0.059 0.068 55.300 39.800 28.900 26.700 32.400 38.500 43.400 46.000 46.700 47.000 41.300 37.300 34.000 0.601 0.657 0.687 0.692 0.702 0.708 0.712 0.728 0.753 0.761 0.769 0.775 0.791 -172.500 -175.000 -179.500 178.900 173.300 168.900 163.500 157.900 152.900 149.200 144.600 138.600 131.200 0.131 0.230 0.369 0.426 0.763 0.968 1.076 1.086 0.986 0.921 0.771 0.812 0.772 MAG1 (dB) 31.982 28.848 26.034 24.866 21.512 19.210 15.651 13.965 14.124 12.920 11.751 11.355 10.662
Note: Gain Calculations:
|S21| |S12|
When undefined values used.
|S21| |S11| |S22| |S12| |S12 S21|
Maximum Available Gain Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT
MICROWAVE OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, 95054-1817 (408) 988-3500 Telex 34-6393 (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. Canada only) Internet: http://WWW.CEL.COM 10/16/2000 DATA SUBJECT CHANGE WITHOUT NOTICE

(TC= unless otherwise noted) SYMBOLS VDSX VGDX VGSX TSTG PARAMETERS Dr

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