Boost chopper Fast Trench Field Stop IGBT® Power Module VBUS

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Boost chopper Fast Trench Field Stop IGBT® Power Module VBUS

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APTGT150DA120G
Boost chopper Fast Trench Field Stop IGBT® Power Module
VBUS
VCES 1200V 150A 80°C
Application motor control Switched Mode Power Supplies Power Factor Correction Features Fast Trench Field Stop IGBT® Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current Avalanche energy rated RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance Symmetrical design power connectors High level integration Benefits Stable temperature behavior Very rugged Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat profile RoHS Compliant
0/VBUS
VBUS
0/VBUS
Absolute maximum ratings
Symbol VCES RBSOA
Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation 25°C 80°C 25°C 25°C 125°C
ratings 1200 300A 1150V
Unit
July, 2006 APTGT150DA120G
Reverse Bias Safe Operating Area
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com
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APTGT150DA120G
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 1200V 25°C 150A 125°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions 1MHz Inductive Switching (25°C) ±15V VBus 600V 150A Inductive Switching (125°C) ±15V VBus 600V 150A ±15V 125°C VBus 600V 150A 125°C
10.7 0.56 0.48
Unit
Chopper diode ratings characteristics
Symbol Characteristic VRRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions 25°C 125°C 80°C 25°C 125°C 25°C 125°C 25°C 125°C 25°C 125°C
1200
Unit
Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1200V
150A
APTGT150DA120G July, 2006
150A 600V
di/dt =2500A/µs
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APTGT150DA120G
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque
IGBT Diode 2500
Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight heatsink terminals
0.18 0.30
Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
Package outline (dimensions
application note APT0601 Mounting Instructions Power Modules www.microsemi.com
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APTGT150DA120G
July, 2006
APTGT150DA120G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 125°C
J=25°C
TJ=125°C
=17V
GE=13V =15V GE=9V
Transfert Characteristics
J=25°C J=125°C
Energy losses Collector Current (mJ) Reverse Bias Safe Operating Area
Eoff 600V 125°C
Eoff
J=125°C
Switching Energy Losses Gate Resistance (mJ) Gate Resistance (ohms)
600V =15V 150A 125°C
1200 1600
GE=15V J=125°C RG=2.2
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) 0.16 0.12 0.08 0.04 Single Pulse 0.0001 0.001 0.01 IGBT
0.05 0.00001
rectangular Pulse Duration (Seconds)
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APTGT150DA120G
July, 2006
APTGT150DA120G
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
Hard switching =600V D=50% RG=2.2 J=125°C c=75°C
Forward Characteristic diode
=125°C J=125°C J=25°C
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.35 Thermal Impedance (°C/W) 0.25 0.15 0.05 0.05 0.0001 0.001 Single Pulse 0.01
Diode
0.00001
rectangular Pulse Duration (Seconds)
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
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APTGT150DA120G
Microsemi reserves right change, without notice, specifications information contained herein
July, 2006

Boost chopper Fast Trench Field Stop IGBT® Power Module VBUS

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