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AS58C1001
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AS58C1001 Rev. 7/02
PLEASE NOTE: notice issued this product 2001. However, large amount inventory available. assistance, please contact your local sales representative.
Austin Semiconductor, Inc. reserves right change products specifications without notice.
Austin Semiconductor, Inc. 128K EEPROM Memory
AVAILABLE MILITARY SPECIFICATIONS
AS58C1001
ASSIGNMENT (Top View)
5962-38267 MIL-STD-883
32-Pin SF), 32-Pin CSOJ (DCJ), 32-Pin (DG)
RDY/BUSY\ RES\
FEATURES
High speed: 150, 200, 250ns Data Retention: Years power dissipation, active current (20mW/MHz (TYP)), standby current (100µW(MAX)) Single (+10%) power supply Data Polling Ready/Busy Signals Erase/Write Endurance (10,000 cycles page mode) Software Data protection Algorithm Data Protection Circuitry during power on/off Hardware Data Protection with Automatic Programming: Automatic Page Write: 10ms (MAX) Byte page size
OPTIONS
Timing 150ns access 200ns access 250ns access Packages Ceramic Ceramic Flat Pack Radiation Shielded Ceramic Ceramic Plastic Operating Temperature Ranges -Military (-55oC +125oC) -Industrial (-40oC +85oC)
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32-Pin (ECA)
MARKINGS
*NOTE: Package connected ground (Vss).
GENERAL DESCRIPTION
Austin Semiconductor, Inc. AS58C1001 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized 131, bits. AS58C1001 capable system electrical Byte Page reprogrammability. AS58C1001 achieves high speed access, power consumption, high level reliability employing advanced MNOS memory technology CMOS process circuitry technology CMOS process circuitry technology. This device 128-Byte Page Programming function make erase write operations faster. AS58C1001 features Data Polling Ready/Busy signal indicate completion erase programming operations.
AS58C1001 Rev. 7/02
This EEPROM provides several levels data protection. Hardware data protection provided with pin, addition noise protection signal write inhibit during power off. Software data protection implemented using JEDEC Optional Standard algorithm. AS58C1001 designed high reliability most demanding applications. Data retention specified years erase/write endurance guaranteed minimum 10,000 cycles Page Mode.
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Austin Semiconductor, Inc. reserves right change products specifications without notice.
AS58C1001
FUNCTIONAL BLOCK DIAGRAM
High Voltage Generator I/O0 I/O7 Ready/Busy
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RES\ Control Logic Timing Decoder Gating Address Buffer Latch Decoder Memory Array Data Latch
Buffer Input Latch
MODE SELECTION
MODE READ STANDBY WRITE DESELECT WRITE INHIBIT DATA POLLING PROGRAM
AS58C1001 Rev. 7/02
RES\
RDY/BUSY\ High-Z High-Z High-Z High-Z -VOL High-Z
DOUT High-Z High-Z -Data (I/O7) High-Z
Austin Semiconductor, Inc. reserves right change products specifications without notice.
FUNCTIONAL DESCRIPTION
AUTOMATIC PAGE WRITE Page Write feature allows Bytes data written into EEPROM single cycle allows undefined data within Bytes written corresponding undefined address A6). Loading first Byte data, data load window 30µs opens second. same manner each additional Byte data loaded within 30µs. case kept high 100µs after data input, EEPROM enters erase write automatically only input data written into EEPROM. Page mode data written accessed times page, Byte mode times Byte.
AS58C1001
DATA PROTECTION
protect data during operation power on/off, AS58C1001 has: Data protection against Noise Control Pins (CE\, OE\, WE\) during Operation. During readout standby, noise control pins trigger turn EEPROM programming mode mistake. prevent this phenomenon, AS58C1001 noise cancellation function that cuts noise width 20ns less programming mode. careful allow noise width more than 20ns control pins.
DATA\ POLLING
Data\ Polling allows status EEPROM determined. EEPROM Read mode during Write cycle, inversion last Byte data loaded outputs from I/O, indicate that EEPROM performing Write operation.
WRITE PROTECTION
Noise protection: Noise write cycle will trigger with pulse less than 20ns. Write inhibit: Holding low, high high, inhibits write cycle during power on/off.
OPERATION
During write cycle, addresses latched falling edge CE\, data latched rising edge CE\.
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WRITE/ERASE ENDURANCE DATA RETENTION
endurance with page programming cycles cumulative failure rate) data retention time more than years when device programmed less than cycles.
AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
(EXAMPLE)
AS58C1001
FUNCTIONAL DESCRIPTION (continued)
DATA PROTECTION (continued) Data protection on/off. When RES\ low, EEPROM cannot erased programmed. Therefore, data protected keeping RES\ when switched. RES\ should high during programming because does provide latch function. When turned off, noise control pins generated external circuits (CPU, etc.) turn EEPROM programming mode mistake. prevent this unintentional programming, EEPROM must kept unprogrammable, standby readout state using reset signal RES\ pin. addition, when RES\ kept high on/off timing, input level control pins (CE\, OE\, WE\) must held CE\=Vcc OE\=LOW WE\=Vcc level. Software Data Protection protect against unintentional programming caused noise generated external circuits, AS58C1001 Software data protection function. initate Software data protection mode, bytes data must input, followed dummy write cycle address data byte. This exact sequence switches device into protection mode.
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RES\
*unprogrammable *unprogrammable
Write Address 5555
Write Data (Normal Data Input)
2AAA 5555
Software data protection mode cancelled inputting following Bytes. This changes AS58C1001 Non-Protection mode, normal operation.
Address 5555 2AAA 5555 5555 2AAA 5555
Data
AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
ABSOLUTE MAXIMUM RATINGS* Voltage Supply Relative Vss.-0.5V +7.0V1 Voltage Relative Vss.-0.6V +7.0V1 Storage Temperature .-65°C +150°C Operating Temperature Range.-55oC +125oC Soldering Temperature Range.260oC Maximum Junction Temperature**.+150°C Power Dissipation.1.0W
AS58C1001
ELECTRICAL CHARACTERISTICS RECOMMENDED OPERATING CONDITIONS (-55oC 125oC; +10%)
PARAMETER Input High (Logic Voltage Input (Logic Voltage Input Voltage (RES\ Pin) Input Leakage Current Output Leakage Current Output High Voltage Output Voltage CONDITION SYMBOL -0.3 Vcc-0.5 0.3V +1.0 UNITS NOTES
PARAMETER
Power Supply Current: Operating
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Output(s) disabled, VOUT -400
*Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions above those indicated operation section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability. Junction temperature depends upon package type, cycle time, loading, ambient temperature airflow.
CONDITIONS
UNITS NOTES
IOUT=OmA, 5.5V Cycle=1µS, Duty=100%
ICC3
IOUT=OmA, 5.5V Cycle=MIN, Duty=100%
CE\=Vcc, 5.5V Power Supply Current: Standby CE\=VIH, 5.5V
ICC1
ICC2
CAPACITANCE
PARAMETER Input Capacitance Output Capactiance CONDITIONS 1MHz
SYMBOL
UNITS
NOTES
AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
AS58C1001
ELECTRICAL CHARACTERISTICS READ OPERATION (-55oC 125oC; +10%)
Test Conditions
Input Pulse Levels: Input rise fall times: Output Load: Reference levels measuring timing:
0.0V 3.0V 20ns Gate +100pF (including scope jig) 1.5V, 1.5V
ELECTRICAL CHARACTERISTICS SOFTWARE DATA PROTECTION CYCLE OPERATION
PARAMETER Byte Load Cycle Time Write Cycle Time SYMBOL tBLC 0.55
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UNITS
ELECTRICAL CHARACTERISTICS DATA\ POLLING OPERATION
PARAMETER Output Enable Hold Time Output Enable Write Setup Time Write Start Time Write Cycle Time SYMBOL tOEH tOES -MAX UNITS
AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
AS58C1001
ELECTRICAL CHARACTERISTICS PAGE ERASE PAGE WRITE OPERATIONS
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AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
AS58C1001
ELECTRICAL CHARACTERISTICS BYTE ERASE BYTE WRITE OPERATIONS
PARAMETER Address Setup Time Chip Enable Write Setup Time Write Pulse Width SYMBOL
UNITS
Address Hold Time Data Setup Time Data Hold Time
Chip Enable Hold Time
Enable Write Setup Time Output Enable Hold Time Write Cycle Time
Byte Load Window
Time Device Busy
RES\ Write Setup Time RES\ Setup Time
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tOES
tOEH
tRES
TEST CONDITIONS
Input Pulse Levels.0V Input Rise Fall Times.<20ns Input Timing Reference Level.1.5V Output Reference Level.1.5V Output Load.See Figure
NOTES:
Relative -3.0V pulse widths <50ns -1.0V pulse widths <50ns RES\ 100ua defined time which output becomes open circuit data longer driven. this device longer cycle than this value controlled operation controlled operation RES\ Reference only, tested
100pF GATE
Figure OUTPUT LOAD EQUIVALENT
AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
Austin Semiconductor, Inc. READ TIMING WAVEFORM Address
tACC
AS58C1001
SOFTWARE DATA PROTECTION TIMING WAVEFORM (protection mode)
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High-Z
Data RES\
Data Valid
tDFR
tBLC
Address Data
5555
AAAA 2AAA
5555
SOFTWARE DATA PROTECTION TIMING WAVEFORM (non-protection mode)
AAAA 2AAA AAAA 2AAA
5555
Write Address Write Data
Normal active mode
Address Data
AS58C1001 Rev. 7/02
5555
5555 5555
Austin Semiconductor, Inc. reserves right change products specifications without notice.
AS58C1001
DATA\ POLLING TIMING WAVEFORM
Address
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tOEH tOES I/O7 DOUT DOUT
TOGGLE WAVEFORM
Next Mode
Address
tOEH DOUT DOUT tOES
I/O7
transition from
AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
4321 4321 4321
Austin Semiconductor, Inc. PAGE WRITE TIMING WAVEFORM (WE\ CONTROLLED)
AS58C1001
Life
tOES
RDY/Busy\
High-Z
RES\
tRES
transition from
AS58C1001 Rev. 7/02
2143211 3143211 2113211 2113211
3213221 3213211 3243211 3213321
2143221 2143221 2113221 2143321
tBLC
tOEH
High-Z
Austin Semiconductor, Inc. reserves right change products specifications without notice.
AS58C1001
PAGE WRITE TIMING WAVEFORM (CE\ CONTROLLED)
Life
Address
tOES
RDY/Busy\
High-Z
RES\
AS58C1001 Rev. 7/02
tBLC
tOEH
High-Z
transition from
Austin Semiconductor, Inc. reserves right change products specifications without notice.
Austin Semiconductor, Inc. BYTE WRITE TIMING WAVEFORM (WE\ CONTROLLED)
AS58C1001
Life
Address
RDY/Busy\
High-Z
High-Z
RES\
transition from
AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
Austin Semiconductor, Inc. BYTE WRITE TIMING WAVEFORM (CE\ CONTROLLED)
AS58C1001
Life
Address
RDY/Busy\
High-Z
High-Z
RES\
transition from
AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
Case #208 (Package Designator ECA) 5962-38267, Case Outline
AS58C1001
Life
hx45
SYMBOL
SPECIFICATIONS 0.060 0.120 0.050 0.088 0.022 0.028 0.072 0.442 0.458 0.300 0.150 -0.458 0.540 0.560 0.400 0.200 -0.558 0.050 0.040 0.045 0.055 0.075 0.095
*All measurements inches.
AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
Case #305 (Package Designator 5962-38267, Case Outline
AS58C1001
Life
View
SYMBOL
*All measurements inches.
AS58C1001 Rev. 7/02
SPECIFICATIONS 0.125 0.150 0.090 0.110 0.015 0.019 0.003 0.007 0.810 0.830 0.775 0.785 0.745 0.755 0.425 0.445 0.290 0.310 0.045 0.055 1.000 1.100 0.290 0.310 0.026 0.037
Austin Semiconductor, Inc. reserves right change products specifications without notice.
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
Case #306 (Package Designator 5962-38267, Case Outline
AS58C1001
Life
View
SYMBOL
SPECIFICATIONS 0.097 0.123 0.090 0.110 0.015 0.019 0.003 0.007 0.810 0.830 0.745 0.755 0.425 0.445 0.330 0.356 0.045 0.055 1.000 1.100 0.290 0.310 0.026 0.037
NOTE: drawings SMD. ASI's package dimensional limits differ, they will within limits.
*All measurements inches.
AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
Case #508 (Package Designator DCJ)
AS58C1001
Life
SYMBOL
PACKAGE SPECIFICATIONS 0.132 0.142 0.076 0.086 0.018 0.028 0.018 0.032 0.015 0.019 0.816 0.834 0.745 0.755 0.430 0.440 0.465 0.485 0.415 0.425 0.045 0.055
*All measurements inches.
AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
Case (Package Designator
AS58C1001
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*All measurements millimeters.
AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
AS58C1001
ORDERING INFORMATION
EXAMPLE: AS58C1001ECA-20/XT Device Number AS58C1001 AS58C1001 AS58C1001 Package Type Speed Process EXAMPLE: AS58C1001F-25/883C Device Number AS58C1001 AS58C1001 AS58C1001 Package Type Speed Process
EXAMPLE: AS58C1001SF-15/IT Device Number AS58C1001 AS58C1001 AS58C1001 Package Type
EXAMPLE: AS58C1001DG-15/XT Device Number AS58C1001 AS58C1001 AS58C1001 Package Type
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EXAMPLE: AS58C1001DCJ-20/IT Device Number AS58C1001 AS58C1001 AS58C1001 Package Type Speed Process Speed Speed Process
Process
*AVAILABLE PROCESSES
Industrial Temperature Range Extended Temperature Range 883C Full Military Processing -40oC +85oC -55oC +125oC -55oC +125oC
**NOTE: package available only.
AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
AS58C1001
DSCC PART NUMBER CROSS REFERENCE*
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Package Designator Part Part#
AS58C1001ECA-25/883C AS58C1001ECA-20/883C AS58C1001ECA-15/883C 5962-3826716QUA 5962-3826717QUA 5962-3826718QUA
Package Designator
Part
Part#
AS58C1001F-25/883C AS58C1001F-20/883C AS58C1001F-15/883C
5962-3826716QMA 5962-3826717QMA 5962-3826718QMA
Package Designator Part
AS58C1001SF-25/883C AS58C1001SF-20/883C AS58C1001SF-15/883C
Part#
5962-3826716QNA 5962-3826717QNA 5962-3826718QNA
Package Designators currenly available SMD.
part number reference only. Orders received referencing part number will processed SMD.
AS58C1001 Rev. 7/02
Austin Semiconductor, Inc. reserves right change products specifications without notice.
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