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VBUS VCES 1700V 150A 80°C Application motor control Switched
Top Searches for this datasheetAPTGT150DA170G VBUS VCES 1700V 150A 80°C Application motor control Switched Mode Power Supplies Power Factor Correction Features Trench Field Stop IGBT® Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current Avalanche energy rated RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance Symmetrical design power connectors High level integration Benefits Stable temperature behavior Very rugged Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat profile RoHS Compliant 0/VBUS VBUS 0/VBUS Absolute maximum ratings Symbol VCES RBSOA Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation 25°C 80°C 25°C 25°C 125°C Reverse Bias Safe Operating Area 300A 1600V These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com www.microsemi.com APTGT150DA170G July, 2006 ratings 1700 Unit APTGT150DA170G ratings 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 1700V 25°C 150A 125°C 20V, Unit Dynamic Characteristics Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions 1MHz Inductive Switching (25°C) VBus 900V 150A Inductive Switching (125°C) VBus 900V 150A 125°C VBus 900V 150A 125°C 13.5 0.55 0.44 Unit Chopper diode ratings characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Test Conditions 25°C 125°C 80°C 25°C 125°C 25°C 125°C 25°C 125°C 25°C 125°C 1700 Unit Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1700V 150A 17.5 July, 2006 APTGT150DA170G 150A 900V di/dt =1600A/µs www.microsemi.com APTGT150DA170G Symbol Characteristic RthJC VISOL TSTG Torque Thermal package characteristics Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight heatsink terminals IGBT Diode 0.14 0.26 Unit °C/W Isolation Voltage, terminal case min, isol<1mA, 50/60Hz 3500 Package outline (dimensions application note APT0601 Mounting Instructions Power Modules www.microsemi.com www.microsemi.com APTGT150DA170G July, 2006 APTGT150DA170G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics TJ=125°C =13V 125°C =20V J=25°C VGE=15V VGE=9V Transfert Characteristics TJ=25°C Energy losses Collector Current 900V 125°C Eoff J=125°C (mJ) TJ=125°C Switching Energy Losses Gate Resistance (mJ) Gate Resistance (ohms) 900V =15V 150A 125°C Reverse Bias Safe Operating Area 1200 1600 2000 GE=15V J=125°C RG=4.7 Eoff maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.16 Thermal Impedance (°C/W) 0.14 0.12 0.08 0.06 0.04 0.02 0.05 0.0001 0.001 Single Pulse 0.01 IGBT 0.00001 rectangular Pulse Duration (Seconds) www.microsemi.com APTGT150DA170G July, 2006 APTGT150DA170G Operating Frequency Collector Current Fmax, Operating Frequency (kHz) =900V D=50% RG=4.7 J=125°C C=75°C Forward Characteristic diode J=25°C TJ=125°C hard switching =125°C maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) Diode 0.25 0.15 0.05 0.05 0.0001 Single Pulse 0.001 0.01 0.00001 rectangular Pulse Duration (Seconds) Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved. www.microsemi.com APTGT150DA170G Microsemi reserves right change, without notice, specifications information contained herein July, 2006 Other recent searchesSTR710 - STR710 STR710 Datasheet KST63 - KST63 KST63 Datasheet IDT7MPV4160 - IDT7MPV4160 IDT7MPV4160 Datasheet IDT7MPV4161 - IDT7MPV4161 IDT7MPV4161 Datasheet IDT7MPV4162 - IDT7MPV4162 IDT7MPV4162 Datasheet IDT7MPV4162A - IDT7MPV4162A IDT7MPV4162A Datasheet IDT7MPV4163 - IDT7MPV4163 IDT7MPV4163 Datasheet CXA3309ER - CXA3309ER CXA3309ER Datasheet 74AC32 - 74AC32 74AC32 Datasheet 74ACT32 - 74ACT32 74ACT32 Datasheet 1N277 - 1N277 1N277 Datasheet
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