VBUS VCES 600V 150A 80°C Application Welding converters Swit

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VBUS VCES 600V 150A 80°C Application Welding converters Swit

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APTGT150A60TG
VBUS
VCES 600V 150A 80°C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench Field Stop IGBT® Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current Avalanche energy rated RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance Symmetrical design Lead frames power connections High level integration Internal thermistor temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals easy mounting Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat profile RoHS Compliant ratings 300A 550V Unit
June, 2006 APTGT150A60TG
0/VBUS
VBUS
0/VBUS
NTC2 NTC1
Absolute maximum ratings
Symbol VCES RBSOA
Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation 25°C 80°C 25°C 25°C 150°C
Reverse Bias Safe Operating Area
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com
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APTGT150A60TG
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 600V 25°C =15V 150A 150°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Energy Turn Energy
Test Conditions 1MHz Inductive Switching (25°C) ±15V VBus 300V 150A Inductive Switching (150°C) ±15V VBus 300V 150A ±15V VBus 300V 150A 25°C 150°C 25°C 150°C
9200 0.85
Unit
Reverse diode ratings characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
Test Conditions VR=600V 150A 25°C 150°C 80°C 25°C 150°C 25°C 150°C 25°C 150°C 25°C 150°C
Unit
di/dt =3000A/µs
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APTGT150A60TG
June, 2006
150A 300V
14.5
APTGT150A60TG
Temperature sensor (see application note APT0406 www.microsemi.com more information).
Symbol Characteristic Resistance 25°C 25/85 298.15 3952 Unit
Thermistor value
Thermistor temperature
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
0.31 0.52
Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
Heatsink
2500
Package outline (dimensions
DIMENSIONS MARKED TOLERENCED
application note APT0501 Mounting Instructions Power Modules www.microsemi.com
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APTGT150A60TG
June, 2006
APTGT150A60TG
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics
150°C E=19V
TJ=25°C
TJ=125°C
=150°C
TJ=25°C
VGE=13V VGE=15V
VGE=9V
Transfert Characteristics
J=25°C
Energy losses Collector Current
300V 150°C Eoff
(mJ)
TJ=125°C TJ=150°C TJ=25°C
Reverse Bias Safe Operating Area
Eoff Eoff
Switching Energy Losses Gate Resistance (mJ)
300V =15V 150A 150°C
VGE=15V TJ=150°C =3.3
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.35 Thermal Impedance (°C/W) 0.25 0.15 0.05
IGBT
Single Pulse 0.0001 0.001 0.01
Rectangular Pulse Duration Seconds
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APTGT150A60TG
0.05 0.00001
June, 2006
APTGT150A60TG
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
Hard switching VCE=300V D=50% RG=3.3 J=150°C
Forward Characteristic diode
J=25°C J=125°C J=150°C
c=85°C
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) Single Pulse 0.0001 0.001 0.01
Diode
0.05 0.00001
Rectangular Pulse Duration Seconds
Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
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APTGT150A60TG
June, 2006

VBUS VCES 600V 150A 80°C Application Welding converters Swit

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