The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.    


Datasheet Search Engine   
 
Part # or Description: • 5V RS232 Driver • 2SC5066* • "Real Time Clock" • "USB connector" • "blue led" 5mm • 10 watt zener diode • 2N3055* motorola
 
Search Tip: Try entering the part number only. Include a wildcard (eg. lm317* or 1n4148*)

 

 

VBUS VCES 1700V 150A 80°C Application motor control Switched


Datasheet Thumbnail

  

Download PDF



Top Searches for this datasheet



APTGT150DA170G
VBUS
VCES 1700V 150A 80°C
Application motor control Switched Mode Power Supplies Power Factor Correction Features Trench Field Stop IGBT® Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current Avalanche energy rated RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance Symmetrical design power connectors High level integration Benefits Stable temperature behavior Very rugged Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat profile RoHS Compliant
0/VBUS
VBUS
0/VBUS
Absolute maximum ratings
Symbol VCES RBSOA
Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation 25°C 80°C 25°C 25°C 125°C
Reverse Bias Safe Operating Area
300A 1600V
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com
www.microsemi.com
APTGT150DA170G
July, 2006
ratings 1700
Unit
APTGT150DA170G
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 1700V 25°C 150A 125°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions 1MHz Inductive Switching (25°C) VBus 900V 150A Inductive Switching (125°C) VBus 900V 150A 125°C VBus 900V 150A 125°C
13.5 0.55 0.44
Unit
Chopper diode ratings characteristics
Symbol Characteristic VRRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions 25°C 125°C 80°C 25°C 125°C 25°C 125°C 25°C 125°C 25°C 125°C
1700
Unit
Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1700V
150A
17.5
July, 2006 APTGT150DA170G
150A 900V
di/dt =1600A/µs
www.microsemi.com
APTGT150DA170G
Symbol Characteristic RthJC VISOL TSTG Torque
Thermal package characteristics
Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight heatsink terminals IGBT Diode
0.14 0.26
Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
3500
Package outline (dimensions
application note APT0601 Mounting Instructions Power Modules www.microsemi.com
www.microsemi.com
APTGT150DA170G
July, 2006
APTGT150DA170G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics
TJ=125°C =13V 125°C =20V
J=25°C
VGE=15V
VGE=9V
Transfert Characteristics
TJ=25°C
Energy losses Collector Current
900V 125°C Eoff
J=125°C
(mJ)
TJ=125°C
Switching Energy Losses Gate Resistance (mJ) Gate Resistance (ohms)
900V =15V 150A 125°C
Reverse Bias Safe Operating Area 1200 1600 2000
GE=15V J=125°C RG=4.7
Eoff
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.16 Thermal Impedance (°C/W) 0.14 0.12 0.08 0.06 0.04 0.02 0.05 0.0001 0.001 Single Pulse 0.01 IGBT
0.00001
rectangular Pulse Duration (Seconds)
www.microsemi.com
APTGT150DA170G
July, 2006
APTGT150DA170G
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
=900V D=50% RG=4.7 J=125°C C=75°C
Forward Characteristic diode
J=25°C
TJ=125°C
hard switching
=125°C
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W)
Diode
0.25 0.15 0.05 0.05 0.0001 Single Pulse 0.001 0.01
0.00001
rectangular Pulse Duration (Seconds)
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
www.microsemi.com
APTGT150DA170G
Microsemi reserves right change, without notice, specifications information contained herein
July, 2006

Other recent searches


STR710 - STR710   STR710 Datasheet
KST63 - KST63   KST63 Datasheet
IDT7MPV4160 - IDT7MPV4160   IDT7MPV4160 Datasheet
IDT7MPV4161 - IDT7MPV4161   IDT7MPV4161 Datasheet
IDT7MPV4162 - IDT7MPV4162   IDT7MPV4162 Datasheet
IDT7MPV4162A - IDT7MPV4162A   IDT7MPV4162A Datasheet
IDT7MPV4163 - IDT7MPV4163   IDT7MPV4163 Datasheet
CXA3309ER - CXA3309ER   CXA3309ER Datasheet
74AC32 - 74AC32   74AC32 Datasheet
74ACT32 - 74ACT32   74ACT32 Datasheet
1N277 - 1N277   1N277 Datasheet

 

Privacy Policy | Disclaimer
© 2012 Datasheet Archive