VBUS OUT2 OUT1 VDSS 200V RDSon 25°C 208A 25°C Application We

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VBUS OUT2 OUT1 VDSS 200V RDSon 25°C 208A 25°C Application We

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APTM20DHM08G
VBUS OUT2 OUT1
VDSS 200V RDSon 25°C 208A 25°C
Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives
Features Power MOSFETs RDSon input Miller capacitance gate charge Avalanche energy rated Very rugged Kelvin source easy drive Very stray inductance Symmetrical design power connectors High level integration
0/VBUS
OUT1 VBUS 0/VBUS
Benefits Outstanding performance high frequency operation Direct mounting heatsink (isolated package) junction case thermal resistance profile RoHS Compliant
OUT2
Absolute maximum ratings
Symbol VDSS RDSon
Parameter Drain Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate Source Voltage Drain Source Resistance Maximum Power Dissipation Avalanche current (repetitive repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy 25°C 80°C
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com
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APTM20DHM08G July, 2006
25°C
ratings 3000
Unit
APTM20DHM08G
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Zero Gate Voltage Drain Current Drain Source Resistance Gate Threshold Voltage Gate Source Leakage Current
0V,VDS 200V 0V,VDS 160V
25°C 125°C
10V, 104A VDS,
1500 ±150
Unit
Dynamic Characteristics
Symbol Ciss Coss Crss Td(on) Td(off) Eoff Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate Source Charge Gate Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions 1MHz VBus 100V 208A Inductive switching 125°C VBus 133V 208A Inductive switching 25°C 15V, VBus 133V 208A, Inductive switching 125°C 15V, VBus 133V 208A,
14.4 4.66 0.29 1698 1858 1872 1972
Unit
Diode ratings characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Forward Current Diode Forward Voltage
Test Conditions VR=200V 200A 400A 200A 200A 133V di/dt 400A/µs 25°C 125°C 75°C
Unit
125°C 25°C 125°C 25°C 125°C
1680
Reverse Recovery Charge
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APTM20DHM08G July, 2006
Reverse Recovery Time
APTM20DHM08G
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight heatsink terminals Transistor Diode 2500 0.16 0.29 Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
Package outline (dimensions
application note APT0601 Mounting Instructions Power Modules www.microsemi.com
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APTM20DHM08G July, 2006
APTM20DHM08G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.18 Thermal Impedance (°C/W) 0.16 0.14 0.12 0.08 0.06 0.04 0.02 0.05 0.0001 0.001 0.01 Single Pulse
0.00001
rectangular Pulse Duration (Seconds) Voltage Output Characteristics 1400
VGS=15V 8.5V 7.5V 6.5V
Transfert Characteristics Drain Current
TJ=25°C J=125°C TJ=-55°C ID(on)xRDS(on)MAX 250µs pulse test duty cycle
1200 Drain Current 1000
Drain Source Voltage RDS(on) Drain Current Drain Current
Normalized GS=10V 104A
VGS, Gate Source Voltage
RDS(on) Drain Source Resistance
Drain Current Case Temperature
VGS=10V
VGS=20V
Drain Current
APTM20DHM08G July, 2006
Case Temperature (°C)
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APTM20DHM08G
RDS(on), Drain Source resistance (Normalized) Breakdown Voltage Temperature BVDSS, Drain Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 Junction Temperature (°C) Threshold Voltage Temperature VGS(TH), Threshold Voltage (Normalized) Drain Current Case Temperature (°C) Capacitance Drain Source Voltage 100000 Capacitance (pF)
Ciss
resistance Temperature Junction Temperature (°C) Maximum Safe Operating Area
VGS=10V 104A
1000
limited RDSon
100µs
Single pulse TJ=150°C TC=25°C
10ms 100ms
1000 VDS, Drain Source Voltage
VGS, Gate Source Voltage
Gate Charge Gate Source Voltage D=208A DS=40V =25°C Gate Charge (nC)
APTM20DHM08G July, 2006
VDS=100V
10000
Coss
VDS=160V
1000
Crss
VDS, Drain Source Voltage
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APTM20DHM08G
Delay Times Current d(on) td(off) (ns) Drain Current
VDS=133V RG=2.5 J=125°C L=100µH
Rise Fall times Current
DS=133V G=2.5 J=125°C L=100µH
d(off) (ns)
d(on)
Drain Current
Switching Energy Current Switching Energy (mJ) Eoff Drain Current Operating Frequency Drain Current IDR, Reverse Drain Current Frequency (kHz) Drain Current
DS=133V D=50% G=2.5 J=125°C C=75°C VDS=133V RG=2.5 TJ=125°C L=100µH
Switching Energy Gate Resistance
VDS=133V ID=208A TJ=125°C L=100µH
Eoff
Eoff (mJ)
Eoff
Gate Resistance (Ohms) Source Drain Diode Forward Voltage 1000 =150°C =25°C
Hard switching
VSD, Source Drain Voltage
APTM20DHM08G July, 2006
Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
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VBUS OUT2 OUT1 VDSS 200V RDSon 25°C 208A 25°C Application We

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