VBUS NTC2 VCES 1200V 150A 80°C Application Welding converter

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VBUS NTC2 VCES 1200V 150A 80°C Application Welding converter

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APTGT150A120TG
VBUS NTC2
VCES 1200V 150A 80°C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Fast Trench Field Stop IGBT® Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current Avalanche energy rated RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance Symmetrical design Lead frames power connections High level integration Internal thermistor temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals easy mounting Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat profile RoHS Compliant
0/VBU
NTC1
VBUS
0/VBUS
NTC2 NTC1
Absolute maximum ratings
Symbol VCES RBSOA
Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation 25°C 80°C 25°C 25°C 125°C
ratings 1200 300A 1150V
Unit
July, 2006 APTGT150A120TG
Reverse Bias Safe Operating Area
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com
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APTGT150A120TG
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 1200V 25°C 150A 125°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions 1MHz Inductive Switching (25°C) ±15V VBus 600V 150A Inductive Switching (125°C) ±15V VBus 600V 150A ±15V 125°C VBus 600V 150A 125°C
10.7 0.56 0.48
Unit
Reverse diode ratings characteristics
Symbol Characteristic VRRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions 25°C 125°C 80°C 25°C 125°C 25°C 125°C 25°C 125°C 25°C 125°C
1200
Unit
Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1200V
150A
July, 2006 APTGT150A120TG
150A 600V
di/dt =3000A/µs
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APTGT150A120TG
Temperature sensor (see application note APT0406 www.microsemi.com more information).
Symbol Characteristic Resistance 25°C 25/85 298.15 3952 Unit
Thermistor value
Thermistor temperature
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
0.18 0.34
Unit
°C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
Heatsink
2500
Package outline (dimensions
DIMENSIO MARKED OLERENCED
application note APT0501 Mounting Instructions Power Modules www.microsemi.com
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APTGT150A120TG
July, 2006
APTGT150A120TG
Typical Performance Curve
Output Characteristics GE=15V) Output Characteristics
=125°C 125°C VGE=17V VGE=13V VGE=15V VGE=9V
TJ=25°C
Transfert Characteristics
Energy losses Collector Current
600V 125°C Eoff
J=25°C
(mJ)
TJ=125°C
TJ=125°C
Switching Energy Losses Gate Resistance (mJ) Gate Resistance (ohms)
600V =15V 150A 125°C
Reverse Bias Safe Operating Area 1200 1600
GE=15V J=125°C RG=2.2
Eoff
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) 0.16 0.12 0.08 0.04 0.05 0.0001 0.001 0.01 Single Pulse
IGBT
0.00001
rectangular Pulse Duration (Seconds)
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APTGT150A120TG
July, 2006
APTGT150A120TG
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
Hard Switching VCE=600V D=50% RG=2.2 =125°C TC=75°C
Forward Characteristic diode
=125°C TJ=25°C TJ=125°C
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.35 Thermal Impedance (°C/W) 0.25 0.15 0.05 0.05 0.0001 0.001 Single Pulse
Diode
0.00001
0.01
rectangular Pulse Duration (Seconds)
Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
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APTGT150A120TG
July, 2006

VBUS NTC2 VCES 1200V 150A 80°C Application Welding converter

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